Plating mechanisms of cooper onto silicon surfaces diluted hydrofluoric solutions (1995)
- Authors:
- USP affiliated authors: SANTOS FILHO, SEBASTIAO GOMES DOS - EP ; HASENACK, CLAUS MARTIN - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: Instituto de Informatica da Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título do periódico: Proceedings
- Conference titles: Congress of the Brazilian Microelectronics Society
-
ABNT
SANTOS FILHO, Sebastião Gomes dos; HASENACK, Claus Martin. Plating mechanisms of cooper onto silicon surfaces diluted hydrofluoric solutions. Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. -
APA
Santos Filho, S. G. dos, & Hasenack, C. M. (1995). Plating mechanisms of cooper onto silicon surfaces diluted hydrofluoric solutions. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs. -
NLM
Santos Filho SG dos, Hasenack CM. Plating mechanisms of cooper onto silicon surfaces diluted hydrofluoric solutions. Proceedings. 1995 ; -
Vancouver
Santos Filho SG dos, Hasenack CM. Plating mechanisms of cooper onto silicon surfaces diluted hydrofluoric solutions. Proceedings. 1995 ; - Cleaning of silicon wafers with hot isopropyl, alcohol, and destilled water as final steps
- Effect of the temperature cooling rate on the 'SI' / 'SI''O IND.2' interface roughness after rapid thermal oxidation
- Processo de limpeza para laminas de silicio
- Construcao e caracterizacao inicial de um medidor de rugosidade quimica de superficies de silicio empregando espalhamento espectral de luz
- Estudo da quantificação da rugosidade da interface Si-SiO2. (em CD-Rom)
- Obtencao de camadas ultrafinas de oxido de silicio por oxidacao termica rapida
- Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings
- Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom)
- Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps
- Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon
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