Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors (1995)
- Autores:
- Autor USP: MORIMOTO, NILTON ITIRO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Idioma: Inglês
- Imprenta:
- Editora: Instituto de Informatica da Ufrgs
- Local: Porto Alegre
- Data de publicação: 1995
- Fonte:
- Título do periódico: Proceedings
- Nome do evento: Congress of the Brazilian Microelectronics Society
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ABNT
SALAUN, A C et al. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 26 abr. 2024. -
APA
Salaun, A. C., Fortin, B., Bonnaud, O., Morimoto, N. I., Kis-Sion, K., Lhermite, H., & Le Bihan, F. (1995). Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs. -
NLM
Salaun AC, Fortin B, Bonnaud O, Morimoto NI, Kis-Sion K, Lhermite H, Le Bihan F. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. Proceedings. 1995 ;[citado 2024 abr. 26 ] -
Vancouver
Salaun AC, Fortin B, Bonnaud O, Morimoto NI, Kis-Sion K, Lhermite H, Le Bihan F. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. Proceedings. 1995 ;[citado 2024 abr. 26 ] - Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices applications. (em CD-Rom)
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