Isotropic etching of deep trenches in silicon (1996)
Source: Proceedings. Conference titles: Conference on the Brazilian Microelectronics Society. Unidade: EP
Assunto: SEMICONDUTORES
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, H. S. Isotropic etching of deep trenches in silicon. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 14 nov. 2024.APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1996). Isotropic etching of deep trenches in silicon. In Proceedings. São Paulo: Sbmicro.NLM
Mansano RD, Verdonck PB, Maciel HS. Isotropic etching of deep trenches in silicon. Proceedings. 1996 ;[citado 2024 nov. 14 ]Vancouver
Mansano RD, Verdonck PB, Maciel HS. Isotropic etching of deep trenches in silicon. Proceedings. 1996 ;[citado 2024 nov. 14 ]