Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures (1996)
- Authors:
- USP affiliated authors: BRAGA, NELSON LIEBENTRITT DE ALMEIDA - EP ; ZASNICOFF, LUIZ SERGIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Solid-State Devices and Circuits
- Volume/Número/Paginação/Ano: v.4 , n.1 , p.1-6, jan. 1996
-
ABNT
BRAGA, Nelson Liebentritt de Almeida e ZASNICOFF, Luiz Sergio. Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits, v. 4 , n. ja 1996, p. 1-6, 1996Tradução . . Acesso em: 24 jan. 2026. -
APA
Braga, N. L. de A., & Zasnicoff, L. S. (1996). Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits, 4 ( ja 1996), 1-6. -
NLM
Braga NL de A, Zasnicoff LS. Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 1-6.[citado 2026 jan. 24 ] -
Vancouver
Braga NL de A, Zasnicoff LS. Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 1-6.[citado 2026 jan. 24 ] - Lattice heating and energy balance consideration on the I-V characteristics of submicrometer thin-film fully depleted SOI NMOS devices
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