Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) and its analysis: application to power diode passivation (2001)
- Authors:
- Autor USP: MORIMOTO, NILTON ITIRO - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Conference titles: International Conference on Polycrystalline Semiconductors
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ABNT
FERREIRA, Eduardo dos Santos e MORIMOTO, Nilton Itiro. Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) and its analysis: application to power diode passivation. Polycristalline Semiconductors VI - Materials, Technologies, and Large Area Electronics. Tradução . Zuerich: Scitec, 2001. . . Acesso em: 27 set. 2024. -
APA
Ferreira, E. dos S., & Morimoto, N. I. (2001). Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) and its analysis: application to power diode passivation. In Polycristalline Semiconductors VI - Materials, Technologies, and Large Area Electronics. Zuerich: Scitec. -
NLM
Ferreira E dos S, Morimoto NI. Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) and its analysis: application to power diode passivation. In: Polycristalline Semiconductors VI - Materials, Technologies, and Large Area Electronics. Zuerich: Scitec; 2001. [citado 2024 set. 27 ] -
Vancouver
Ferreira E dos S, Morimoto NI. Low-pressure chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) and its analysis: application to power diode passivation. In: Polycristalline Semiconductors VI - Materials, Technologies, and Large Area Electronics. Zuerich: Scitec; 2001. [citado 2024 set. 27 ] - Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices applications. (em CD-Rom)
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