Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET (2022)
- Authors:
- USP affiliated authors: MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF ; MACCHIONE, EDUARDO LUIZ AUGUSTO - IF ; MENEGASSO, RICARDO - IF ; ALBERTON, SAULO GABRIEL PEREIRA NASCIMENTO - IF ; AGUIAR, VITOR ÂNGELO PAULINO DE - IF ; CESÁRIO, GREICIANE DE JESUS - IF ; SANTOS, HELLEN CRISTINE DOS - IF ; SCARDUELLI, VALDIR BRUNETTI - IF ; NÚÑEZ, JUAN ANTONIO ALCÁNTARA - IF
- Unidade: IF
- DOI: 10.1016/j.microrel.2022.114784
- Subjects: FÍSICA NUCLEAR; ÍONS PESADOS; SEMICONDUTORES
- Keywords: Single-event burnout; Power MOSFET; Heavy-ion; Charge deposition; Worst-case
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Microelectronics Reliability
- ISSN: 1872-941X
- Volume/Número/Paginação/Ano: v. 137, 21 de setembro de 2022, número do artigo: 114784, online
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ALBERTON, S. G. et al. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, v. 137, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2022.114784. Acesso em: 24 abr. 2024. -
APA
Alberton, S. G., Aguiar, V., Medina, N. H., Added, N., Macchione, E. L. A., Menegasso, R., et al. (2022). Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET. Microelectronics Reliability, 137. doi:10.1016/j.microrel.2022.114784 -
NLM
Alberton SG, Aguiar V, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2024 abr. 24 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784 -
Vancouver
Alberton SG, Aguiar V, Medina NH, Added N, Macchione ELA, Menegasso R, Cesário GJ, Santos HC, Scarduelli VB, Alcántara-Núñez JA, Guazzelli MA, Santos RBB, Flechas D. Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET [Internet]. Microelectronics Reliability. 2022 ; 137[citado 2024 abr. 24 ] Available from: https://doi.org/10.1016/j.microrel.2022.114784 - Critical dependencies of heavy ion-induced destructive failures in electronic devices
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Informações sobre o DOI: 10.1016/j.microrel.2022.114784 (Fonte: oaDOI API)
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