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Filtros : "EP-PSI" "Financiamento CNPq" Removido: "ENGENHARIA ELÉTRICA" Limpar

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  • Artigo de periodico

    Study of ISFET for KCl sensing (2024)

    Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Sasaki, Kátia Regina Akemi ; Martino, João Antonio

    Source: Solid State Electronics. Unidade: EP

    Subjects: TRANSISTORES, PERÓXIDO DE HIDROGÊNIO, SENSORES BIOMÉDICOS

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      DUARTE, Pedro Henrique et al. Study of ISFET for KCl sensing. Solid State Electronics, v. 219, p. 1-5, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2024.108974. Acesso em: 06 out. 2024.

    • APA

      Duarte, P. H., Rangel, R. C., Sasaki, K. R. A., & Martino, J. A. (2024). Study of ISFET for KCl sensing. Solid State Electronics, 219, 1-5. doi:10.1016/j.sse.2024.108974

    • NLM

      Duarte PH, Rangel RC, Sasaki KRA, Martino JA. Study of ISFET for KCl sensing [Internet]. Solid State Electronics. 2024 ; 219 1-5.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.sse.2024.108974

    • Vancouver

      Duarte PH, Rangel RC, Sasaki KRA, Martino JA. Study of ISFET for KCl sensing [Internet]. Solid State Electronics. 2024 ; 219 1-5.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.sse.2024.108974

  • Artigo de periodico

    An enzymatic glucose biosensor using the BESOI MOSFET (2024)

    Yojo, Leonardo Shimizu; Rangel, R C; Duarte, Pedro Henrique; Sasaki, Kátia Regina Akemi ; Martino, João Antonio

    Source: Solid State Electronics. Unidade: EP

    Subjects: GLICOSE, DRENAGEM, TRANSISTORES

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      YOJO, Leonardo Shimizu et al. An enzymatic glucose biosensor using the BESOI MOSFET. Solid State Electronics, v. 211, n. Ja 2024, p. 1-6, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108830. Acesso em: 06 out. 2024.

    • APA

      Yojo, L. S., Rangel, R. C., Duarte, P. H., Sasaki, K. R. A., & Martino, J. A. (2024). An enzymatic glucose biosensor using the BESOI MOSFET. Solid State Electronics, 211( Ja 2024), 1-6. doi:10.1016/j.sse.2023.108830

    • NLM

      Yojo LS, Rangel RC, Duarte PH, Sasaki KRA, Martino JA. An enzymatic glucose biosensor using the BESOI MOSFET [Internet]. Solid State Electronics. 2024 ;211( Ja 2024): 1-6.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.sse.2023.108830

    • Vancouver

      Yojo LS, Rangel RC, Duarte PH, Sasaki KRA, Martino JA. An enzymatic glucose biosensor using the BESOI MOSFET [Internet]. Solid State Electronics. 2024 ;211( Ja 2024): 1-6.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.sse.2023.108830

  • Artigo de periodico

    Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping (2024)

    Ipaves, Bruno ; Justo Filho, João Francisco ; Sanyal, Biplab ; Assali, Lucy Vitoria Credidio

    Source: Applied Electronic Materials. Unidades: IF, EP

    Subjects: CARBONO, ESTRUTURA QUÍMICA, CONDUTIVIDADE ELÉTRICA

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      IPAVES, Bruno et al. Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping. Applied Electronic Materials, v. 6, n. 1, p. 386–393, 2024Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/84c80d10-b7cf-4e3a-8d14-8f4b797a015f/Tuning%20the%20Electronic%20and%20Mechanical%20Properties%20of%20Two-Dimensional%20Diamond%20through%20N%20and%20B%20Doping.pdf. Acesso em: 06 out. 2024.

    • APA

      Ipaves, B., Justo Filho, J. F., Sanyal, B., & Assali, L. V. C. (2024). Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping. Applied Electronic Materials, 6( 1), 386–393. doi:10.1021/acsaelm.3c01398

    • NLM

      Ipaves B, Justo Filho JF, Sanyal B, Assali LVC. Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping [Internet]. Applied Electronic Materials. 2024 ; 6( 1): 386–393.[citado 2024 out. 06 ] Available from: https://repositorio.usp.br/directbitstream/84c80d10-b7cf-4e3a-8d14-8f4b797a015f/Tuning%20the%20Electronic%20and%20Mechanical%20Properties%20of%20Two-Dimensional%20Diamond%20through%20N%20and%20B%20Doping.pdf

    • Vancouver

      Ipaves B, Justo Filho JF, Sanyal B, Assali LVC. Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping [Internet]. Applied Electronic Materials. 2024 ; 6( 1): 386–393.[citado 2024 out. 06 ] Available from: https://repositorio.usp.br/directbitstream/84c80d10-b7cf-4e3a-8d14-8f4b797a015f/Tuning%20the%20Electronic%20and%20Mechanical%20Properties%20of%20Two-Dimensional%20Diamond%20through%20N%20and%20B%20Doping.pdf

  • Artigo de periodico

    The Brazilian COVID-19 vaccination campaign: a modelling analysis of sociodemographic factors on uptake (2024)

    Li, Sabrina L. ; Prete Junior, Carlos Augusto ; Zarebski, Alexander E . ; Santos, Andreza Aruska de Souza ; Sabino, Ester Cerdeira ; Nascimento, Vítor Heloiz ; Wu, Chieh-Hsi ; Messina, Jane P

    Source: BMJ Open. Unidades: EP, FM

    Subjects: CAMPANHAS DE VACINAÇÃO, COVID-19, DESIGUALDADES

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      LI, Sabrina L. et al. The Brazilian COVID-19 vaccination campaign: a modelling analysis of sociodemographic factors on uptake. BMJ Open, v. 14, n. 1, p. 1-9, 2024Tradução . . Disponível em: https://doi.org/10.1136/bmjopen-2023-076354. Acesso em: 06 out. 2024.

    • APA

      Li, S. L., Prete Junior, C. A., Zarebski, A. E. ., Santos, A. A. de S., Sabino, E. C., Nascimento, V. H., et al. (2024). The Brazilian COVID-19 vaccination campaign: a modelling analysis of sociodemographic factors on uptake. BMJ Open, 14( 1), 1-9. doi:10.1136/bmjopen-2023-076354

    • NLM

      Li SL, Prete Junior CA, Zarebski AE ., Santos AA de S, Sabino EC, Nascimento VH, Wu C-H, Messina JP. The Brazilian COVID-19 vaccination campaign: a modelling analysis of sociodemographic factors on uptake [Internet]. BMJ Open. 2024 ; 14( 1): 1-9.[citado 2024 out. 06 ] Available from: https://doi.org/10.1136/bmjopen-2023-076354

    • Vancouver

      Li SL, Prete Junior CA, Zarebski AE ., Santos AA de S, Sabino EC, Nascimento VH, Wu C-H, Messina JP. The Brazilian COVID-19 vaccination campaign: a modelling analysis of sociodemographic factors on uptake [Internet]. BMJ Open. 2024 ; 14( 1): 1-9.[citado 2024 out. 06 ] Available from: https://doi.org/10.1136/bmjopen-2023-076354

  • Artigo de periodico

    Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform (2024)

    Verona, Bruno Marinaro; Simionato, Eligia; Palomino, Gustavo; Aldaya, Ivan; Penchel, Rafael Abrantes; Serrano, Ariana Maria da Conceição Lacorte Caniato ; Rehder, Gustavo Pamplona

    Source: IEEE Access. Unidade: EP

    Subjects: WIRELESS, MICROELETRÔNICA, TELECOMUNICAÇÕES, MATRIZES

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      VERONA, Bruno Marinaro et al. Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform. IEEE Access, v. 12, n. Ja 2024, p. 22132-22143, 2024Tradução . . Disponível em: https://doi.org/10.1109/ACCESS.2024.3357078. Acesso em: 06 out. 2024.

    • APA

      Verona, B. M., Simionato, E., Palomino, G., Aldaya, I., Penchel, R. A., Serrano, A. M. da C. L. C., & Rehder, G. P. (2024). Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform. IEEE Access, 12( Ja 2024), 22132-22143. doi:10.1109/ACCESS.2024.3357078

    • NLM

      Verona BM, Simionato E, Palomino G, Aldaya I, Penchel RA, Serrano AM da CLC, Rehder GP. Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform [Internet]. IEEE Access. 2024 ; 12( Ja 2024): 22132-22143.[citado 2024 out. 06 ] Available from: https://doi.org/10.1109/ACCESS.2024.3357078

    • Vancouver

      Verona BM, Simionato E, Palomino G, Aldaya I, Penchel RA, Serrano AM da CLC, Rehder GP. Implementation of a millimeter-wave butler matrix on metallic nanowires-filled membrane platform [Internet]. IEEE Access. 2024 ; 12( Ja 2024): 22132-22143.[citado 2024 out. 06 ] Available from: https://doi.org/10.1109/ACCESS.2024.3357078

  • Artigo de periodico

    Low-cost laser for fabrication of affordable graphene-induced microband sensors (2024)

    Ribeiro, Leonardo Marquez Alves; Feria, Deissy Johanna; Falcoswki, Paula Calli ; Carreño, Marcelo Nelson Paez ; Pereyra, Inés ; Bertotti, Mauro

    Source: Journal of Applied Electrochemistry. Unidades: EP, IQ

    Subjects: ESPECTROSCOPIA RAMAN, MICROSCOPIA

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      RIBEIRO, Leonardo Marquez Alves et al. Low-cost laser for fabrication of affordable graphene-induced microband sensors. Journal of Applied Electrochemistry, 2024Tradução . . Disponível em: https://dx.doi.org/10.1007/s10800-024-02132-w. Acesso em: 06 out. 2024.

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      Ribeiro, L. M. A., Feria, D. J., Falcoswki, P. C., Carreño, M. N. P., Pereyra, I., & Bertotti, M. (2024). Low-cost laser for fabrication of affordable graphene-induced microband sensors. Journal of Applied Electrochemistry. doi:10.1007/s10800-024-02132-w

    • NLM

      Ribeiro LMA, Feria DJ, Falcoswki PC, Carreño MNP, Pereyra I, Bertotti M. Low-cost laser for fabrication of affordable graphene-induced microband sensors [Internet]. Journal of Applied Electrochemistry. 2024 ;[citado 2024 out. 06 ] Available from: https://dx.doi.org/10.1007/s10800-024-02132-w

    • Vancouver

      Ribeiro LMA, Feria DJ, Falcoswki PC, Carreño MNP, Pereyra I, Bertotti M. Low-cost laser for fabrication of affordable graphene-induced microband sensors [Internet]. Journal of Applied Electrochemistry. 2024 ;[citado 2024 out. 06 ] Available from: https://dx.doi.org/10.1007/s10800-024-02132-w

  • Artigo de periodico

    Polynomial adaptative synchrosqueezing fourier transform: a method to optimize multiresolution (2024)

    Correia, Leonardo B; Justo Filho, João Francisco ; Angélico, Bruno Augusto

    Source: Digital Signal Processing. Unidade: EP

    Subjects: TRANSFORMADA DE FOURIER, PROCESSAMENTO DE SINAIS

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      CORREIA, Leonardo B e JUSTO FILHO, João Francisco e ANGÉLICO, Bruno Augusto. Polynomial adaptative synchrosqueezing fourier transform: a method to optimize multiresolution. Digital Signal Processing, v. 150, p. 1-9, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.dsp.2024.104526. Acesso em: 06 out. 2024.

    • APA

      Correia, L. B., Justo Filho, J. F., & Angélico, B. A. (2024). Polynomial adaptative synchrosqueezing fourier transform: a method to optimize multiresolution. Digital Signal Processing, 150, 1-9. doi:10.1016/j.dsp.2024.104526

    • NLM

      Correia LB, Justo Filho JF, Angélico BA. Polynomial adaptative synchrosqueezing fourier transform: a method to optimize multiresolution [Internet]. Digital Signal Processing. 2024 ;150 1-9.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.dsp.2024.104526

    • Vancouver

      Correia LB, Justo Filho JF, Angélico BA. Polynomial adaptative synchrosqueezing fourier transform: a method to optimize multiresolution [Internet]. Digital Signal Processing. 2024 ;150 1-9.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.dsp.2024.104526

  • Artigo de periodico

    Estimation of the electrical parameters of overhead transmission lines using Kalman filtering with particle swarm optimization (2023)

    Pereira, Ronaldo Francisco Ribeiro ; Albuquerque, Felipe Proença de ; Liboni, Luisa Helena Bartocci ; Costa, Eduardo Coelho Marques da; Monteiro, José Humberto A

    Source: IET Generation, Transmission & Distribution. Unidade: EP

    Subjects: ENERGIA ELÉTRICA, LINHAS DE TRANSMISSÃO DE ENERGIA ELÉTRICA, MÍNIMOS QUADRADOS

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      PEREIRA, Ronaldo Francisco Ribeiro et al. Estimation of the electrical parameters of overhead transmission lines using Kalman filtering with particle swarm optimization. IET Generation, Transmission & Distribution, v. 17, p. 27-38, 2023Tradução . . Disponível em: https://doi.org/10.1049/gtd2.12661. Acesso em: 06 out. 2024.

    • APA

      Pereira, R. F. R., Albuquerque, F. P. de, Liboni, L. H. B., Costa, E. C. M. da, & Monteiro, J. H. A. (2023). Estimation of the electrical parameters of overhead transmission lines using Kalman filtering with particle swarm optimization. IET Generation, Transmission & Distribution, 17, 27-38. doi:10.1049/gtd2.12661

    • NLM

      Pereira RFR, Albuquerque FP de, Liboni LHB, Costa ECM da, Monteiro JHA. Estimation of the electrical parameters of overhead transmission lines using Kalman filtering with particle swarm optimization [Internet]. IET Generation, Transmission & Distribution. 2023 ;17 27-38.[citado 2024 out. 06 ] Available from: https://doi.org/10.1049/gtd2.12661

    • Vancouver

      Pereira RFR, Albuquerque FP de, Liboni LHB, Costa ECM da, Monteiro JHA. Estimation of the electrical parameters of overhead transmission lines using Kalman filtering with particle swarm optimization [Internet]. IET Generation, Transmission & Distribution. 2023 ;17 27-38.[citado 2024 out. 06 ] Available from: https://doi.org/10.1049/gtd2.12661

  • Artigo de periodico

    Adapting the GACT-X aligner to accelerate minimap2 in an FPGA cloud instance (2023)

    Teng, Carolina; Achjian, Renan Weege; Wang, Jiang Chau ; Fonseca, Fernando Josepetti

    Source: Applied Sciences. Unidades: EP, ICB

    Subjects: COMPUTAÇÃO EM NUVEM, SISTEMAS HÍBRIDOS, GENÔMICA, BIOINFORMÁTICA

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      TENG, Carolina et al. Adapting the GACT-X aligner to accelerate minimap2 in an FPGA cloud instance. Applied Sciences, v. 13, n. 7, 2023Tradução . . Disponível em: https://doi.org/10.3390/app13074385. Acesso em: 06 out. 2024.

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      Teng, C., Achjian, R. W., Wang, J. C., & Fonseca, F. J. (2023). Adapting the GACT-X aligner to accelerate minimap2 in an FPGA cloud instance. Applied Sciences, 13( 7). doi:10.3390/app13074385

    • NLM

      Teng C, Achjian RW, Wang JC, Fonseca FJ. Adapting the GACT-X aligner to accelerate minimap2 in an FPGA cloud instance [Internet]. Applied Sciences. 2023 ; 13( 7):[citado 2024 out. 06 ] Available from: https://doi.org/10.3390/app13074385

    • Vancouver

      Teng C, Achjian RW, Wang JC, Fonseca FJ. Adapting the GACT-X aligner to accelerate minimap2 in an FPGA cloud instance [Internet]. Applied Sciences. 2023 ; 13( 7):[citado 2024 out. 06 ] Available from: https://doi.org/10.3390/app13074385

  • Artigo de periodico

    Fabrication of fluorescent PMMA-carbon nanodots optical films and their feasibility in improving solar cells efficiency using low-cost sustainable materials (2023)

    Soares, Marco C P ; Carreño, Marcelo Nelson Paez ; Pereyra, Inés ; Ramos, Carlos A. S.; Cid Sánchez, Manuel ; Goveia, Gilson Schaberle ; Chubaci, José Fernando Diniz

    Source: Brazilian Journal of Chemical Engineering. Unidades: EP, IF

    Assunto: FLUORESCÊNCIA

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      SOARES, Marco C P et al. Fabrication of fluorescent PMMA-carbon nanodots optical films and their feasibility in improving solar cells efficiency using low-cost sustainable materials. Brazilian Journal of Chemical Engineering, 2023Tradução . . Disponível em: https://doi.org/10.1007/s43153-023-00408-w. Acesso em: 06 out. 2024.

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      Soares, M. C. P., Carreño, M. N. P., Pereyra, I., Ramos, C. A. S., Cid Sánchez, M., Goveia, G. S., & Chubaci, J. F. D. (2023). Fabrication of fluorescent PMMA-carbon nanodots optical films and their feasibility in improving solar cells efficiency using low-cost sustainable materials. Brazilian Journal of Chemical Engineering. doi:10.1007/s43153-023-00408-w

    • NLM

      Soares MCP, Carreño MNP, Pereyra I, Ramos CAS, Cid Sánchez M, Goveia GS, Chubaci JFD. Fabrication of fluorescent PMMA-carbon nanodots optical films and their feasibility in improving solar cells efficiency using low-cost sustainable materials [Internet]. Brazilian Journal of Chemical Engineering. 2023 ;[citado 2024 out. 06 ] Available from: https://doi.org/10.1007/s43153-023-00408-w

    • Vancouver

      Soares MCP, Carreño MNP, Pereyra I, Ramos CAS, Cid Sánchez M, Goveia GS, Chubaci JFD. Fabrication of fluorescent PMMA-carbon nanodots optical films and their feasibility in improving solar cells efficiency using low-cost sustainable materials [Internet]. Brazilian Journal of Chemical Engineering. 2023 ;[citado 2024 out. 06 ] Available from: https://doi.org/10.1007/s43153-023-00408-w

  • Artigo de periodico

    Fractional-order MOS capacitor: experimental results and Monte Carlo analysis (2023)

    Fernandes, Lucas Almir dos Santos; Alayo Chávez, Marco Isaías ; Martino, João Antonio

    Source: Journal of Integrated Circuits and Systems. Unidade: EP

    Subjects: FRACTAIS, SIMULAÇÃO, AVALIAÇÃO DE DESEMPENHO

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      FERNANDES, Lucas Almir dos Santos e ALAYO CHÁVEZ, Marco Isaías e MARTINO, João Antonio. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-5, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.660. Acesso em: 06 out. 2024.

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      Fernandes, L. A. dos S., Alayo Chávez, M. I., & Martino, J. A. (2023). Fractional-order MOS capacitor: experimental results and Monte Carlo analysis. Journal of Integrated Circuits and Systems, 18( 1), 1-5. doi:10.29292/jics.v18i1.660

    • NLM

      Fernandes LA dos S, Alayo Chávez MI, Martino JA. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-5.[citado 2024 out. 06 ] Available from: https://doi.org/10.29292/jics.v18i1.660

    • Vancouver

      Fernandes LA dos S, Alayo Chávez MI, Martino JA. Fractional-order MOS capacitor: experimental results and Monte Carlo analysis [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-5.[citado 2024 out. 06 ] Available from: https://doi.org/10.29292/jics.v18i1.660

  • Artigo de periodico

    Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies (2023)

    Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der

    Source: Semiconductor Science and Technology. Unidade: EP

    Subjects: CIRCUITOS ANALÓGICOS, TRANSISTORES

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      TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, v. 38, n. 9, p. 1-12, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aceb84. Acesso em: 06 out. 2024.

    • APA

      Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, 38( 9), 1-12. doi:10.1088/1361-6641/aceb84

    • NLM

      Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2024 out. 06 ] Available from: https://doi.org/10.1088/1361-6641/aceb84

    • Vancouver

      Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2024 out. 06 ] Available from: https://doi.org/10.1088/1361-6641/aceb84

  • Artigo de periodico

    Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis (2023)

    Silva, Wenita de Lima; Toledo, Rodrigo do Nascimento; Gonçalez Filho, Walter; Nogueira, Alexandro de Moraes; Agopian, Paula Ghedini Der ; Martino, João Antonio

    Source: Solid State Electronics. Unidade: EP

    Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA

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      SILVA, Wenita de Lima et al. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, v. 202, p. 1-8, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108611. Acesso em: 06 out. 2024.

    • APA

      Silva, W. de L., Toledo, R. do N., Gonçalez Filho, W., Nogueira, A. de M., Agopian, P. G. D., & Martino, J. A. (2023). Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, 202, 1-8. doi:10.1016/j.sse.2023.108611

    • NLM

      Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.sse.2023.108611

    • Vancouver

      Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.sse.2023.108611

  • Trabalho de evento

    Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs (2023)

    Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der

    Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP

    Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, MICROELETRÔNICA, MATERIAIS NANOESTRUTURADOS

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      ARAÚJO, Gustavo Vinicius de e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302603. Acesso em: 06 out. 2024.

    • APA

      Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302603

    • NLM

      Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2024 out. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603

    • Vancouver

      Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2024 out. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603

  • Artigo de periodico

    Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications (2023)

    Silva, V C P; Martino, João Antonio ; Simoen, Eddy ; Veloso, Anabela; Agopian, Paula Ghedini Der

    Source: Solid State Electronics. Unidade: EP

    Subjects: TRANSISTORES, TEMPERATURA, NANOTECNOLOGIA, CIRCUITOS ANALÓGICOS, CIRCUITOS DIGITAIS

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    • ABNT

      SILVA, V C P et al. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications. Solid State Electronics, v. 208, p. 1-5, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108729. Acesso em: 06 out. 2024.

    • APA

      Silva, V. C. P., Martino, J. A., Simoen, E., Veloso, A., & Agopian, P. G. D. (2023). Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications. Solid State Electronics, 208, 1-5. doi:10.1016/j.sse.2023.108729

    • NLM

      Silva VCP, Martino JA, Simoen E, Veloso A, Agopian PGD. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications [Internet]. Solid State Electronics. 2023 ;208 1-5.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.sse.2023.108729

    • Vancouver

      Silva VCP, Martino JA, Simoen E, Veloso A, Agopian PGD. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications [Internet]. Solid State Electronics. 2023 ;208 1-5.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.sse.2023.108729

  • Artigo de periodico

    Experimental study of MISHEMT from 450k down to 200 k for analog applications (2023)

    Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der

    Source: Solid State Electronics. Unidade: EP

    Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, TEMPERATURA

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    • ABNT

      PERINA, Welder Fernandes et al. Experimental study of MISHEMT from 450k down to 200 k for analog applications. Solid State Electronics, v. 208, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108742. Acesso em: 06 out. 2024.

    • APA

      Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Experimental study of MISHEMT from 450k down to 200 k for analog applications. Solid State Electronics, 208, 1-4. doi:10.1016/j.sse.2023.108742

    • NLM

      Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450k down to 200 k for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.sse.2023.108742

    • Vancouver

      Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450k down to 200 k for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.sse.2023.108742

  • Trabalho de evento

    Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET (2023)

    Ramos, Daniel Augusto; Sasaki, Kátia Regina Akemi ; Rangel, Ricardo Cardoso; Duarte, Pedro Henrique; Martino, João Antonio

    Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP

    Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA

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    • ABNT

      RAMOS, Daniel Augusto et al. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302644. Acesso em: 06 out. 2024.

    • APA

      Ramos, D. A., Sasaki, K. R. A., Rangel, R. C., Duarte, P. H., & Martino, J. A. (2023). Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302644

    • NLM

      Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2024 out. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644

    • Vancouver

      Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2024 out. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644

  • Trabalho de evento

    Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K (2023)

    Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der

    Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP

    Subjects: TRANSISTORES, SEMICONDUTORES

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    • ABNT

      PERINA, Welder Fernandes et al. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302604. Acesso em: 06 out. 2024.

    • APA

      Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302604

    • NLM

      Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 out. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604

    • Vancouver

      Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 out. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604

  • Trabalho de evento

    Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET (2023)

    Ribeiro, Arllen D.R; Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der

    Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP

    Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA

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    • ABNT

      RIBEIRO, Arllen D.R et al. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302575. Acesso em: 06 out. 2024.

    • APA

      Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302575

    • NLM

      Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 out. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575

    • Vancouver

      Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 out. 06 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575

  • Artigo de periodico

    Scale-free dynamics of COVID-19 in a Brazilian city (2023)

    Policarpo, Josué ; Ramos, A. A. G. F.; Moraes, Osmar ; Peixoto, Pedro da Silva ; Buss, L.; Sabino, E. C. ; Nascimento, V. H. ; Deppman, Airton

    Source: Applied Mathematical Modelling. Unidades: IF, IME, FM, EP

    Subjects: MECÂNICA ESTATÍSTICA, FRACTAIS, SURTOS DE DOENÇAS, COVID-19

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    • ABNT

      POLICARPO, Josué et al. Scale-free dynamics of COVID-19 in a Brazilian city. Applied Mathematical Modelling, v. 121, p. 19 ; on-line, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.apm.2023.03.039. Acesso em: 06 out. 2024.

    • APA

      Policarpo, J., Ramos, A. A. G. F., Moraes, O., Peixoto, P. da S., Buss, L., Sabino, E. C., et al. (2023). Scale-free dynamics of COVID-19 in a Brazilian city. Applied Mathematical Modelling, 121, 19 ; on-line. doi:10.1016/j.apm.2023.03.039

    • NLM

      Policarpo J, Ramos AAGF, Moraes O, Peixoto P da S, Buss L, Sabino EC, Nascimento VH, Deppman A. Scale-free dynamics of COVID-19 in a Brazilian city [Internet]. Applied Mathematical Modelling. 2023 ; 121 19 ; on-line.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.apm.2023.03.039

    • Vancouver

      Policarpo J, Ramos AAGF, Moraes O, Peixoto P da S, Buss L, Sabino EC, Nascimento VH, Deppman A. Scale-free dynamics of COVID-19 in a Brazilian city [Internet]. Applied Mathematical Modelling. 2023 ; 121 19 ; on-line.[citado 2024 out. 06 ] Available from: https://doi.org/10.1016/j.apm.2023.03.039

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