Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors (1995)
- Authors:
- Autor USP: MORIMOTO, NILTON ITIRO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: Instituto de Informatica da Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título do periódico: Proceedings
- Conference titles: Congress of the Brazilian Microelectronics Society
-
ABNT
SALAUN, A C; FORTIN, B; BONNAUD, O; et al. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. -
APA
Salaun, A. C., Fortin, B., Bonnaud, O., Morimoto, N. I., Kis-Sion, K., Lhermite, H., & Le Bihan, F. (1995). Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs. -
NLM
Salaun AC, Fortin B, Bonnaud O, Morimoto NI, Kis-Sion K, Lhermite H, Le Bihan F. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. Proceedings. 1995 ; -
Vancouver
Salaun AC, Fortin B, Bonnaud O, Morimoto NI, Kis-Sion K, Lhermite H, Le Bihan F. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. Proceedings. 1995 ; - Study of nickel silicide as mask for alkaline solutions to V-grooves fabrication
- Caracterização de filmes finos de siliceto de titanio por técnicas de difração de Raio X
- Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices applications. (em CD-Rom)
- Mach-zehnder interferometer simulation results for integrated optical pressure sensor
- Caracterizacao de oxido de silicio nao dopado depositados por pecvd
- Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques
- Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures
- Desenvolvimento de um sistema multicâmara integrado para deposição e recozimento de filmes 'SI''O IND.2'
- SIPOS thin films deposition process for power devices passivation
- The influence of process parameters on the electrical bahavior of silicon oxide thin films deposited by PECVD-TEOS
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
