Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom) (1997)
- Authors:
- USP affiliated authors: SANTOS FILHO, SEBASTIAO GOMES DOS - EP ; HASENACK, CLAUS MARTIN - EP
- Unidade: EP
- Subjects: CIRCUITOS INTEGRADOS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: SBMICRO/EFEI
- Publisher place: Itajubá
- Date published: 1997
- Source:
- Título: Proceedings
- Conference titles: Conference of the Brazilian Microelectronics Society
-
ABNT
SANTOS FILHO, Sebastião Gomes dos e HASENACK, Claus Martin. Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 10 jan. 2026. -
APA
Santos Filho, S. G. dos, & Hasenack, C. M. (1997). Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI. -
NLM
Santos Filho SG dos, Hasenack CM. Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom). Proceedings. 1997 ;[citado 2026 jan. 10 ] -
Vancouver
Santos Filho SG dos, Hasenack CM. Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom). Proceedings. 1997 ;[citado 2026 jan. 10 ] - Plating mechanisms of cooper onto silicon surfaces diluted hydrofluoric solutions
- Construcao e caracterizacao inicial de um medidor de rugosidade quimica de superficies de silicio empregando espalhamento espectral de luz
- Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics
- Estudo da quantificação da rugosidade da interface Si-SiO2. (em CD-Rom)
- Effect of the temperature cooling rate on the 'SI' / 'SI''O IND.2' interface roughness after rapid thermal oxidation
- Medida da rugosidade superficial por espalhamento de luz de laminas de silicio apos diferentes processos de oxidacao termica
- Medida da rugosidade superficial de laminas de silicio empregando a tecnica de espalhamento elastico de luz laser hene
- Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon
- Deposition and renoval of surface contaminants from silicon wafers by means of a diluted hp dip followed or not by a isopropyl alcohol boil
- Cleaning of silicon wafers with hot isopropyl, alcohol, and destilled water as final steps
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