Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates (2016)
- Authors:
- Autor USP: MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- DOI: 10.1107/S1600576716004441
- Subjects: SEMICONDUTORES; RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Crystallography
- Volume/Número/Paginação/Ano: v. 49, n. 3, p. 798-805, jun. 2016
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
DOMAGALA, Jaroslaw Z. et al. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. Journal of Applied Crystallography, v. 49, n. ju 2016, p. 798-805, 2016Tradução . . Disponível em: https://doi.org/10.1107/S1600576716004441. Acesso em: 28 fev. 2026. -
APA
Domagala, J. Z., Sarzynski, M., Mazdziarz, M., Dluzewski, P., Leszczynski, M., & Morelhão, S. L. (2016). Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. Journal of Applied Crystallography, 49( ju 2016), 798-805. doi:10.1107/S1600576716004441 -
NLM
Domagala JZ, Sarzynski M, Mazdziarz M, Dluzewski P, Leszczynski M, Morelhão SL. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. Journal of Applied Crystallography. 2016 ; 49( ju 2016): 798-805.[citado 2026 fev. 28 ] Available from: https://doi.org/10.1107/S1600576716004441 -
Vancouver
Domagala JZ, Sarzynski M, Mazdziarz M, Dluzewski P, Leszczynski M, Morelhão SL. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates [Internet]. Journal of Applied Crystallography. 2016 ; 49( ju 2016): 798-805.[citado 2026 fev. 28 ] Available from: https://doi.org/10.1107/S1600576716004441 - Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors
- Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators
- Intrinsic spatial resolution limit of the analyzer-based X-ray phase contrast imaging technique
- Lateral lattice coherence lengths in thin lms of bismuth telluride topological insulators, with overview on polarization factors for X-ray dynamical di raction in monochromator crystals
- Dislocations in dendritic web silicon
- Investigação da polarização da radiação síncrotron por varredura "fi"
- Synchrotron radiation X-ray multiple diffraction in the study of doped KDP
- An x-ray diffractometer for accurate structural invariant phase determination
- Determinação do coeficiente piezoelétrico do cristal de KDP sando difração múltipla com fonte de radiação síncroton
- Automatic x-ray crystallographic phasing at LNLS
Informações sobre o DOI: 10.1107/S1600576716004441 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
| Journal of Applied Crysta... | Direct link |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
