Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs (2010)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- DOI: 10.1016/j.sse.2010.07.007
- Subjects: TRANSISTORES; ELETRODO
- Language: Inglês
- Imprenta:
- Source:
- Título: Solid-State Electronics
- ISSN: 0378-7796
- Volume/Número/Paginação/Ano: v.54, n.12, p. 1592-1597, 2010
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
RODRIGUES, M. et al. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs. Solid-State Electronics, v. 54, n. 12, p. 1592-1597, 2010Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2010.07.007. Acesso em: 20 jan. 2026. -
APA
Rodrigues, M., Martino, J. A., Mercha, A., Collaert, N., Simoen, E., & Claeys, C. (2010). Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs. Solid-State Electronics, 54( 12), 1592-1597. doi:10.1016/j.sse.2010.07.007 -
NLM
Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs [Internet]. Solid-State Electronics. 2010 ;54( 12): 1592-1597.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1016/j.sse.2010.07.007 -
Vancouver
Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs [Internet]. Solid-State Electronics. 2010 ;54( 12): 1592-1597.[citado 2026 jan. 20 ] Available from: https://doi.org/10.1016/j.sse.2010.07.007 - Analog performance and application of graded-channel fully depleted SOI MOSFETs
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- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Simple method to determine the poly gate doping concentration based on poly depletion effect
- A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices
- Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
- A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
- A simple method to model nonrectangular-gate layout in SOI MOSFETs
- New leakage drain current model for high temperature soi mesfet
- Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
Informações sobre o DOI: 10.1016/j.sse.2010.07.007 (Fonte: oaDOI API)
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