Lattice heating and energy balance consideration on the i-v characteristics of submicrometer thin-film fully depleted soi nmos devices (1996)
- Authors:
- USP affiliated authors: BRAGA, NELSON LIEBENTRITT DE ALMEIDA - EP ; ZASNICOFF, LUIZ SERGIO - EP ; BRUNETTI, CLÁUDIA - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Proceedings
- Conference titles: Conference of the Brazilian Microelectronics Society
-
ABNT
BRUNETTI, Cláudia e BRAGA, Nelson Liebentritt de Almeida e ZASNICOFF, Luiz Sergio. Lattice heating and energy balance consideration on the i-v characteristics of submicrometer thin-film fully depleted soi nmos devices. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 24 jan. 2026. -
APA
Brunetti, C., Braga, N. L. de A., & Zasnicoff, L. S. (1996). Lattice heating and energy balance consideration on the i-v characteristics of submicrometer thin-film fully depleted soi nmos devices. In Proceedings. São Paulo: Sbmicro. -
NLM
Brunetti C, Braga NL de A, Zasnicoff LS. Lattice heating and energy balance consideration on the i-v characteristics of submicrometer thin-film fully depleted soi nmos devices. Proceedings. 1996 ;[citado 2026 jan. 24 ] -
Vancouver
Brunetti C, Braga NL de A, Zasnicoff LS. Lattice heating and energy balance consideration on the i-v characteristics of submicrometer thin-film fully depleted soi nmos devices. Proceedings. 1996 ;[citado 2026 jan. 24 ] - Lattice heating and energy balance consideration on the I-V characteristics of submicrometer thin-film fully depleted SOI NMOS devices
- Simulated and measured I-V characteristics of FD SOI-NMOS transistors modified by the self-heating effect. (em CD-Rom)
- Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge)
- Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures
- Influência do auto-aquecimento na característica IxV de transístores MOS/SOI
- Estruturas para verificacao de regras de projeto em tecnologia CMOS
- Near-exact two-dimensional mathematical model for pipe diffusion along dislocations
- Enchanced diffusion of arsenic along misfit dislocation in epitaxial 'SI' / 'SI' (Ge )
- Dopant pipe diffusion along misfit dislocations in epitaxial 'SI' / 'SI' (Ge)
- Estudo teórico-experimental do efeito tiristor parasitário (Latch-up) em estruturas CMOS
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