Simulated and measured I-V characteristics of FD SOI-NMOS transistors modified by the self-heating effect. (em CD-Rom) (1997)
- Authors:
- USP affiliated authors: BRAGA, NELSON LIEBENTRITT DE ALMEIDA - EP ; ZASNICOFF, LUIZ SERGIO - EP
- Unidade: EP
- Subjects: CIRCUITOS INTEGRADOS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: SBMICRO/EFEI
- Publisher place: Itajubá
- Date published: 1997
- Source:
- Título: Proceedings
- Conference titles: Conference of the Brazilian Microelectronics Society
-
ABNT
BRUNETTI, Cláudia e BRAGA, Nelson Liebentritt de Almeida e ZASNICOFF, Luiz Sergio. Simulated and measured I-V characteristics of FD SOI-NMOS transistors modified by the self-heating effect. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 23 jan. 2026. -
APA
Brunetti, C., Braga, N. L. de A., & Zasnicoff, L. S. (1997). Simulated and measured I-V characteristics of FD SOI-NMOS transistors modified by the self-heating effect. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI. -
NLM
Brunetti C, Braga NL de A, Zasnicoff LS. Simulated and measured I-V characteristics of FD SOI-NMOS transistors modified by the self-heating effect. (em CD-Rom). Proceedings. 1997 ;[citado 2026 jan. 23 ] -
Vancouver
Brunetti C, Braga NL de A, Zasnicoff LS. Simulated and measured I-V characteristics of FD SOI-NMOS transistors modified by the self-heating effect. (em CD-Rom). Proceedings. 1997 ;[citado 2026 jan. 23 ] - Lattice heating and energy balance consideration on the I-V characteristics of submicrometer thin-film fully depleted SOI NMOS devices
- Quantitative analysis of 'AS' and 'SB' pipe diffusion along misfit dislocation in epitaxial 'SI' / 'SI' (ge)
- Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures
- Lattice heating and energy balance consideration on the i-v characteristics of submicrometer thin-film fully depleted soi nmos devices
- Estruturas para verificacao de regras de projeto em tecnologia CMOS
- Near-exact two-dimensional mathematical model for pipe diffusion along dislocations
- Enchanced diffusion of arsenic along misfit dislocation in epitaxial 'SI' / 'SI' (Ge )
- Dopant pipe diffusion along misfit dislocations in epitaxial 'SI' / 'SI' (Ge)
- Estudo teórico-experimental do efeito tiristor parasitário (Latch-up) em estruturas CMOS
- Analysis of process parameters in "Smart cut" SOI structure fabrication
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