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Artigo de periodico
Aluminum functionalized few-layer silicene as anode material for alkali metal ion batteries (2022)
Ipaves, Bruno ; Justo Filho, João Francisco ; Assali, Lucy Vitoria Credidio
Source: Molecular Systems Design & Engineering. Unidades: IF, EP
Subjects: MATERIAIS, MATERIAIS NANOESTRUTURADOS, ÍONS, METAIS ALCALINOS
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ABNT
IPAVES, Bruno e JUSTO FILHO, João Francisco e ASSALI, Lucy Vitoria Credidio. Aluminum functionalized few-layer silicene as anode material for alkali metal ion batteries. Molecular Systems Design & Engineering, v. No 2022, n. 3, p. 379-387, 2022Tradução . . Disponível em: https://doi.org/10.1039/D2ME00172A. Acesso em: 17 nov. 2024.
APA
Ipaves, B., Justo Filho, J. F., & Assali, L. V. C. (2022). Aluminum functionalized few-layer silicene as anode material for alkali metal ion batteries. Molecular Systems Design & Engineering, No 2022(3), 379-387. doi:10.1039/D2ME00172A
NLM
Ipaves B, Justo Filho JF, Assali LVC. Aluminum functionalized few-layer silicene as anode material for alkali metal ion batteries [Internet]. Molecular Systems Design & Engineering. 2022 ; No 2022(3):379-387.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1039/D2ME00172A
Vancouver
Ipaves B, Justo Filho JF, Assali LVC. Aluminum functionalized few-layer silicene as anode material for alkali metal ion batteries [Internet]. Molecular Systems Design & Engineering. 2022 ; No 2022(3):379-387.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1039/D2ME00172A
Artigo de periodico
Onchip digital calibrated 2 mW 12-bit 25 MS/s SAR ADC with reduced input capacitance (2022)
Hernandez Herrera, H. D.; Bregant, Marco ; Sanches, Bruno Cavalcante de Souza ; Van Noije, Wilhelmus Adrianus Maria
Source: Journal of Instrumentation (JINST). Unidades: IF, EP
Subjects: FÍSICA DE PARTÍCULAS, INSTRUMENTAÇÃO (FÍSICA), CIRCUITOS ELETRÔNICOS ANALÓGICOS, CIRCUITOS INTEGRADOS VLSI
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HERNANDEZ HERRERA, H. D. et al. Onchip digital calibrated 2 mW 12-bit 25 MS/s SAR ADC with reduced input capacitance. Journal of Instrumentation (JINST), v. 17, n. 4, 2022Tradução . . Disponível em: https://doi.org/10.1088/1748-0221/17/04/C04013. Acesso em: 17 nov. 2024.
APA
Hernandez Herrera, H. D., Bregant, M., Sanches, B. C. de S., & Van Noije, W. A. M. (2022). Onchip digital calibrated 2 mW 12-bit 25 MS/s SAR ADC with reduced input capacitance. Journal of Instrumentation (JINST), 17( 4). doi:10.1088/1748-0221/17/04/C04013
NLM
Hernandez Herrera HD, Bregant M, Sanches BC de S, Van Noije WAM. Onchip digital calibrated 2 mW 12-bit 25 MS/s SAR ADC with reduced input capacitance [Internet]. Journal of Instrumentation (JINST). 2022 ; 17( 4):[citado 2024 nov. 17 ] Available from: https://doi.org/10.1088/1748-0221/17/04/C04013
Vancouver
Hernandez Herrera HD, Bregant M, Sanches BC de S, Van Noije WAM. Onchip digital calibrated 2 mW 12-bit 25 MS/s SAR ADC with reduced input capacitance [Internet]. Journal of Instrumentation (JINST). 2022 ; 17( 4):[citado 2024 nov. 17 ] Available from: https://doi.org/10.1088/1748-0221/17/04/C04013
Artigo de periodico
Applied methodology for temperature numerical evaluation on high current leads in power transformers (2021)
Melo, André S. de; Calil, Wílerson Venceslau; Salazar, Pablo D. Paz; Siboni, Luisa H.B.; Costa, Eduardo C.M.; Flauzino, Rogério Andrade
Source: International Journal of Electrical Power & Energy Systems. Unidades: EESC, EP
Subjects: TRANSFORMADORES E REATORES, TEMPERATURA
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MELO, André S. de et al. Applied methodology for temperature numerical evaluation on high current leads in power transformers. International Journal of Electrical Power & Energy Systems, v. 131, 2021Tradução . . Disponível em: http://dx.doi.org/10.1016/j.ijepes.2021.107014. Acesso em: 17 nov. 2024.
APA
Melo, A. S. de, Calil, W. V., Salazar, P. D. P., Siboni, L. H. B., Costa, E. C. M., & Flauzino, R. A. (2021). Applied methodology for temperature numerical evaluation on high current leads in power transformers. International Journal of Electrical Power & Energy Systems, 131. doi:10.1016/j.ijepes.2021.107014
NLM
Melo AS de, Calil WV, Salazar PDP, Siboni LHB, Costa ECM, Flauzino RA. Applied methodology for temperature numerical evaluation on high current leads in power transformers [Internet]. International Journal of Electrical Power & Energy Systems. 2021 ; 131[citado 2024 nov. 17 ] Available from: http://dx.doi.org/10.1016/j.ijepes.2021.107014
Vancouver
Melo AS de, Calil WV, Salazar PDP, Siboni LHB, Costa ECM, Flauzino RA. Applied methodology for temperature numerical evaluation on high current leads in power transformers [Internet]. International Journal of Electrical Power & Energy Systems. 2021 ; 131[citado 2024 nov. 17 ] Available from: http://dx.doi.org/10.1016/j.ijepes.2021.107014
Artigo de periodico
Open-circuit voltages: theoretical and experimental optimizations of rear passivated silicon solar cells using Fz and Cz wafers (2010)
Stem, Nair; Ramos, Carlos Alberto Santos; Sánchez, Manuel Cid
Source: Solid-State Electronics. Unidade: EP
Subjects: CIRCUITOS ELÉTRICOS, CÉLULAS SOLARES
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ABNT
STEM, Nair e RAMOS, Carlos Alberto Santos e SÁNCHEZ, Manuel Cid. Open-circuit voltages: theoretical and experimental optimizations of rear passivated silicon solar cells using Fz and Cz wafers. Solid-State Electronics, v. 54, n. 3, p. 221-225, 2010Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2009.09.002. Acesso em: 17 nov. 2024.
APA
Stem, N., Ramos, C. A. S., & Sánchez, M. C. (2010). Open-circuit voltages: theoretical and experimental optimizations of rear passivated silicon solar cells using Fz and Cz wafers. Solid-State Electronics, 54( 3), 221-225. doi:10.1016/j.sse.2009.09.002
NLM
Stem N, Ramos CAS, Sánchez MC. Open-circuit voltages: theoretical and experimental optimizations of rear passivated silicon solar cells using Fz and Cz wafers [Internet]. Solid-State Electronics. 2010 ; 54( 3): 221-225.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.sse.2009.09.002
Vancouver
Stem N, Ramos CAS, Sánchez MC. Open-circuit voltages: theoretical and experimental optimizations of rear passivated silicon solar cells using Fz and Cz wafers [Internet]. Solid-State Electronics. 2010 ; 54( 3): 221-225.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.sse.2009.09.002
Artigo de periodico
Rotation-discriminating template matching based on Fourier coefficients of radial projections with robustness to scaling and partial occlusion (2010)
Hae, Yong Kim
Source: Pattern Recognition. Unidade: EP
Assunto: RECONHECIMENTO DE PADRÕES
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ABNT
HAE, Yong Kim. Rotation-discriminating template matching based on Fourier coefficients of radial projections with robustness to scaling and partial occlusion. Pattern Recognition, v. 43, n. 3, p. 859-872, 2010Tradução . . Disponível em: https://doi.org/10.1016/j.patcog.2009.08.005. Acesso em: 17 nov. 2024.
APA
Hae, Y. K. (2010). Rotation-discriminating template matching based on Fourier coefficients of radial projections with robustness to scaling and partial occlusion. Pattern Recognition, 43( 3), 859-872. doi:10.1016/j.patcog.2009.08.005
NLM
Hae YK. Rotation-discriminating template matching based on Fourier coefficients of radial projections with robustness to scaling and partial occlusion [Internet]. Pattern Recognition. 2010 ; 43( 3): 859-872.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.patcog.2009.08.005
Vancouver
Hae YK. Rotation-discriminating template matching based on Fourier coefficients of radial projections with robustness to scaling and partial occlusion [Internet]. Pattern Recognition. 2010 ; 43( 3): 859-872.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.patcog.2009.08.005
Artigo de periodico
Applying semantics to grid middleware (2009)
Vidal, A. C. T.; Silva, F. J. S.; Kofuji, Sergio Takeo ; Kon, Fábio
Source: Concurency and Computation: practice and experience. Unidades: EP, IME
Assunto: TEORIA DA COMPUTAÇÃO
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ABNT
VIDAL, A. C. T. et al. Applying semantics to grid middleware. Concurency and Computation: practice and experience, v. 21, n. 13, p. 1725-1741, 2009Tradução . . Disponível em: https://doi.org/10.1002/cpe.1395. Acesso em: 17 nov. 2024.
APA
Vidal, A. C. T., Silva, F. J. S., Kofuji, S. T., & Kon, F. (2009). Applying semantics to grid middleware. Concurency and Computation: practice and experience, 21( 13), 1725-1741. doi:10.1002/cpe.1395
NLM
Vidal ACT, Silva FJS, Kofuji ST, Kon F. Applying semantics to grid middleware [Internet]. Concurency and Computation: practice and experience. 2009 ; 21( 13): 1725-1741.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1002/cpe.1395
Vancouver
Vidal ACT, Silva FJS, Kofuji ST, Kon F. Applying semantics to grid middleware [Internet]. Concurency and Computation: practice and experience. 2009 ; 21( 13): 1725-1741.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1002/cpe.1395
Artigo de periodico
Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study (2008)
Boscariol, Michelle Rigamonti; Moreira, Adir José; Mansano, Ronaldo Domingues ; Kikuchi, Irene Satiko ; Pinto, Terezinha de Jesus Andreoli
Source: International Journal of Food Science and Technology. Unidades: EP, FCF
Subjects: PLASMA, OXIGÊNIO, MICROBIOLOGIA
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ABNT
BOSCARIOL, Michelle Rigamonti et al. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology, v. 43, n. 5, p. 170-175, 2008Tradução . . Acesso em: 17 nov. 2024.
APA
Boscariol, M. R., Moreira, A. J., Mansano, R. D., Kikuchi, I. S., & Pinto, T. de J. A. (2008). Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology, 43( 5), 170-175.
NLM
Boscariol MR, Moreira AJ, Mansano RD, Kikuchi IS, Pinto T de JA. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology. 2008 ;43( 5): 170-175.[citado 2024 nov. 17 ]
Vancouver
Boscariol MR, Moreira AJ, Mansano RD, Kikuchi IS, Pinto T de JA. Sterilization by pure oxygen plasma and by oxygen-hydrogen peroxide plasma: an efficacy study. International Journal of Food Science and Technology. 2008 ;43( 5): 170-175.[citado 2024 nov. 17 ]
Artigo de periodico
Electrical studies on the doping dependence and electrode effect of metal-PANI-metal structures (2005)
Bianchi, Rodrigo Fernando; Cunha, Helder Nunes da; Faria, Roberto Mendonça ; Leal Ferreira, Guilherme Fontes; Guimarães Neto, João Mariz
Source: Journal of Physics D. Unidades: EP, IFSC
Subjects: POLÍMEROS (MATERIAIS), ALUMÍNIO, MATERIAIS COMPÓSITOS
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BIANCHI, Rodrigo Fernando et al. Electrical studies on the doping dependence and electrode effect of metal-PANI-metal structures. Journal of Physics D, v. 38, n. 9, p. 1437-1443, 2005Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/38/9/017. Acesso em: 17 nov. 2024.
APA
Bianchi, R. F., Cunha, H. N. da, Faria, R. M., Leal Ferreira, G. F., & Guimarães Neto, J. M. (2005). Electrical studies on the doping dependence and electrode effect of metal-PANI-metal structures. Journal of Physics D, 38( 9), 1437-1443. doi:10.1088/0022-3727/38/9/017
NLM
Bianchi RF, Cunha HN da, Faria RM, Leal Ferreira GF, Guimarães Neto JM. Electrical studies on the doping dependence and electrode effect of metal-PANI-metal structures [Internet]. Journal of Physics D. 2005 ; 38( 9): 1437-1443.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1088/0022-3727/38/9/017
Vancouver
Bianchi RF, Cunha HN da, Faria RM, Leal Ferreira GF, Guimarães Neto JM. Electrical studies on the doping dependence and electrode effect of metal-PANI-metal structures [Internet]. Journal of Physics D. 2005 ; 38( 9): 1437-1443.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1088/0022-3727/38/9/017
Artigo de periodico
Non-homogenous neural networks with chaotic recursive nodes: connectivity and multi-assemblies structures in recursive processing elements architectures (2005)
Del Moral Hernandez, Emilio
Source: Neural Networks. Unidade: EP
Assunto: REDES NEURAIS
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ABNT
DEL MORAL HERNANDEZ, Emilio. Non-homogenous neural networks with chaotic recursive nodes: connectivity and multi-assemblies structures in recursive processing elements architectures. Neural Networks, v. 18, n. 5-6, p. 532-540, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.neunet.2005.06.035. Acesso em: 17 nov. 2024.
APA
Del Moral Hernandez, E. (2005). Non-homogenous neural networks with chaotic recursive nodes: connectivity and multi-assemblies structures in recursive processing elements architectures. Neural Networks, 18( 5-6), 532-540. doi:10.1016/j.neunet.2005.06.035
NLM
Del Moral Hernandez E. Non-homogenous neural networks with chaotic recursive nodes: connectivity and multi-assemblies structures in recursive processing elements architectures [Internet]. Neural Networks. 2005 ;18( 5-6): 532-540.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.neunet.2005.06.035
Vancouver
Del Moral Hernandez E. Non-homogenous neural networks with chaotic recursive nodes: connectivity and multi-assemblies structures in recursive processing elements architectures [Internet]. Neural Networks. 2005 ;18( 5-6): 532-540.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.neunet.2005.06.035
Artigo de periodico
SOI technology characterization using SOI-MOS capacitor (2005)
Sonnenberg, Victor ; Martino, João Antonio
Source: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. SOI technology characterization using SOI-MOS capacitor. Solid-State Electronics, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2004.06.010. Acesso em: 17 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (2005). SOI technology characterization using SOI-MOS capacitor. Solid-State Electronics. doi:10.1016/j.sse.2004.06.010
NLM
Sonnenberg V, Martino JA. SOI technology characterization using SOI-MOS capacitor [Internet]. Solid-State Electronics. 2005 ;[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.sse.2004.06.010
Vancouver
Sonnenberg V, Martino JA. SOI technology characterization using SOI-MOS capacitor [Internet]. Solid-State Electronics. 2005 ;[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.sse.2004.06.010
Artigo de periodico
Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells (2004)
Stem, Nair; Sánchez, Manuel Cid
Source: Solid-State Electronics. Unidade: EP
Subjects: CIRCUITOS ELÉTRICOS, CÉLULAS SOLARES
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ABNT
STEM, Nair e SÁNCHEZ, Manuel Cid. Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells. Solid-State Electronics, v. fe 2004, n. 2, p. 197-205, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2003.08.005. Acesso em: 17 nov. 2024.
APA
Stem, N., & Sánchez, M. C. (2004). Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells. Solid-State Electronics, fe 2004( 2), 197-205. doi:10.1016/j.sse.2003.08.005
NLM
Stem N, Sánchez MC. Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells [Internet]. Solid-State Electronics. 2004 ; fe 2004( 2): 197-205.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.sse.2003.08.005
Vancouver
Stem N, Sánchez MC. Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells [Internet]. Solid-State Electronics. 2004 ; fe 2004( 2): 197-205.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/j.sse.2003.08.005
Artigo de periodico
Magnetic characterization of microscopic particles by MO-SNOM (2004)
Schoenmaker, Jeroen ; Lancarotte, Marcelo Shiroma ; Seabra, Antonio Carlos ; Souche, Y; Santos, Antonio Domingues dos
Source: Journal of Microscopy. Unidades: IF, EP
Subjects: MAGNETISMO, MICROSCOPIA ELETRÔNICA
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ABNT
SCHOENMAKER, Jeroen et al. Magnetic characterization of microscopic particles by MO-SNOM. Journal of Microscopy, 2004Tradução . . Disponível em: https://doi.org/10.1111/j.0022-2720.2004.01303.x. Acesso em: 17 nov. 2024.
APA
Schoenmaker, J., Lancarotte, M. S., Seabra, A. C., Souche, Y., & Santos, A. D. dos. (2004). Magnetic characterization of microscopic particles by MO-SNOM. Journal of Microscopy. doi:10.1111/j.0022-2720.2004.01303.x
NLM
Schoenmaker J, Lancarotte MS, Seabra AC, Souche Y, Santos AD dos. Magnetic characterization of microscopic particles by MO-SNOM [Internet]. Journal of Microscopy. 2004 ;[citado 2024 nov. 17 ] Available from: https://doi.org/10.1111/j.0022-2720.2004.01303.x
Vancouver
Schoenmaker J, Lancarotte MS, Seabra AC, Souche Y, Santos AD dos. Magnetic characterization of microscopic particles by MO-SNOM [Internet]. Journal of Microscopy. 2004 ;[citado 2024 nov. 17 ] Available from: https://doi.org/10.1111/j.0022-2720.2004.01303.x
Artigo de periodico
Generation and characterization of polymeric tridimensional microstrucutres for micromachine application (2003)
Mousinho, Ana Paula; Mansano, Ronaldo Domingues ; Arruda, Antonio Carlos Santos de
Source: Microelectronics Journal,. Unidade: EP
Assunto: NANOTECNOLOGIA
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ABNT
MOUSINHO, Ana Paula e MANSANO, Ronaldo Domingues e ARRUDA, Antonio Carlos Santos de. Generation and characterization of polymeric tridimensional microstrucutres for micromachine application. Microelectronics Journal, v. 34, n. 5-8, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00085-5. Acesso em: 17 nov. 2024.
APA
Mousinho, A. P., Mansano, R. D., & Arruda, A. C. S. de. (2003). Generation and characterization of polymeric tridimensional microstrucutres for micromachine application. Microelectronics Journal,, 34( 5-8). doi:10.1016/s0026-2692(03)00085-5
NLM
Mousinho AP, Mansano RD, Arruda ACS de. Generation and characterization of polymeric tridimensional microstrucutres for micromachine application [Internet]. Microelectronics Journal,. 2003 ; 34( 5-8):[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0026-2692(03)00085-5
Vancouver
Mousinho AP, Mansano RD, Arruda ACS de. Generation and characterization of polymeric tridimensional microstrucutres for micromachine application [Internet]. Microelectronics Journal,. 2003 ; 34( 5-8):[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0026-2692(03)00085-5
Artigo de periodico
High density plasma chemical vapor deposition of diamond-like carbon films (2003)
Mousinho, Ana Paula; Mansano, Ronaldo Domingues ; Massi, Marcos; Zambom, Luís da Silva
Source: Microelectronics Journal. Unidade: EP
Assunto: PLASMA (MICROELETRÔNICA)
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ABNT
MOUSINHO, Ana Paula et al. High density plasma chemical vapor deposition of diamond-like carbon films. Microelectronics Journal, v. 34, n. 5-8, p. 627-629, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00065-x. Acesso em: 17 nov. 2024.
APA
Mousinho, A. P., Mansano, R. D., Massi, M., & Zambom, L. da S. (2003). High density plasma chemical vapor deposition of diamond-like carbon films. Microelectronics Journal, 34( 5-8), 627-629. doi:10.1016/s0026-2692(03)00065-x
NLM
Mousinho AP, Mansano RD, Massi M, Zambom L da S. High density plasma chemical vapor deposition of diamond-like carbon films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 627-629.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0026-2692(03)00065-x
Vancouver
Mousinho AP, Mansano RD, Massi M, Zambom L da S. High density plasma chemical vapor deposition of diamond-like carbon films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 627-629.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0026-2692(03)00065-x
Artigo de periodico
Neural network with chaotic recursive nodes: techniques for the design of associative memories, contrast with Hopfield architectures, and extensions for time-dependent inputs (2003)
Del Moral Hernandez, Emilio
Source: Neural Networks,. Unidade: EP
Assunto: REDES NEURAIS
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ABNT
DEL MORAL HERNANDEZ, Emilio. Neural network with chaotic recursive nodes: techniques for the design of associative memories, contrast with Hopfield architectures, and extensions for time-dependent inputs. Neural Networks, v. 16, n. 5-6, p. 675-682, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0893-6080(03)00125-4. Acesso em: 17 nov. 2024.
APA
Del Moral Hernandez, E. (2003). Neural network with chaotic recursive nodes: techniques for the design of associative memories, contrast with Hopfield architectures, and extensions for time-dependent inputs. Neural Networks,, 16( 5-6), 675-682. doi:10.1016/s0893-6080(03)00125-4
NLM
Del Moral Hernandez E. Neural network with chaotic recursive nodes: techniques for the design of associative memories, contrast with Hopfield architectures, and extensions for time-dependent inputs [Internet]. Neural Networks,. 2003 ; 16( 5-6): 675-682.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0893-6080(03)00125-4
Vancouver
Del Moral Hernandez E. Neural network with chaotic recursive nodes: techniques for the design of associative memories, contrast with Hopfield architectures, and extensions for time-dependent inputs [Internet]. Neural Networks,. 2003 ; 16( 5-6): 675-682.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0893-6080(03)00125-4
Artigo de periodico
Plasma etching of DLC films for microfluidic channels (2003)
Massi, Marcos; Jaramillo Ocampo, Juan Manuel; Maciel, Homero Santiago; Grigorov, K.; Otani, C.; Santos, L. V.; Mansano, Ronaldo Domingues
Source: Microelectronics Journal,. Unidade: EP
Assunto: PLASMA (MICROELETRÔNICA)
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ABNT
MASSI, Marcos et al. Plasma etching of DLC films for microfluidic channels. Microelectronics Journal, v. 34, n. 5-8, p. 635-638, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00077-6. Acesso em: 17 nov. 2024.
APA
Massi, M., Jaramillo Ocampo, J. M., Maciel, H. S., Grigorov, K., Otani, C., Santos, L. V., & Mansano, R. D. (2003). Plasma etching of DLC films for microfluidic channels. Microelectronics Journal,, 34( 5-8), 635-638. doi:10.1016/s0026-2692(03)00077-6
NLM
Massi M, Jaramillo Ocampo JM, Maciel HS, Grigorov K, Otani C, Santos LV, Mansano RD. Plasma etching of DLC films for microfluidic channels [Internet]. Microelectronics Journal,. 2003 ; 34( 5-8): 635-638.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0026-2692(03)00077-6
Vancouver
Massi M, Jaramillo Ocampo JM, Maciel HS, Grigorov K, Otani C, Santos LV, Mansano RD. Plasma etching of DLC films for microfluidic channels [Internet]. Microelectronics Journal,. 2003 ; 34( 5-8): 635-638.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0026-2692(03)00077-6
Artigo de periodico
Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia (2003)
Zambom, Luís da Silva ; Mansano, Ronaldo Domingues
Source: Vacuum. Unidade: EP
Assunto: PLASMA (MICROELETRÔNICA)
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ABNT
ZAMBOM, Luís da Silva e MANSANO, Ronaldo Domingues. Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia. Vacuum, v. 71, n. 4, p. 439-444, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0042-207x(03)00002-2. Acesso em: 17 nov. 2024.
APA
Zambom, L. da S., & Mansano, R. D. (2003). Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia. Vacuum, 71( 4), 439-444. doi:10.1016/s0042-207x(03)00002-2
NLM
Zambom L da S, Mansano RD. Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia [Internet]. Vacuum. 2003 ; 71( 4): 439-444.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0042-207x(03)00002-2
Vancouver
Zambom L da S, Mansano RD. Silicon nitride deposited by inductively coupled plasma using dichlorosilane and ammonia [Internet]. Vacuum. 2003 ; 71( 4): 439-444.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0042-207x(03)00002-2
Artigo de periodico
The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films (2003)
Guerino, M.; Massi, Marcos; Maciel, Homero Santiago; Otani, C.; Mansano, Ronaldo Domingues
Source: Microelectronics Journal. Unidade: EP
Assunto: PLASMA (MICROELETRÔNICA)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUERINO, M. et al. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films. Microelectronics Journal, v. 34, n. 5-8, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00079-x. Acesso em: 17 nov. 2024.
APA
Guerino, M., Massi, M., Maciel, H. S., Otani, C., & Mansano, R. D. (2003). The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films. Microelectronics Journal, 34( 5-8). doi:10.1016/s0026-2692(03)00079-x
NLM
Guerino M, Massi M, Maciel HS, Otani C, Mansano RD. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8):[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0026-2692(03)00079-x
Vancouver
Guerino M, Massi M, Maciel HS, Otani C, Mansano RD. The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) films [Internet]. Microelectronics Journal. 2003 ; 34( 5-8):[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0026-2692(03)00079-x
Trabalho de evento-resumo
A virtual laboratory to perform electronics experiments by Internet (2002)
Fernandez, Rodrigo Oliveira; Borges, Adriana Paula; Ramírez Fernandez, Francisco Javier
Source: ICEE 2002 : conference abstracts. Conference titles: International Conference on Engineering Education. Unidade: EP
Assunto: ENGENHARIA ELÉTRICA (EDUCAÇÃO)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDEZ, Rodrigo Oliveira e BORGES, Adriana Paula e RAMÍREZ FERNANDEZ, Francisco Javier. A virtual laboratory to perform electronics experiments by Internet. 2002, Anais.. Piscataway: IEEE, 2002. . Acesso em: 17 nov. 2024.
APA
Fernandez, R. O., Borges, A. P., & Ramírez Fernandez, F. J. (2002). A virtual laboratory to perform electronics experiments by Internet. In ICEE 2002 : conference abstracts. Piscataway: IEEE.
NLM
Fernandez RO, Borges AP, Ramírez Fernandez FJ. A virtual laboratory to perform electronics experiments by Internet. ICEE 2002 : conference abstracts. 2002 ;[citado 2024 nov. 17 ]
Vancouver
Fernandez RO, Borges AP, Ramírez Fernandez FJ. A virtual laboratory to perform electronics experiments by Internet. ICEE 2002 : conference abstracts. 2002 ;[citado 2024 nov. 17 ]
Artigo de periodico
Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Assunto: FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Solid-State Electronics, n. 9, p. 1381-1387, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(02)00067-9. Acesso em: 17 nov. 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Solid-State Electronics, ( 9), 1381-1387. doi:10.1016/s0038-1101(02)00067-9
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices [Internet]. Solid-State Electronics. 2002 ;( 9): 1381-1387.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0038-1101(02)00067-9
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices [Internet]. Solid-State Electronics. 2002 ;( 9): 1381-1387.[citado 2024 nov. 17 ] Available from: https://doi.org/10.1016/s0038-1101(02)00067-9

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