Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect (2007)
- Authors:
- USP affiliated authors: POUSSEP, IOURI - IFSC ; ARAKAKI, HAROLDO - IFSC ; SOUZA, CARLOS ALBERTO DE - IFSC
- Unidade: IFSC
- Subjects: EFEITO HALL; FÍSICA MODERNA; SISTEMAS ELÉTRICOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: International Journal of Modern Physics B
- ISSN: 0217-9792
- Volume/Número/Paginação/Ano: v. 21, n. 8/9, p. 1409-1413, Apr. 2007
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ABNT
PUSEP, Yuri A. et al. Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect. International Journal of Modern Physics B, v. 21, n. 8/9, p. 1409-1413, 2007Tradução . . Acesso em: 19 set. 2024. -
APA
Pusep, Y. A., Guimarães, F. E. G., Arakaki, H., Souza, C. A., & Chiquito, A. J. (2007). Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect. International Journal of Modern Physics B, 21( 8/9), 1409-1413. -
NLM
Pusep YA, Guimarães FEG, Arakaki H, Souza CA, Chiquito AJ. Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect. International Journal of Modern Physics B. 2007 ; 21( 8/9): 1409-1413.[citado 2024 set. 19 ] -
Vancouver
Pusep YA, Guimarães FEG, Arakaki H, Souza CA, Chiquito AJ. Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect. International Journal of Modern Physics B. 2007 ; 21( 8/9): 1409-1413.[citado 2024 set. 19 ] - Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices
- Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices
- Regimes of quantum transport in superlattices in a weak magnetic field
- Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Quantum interference in the presence of a metal-to-insulator transition
- Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices
- Disorder induced coherence-incoherence crossover in Random GaAs/AlGaAs superlattices
- Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Instrumentacao eletronica de apoio para um sistema de epitaxia por feixes moleculares
- Dispositivo PIN com múltiplos poços de InGaAs crescidos em substratos de GaAs (311)A dopados apenas com Si
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