Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by MOVPE (1990)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFQSC
- Unidade: IFQSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Abstracts
- Conference titles: International Conference on Metalorganic Vapor Phase Epitaxy
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ABNT
BERNUSSI, A. A. et al. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by MOVPE. 1990, Anais.. Aachen: , Universidade de São Paulo, 1990. . Acesso em: 19 out. 2024. -
APA
Bernussi, A. A., Iikawa, F., Motisuke, P., & Basmaji, P. (1990). Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by MOVPE. In Abstracts. Aachen: , Universidade de São Paulo. -
NLM
Bernussi AA, Iikawa F, Motisuke P, Basmaji P. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by MOVPE. Abstracts. 1990 ;[citado 2024 out. 19 ] -
Vancouver
Bernussi AA, Iikawa F, Motisuke P, Basmaji P. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by MOVPE. Abstracts. 1990 ;[citado 2024 out. 19 ] - Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
- Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Negative magnetoresistance in coupled quantum wells
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