Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates (2016)
- Authors:
- USP affiliated authors: MORELHAO, SERGIO LUIZ - IF
- Unidades: IF
- DOI: 10.1038/srep28128
- Subjects: SEMICONDUTORES; RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Applied Crystallography
- Volume/Número/Paginação/Ano: v. 49, n. 3, p. 798-805, jun. 2016
- Este periódico é de acesso aberto
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: gold
- Licença: cc-by
-
ABNT
DOMAGALA, Jaroslaw Z.; SARZYNSKI, Marcin; MAZDZIARZ, Marcin; et al. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. Journal of Applied Crystallography, Chester, v. 49, n. ju 2016, p. 798-805, 2016. DOI: 10.1038/srep28128. -
APA
Domagala, J. Z., Sarzynski, M., Mazdziarz, M., Dluzewski, P., Leszczynski, M., & Morelhao, S. L. (2016). Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. Journal of Applied Crystallography, 49( ju 2016), 798-805. doi:10.1038/srep28128 -
NLM
Domagala JZ, Sarzynski M, Mazdziarz M, Dluzewski P, Leszczynski M, Morelhao SL. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. Journal of Applied Crystallography. 2016 ; 49( ju 2016): 798-805. -
Vancouver
Domagala JZ, Sarzynski M, Mazdziarz M, Dluzewski P, Leszczynski M, Morelhao SL. Hybrid reciprocal lattice: application to layer stress determination in 'GA''AL''N'/'GA''N'(0001) systems with patterned substrates. Journal of Applied Crystallography. 2016 ; 49( ju 2016): 798-805. - An x-ray topography study of the dendritic web silicon growth process
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Informações sobre o DOI: 10.1038/srep28128 (Fonte: oaDOI API)
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