Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices (2004)
- Authors:
- USP affiliated authors: POUSSEP, IOURI - IFSC ; GUIMARAES, FRANCISCO EDUARDO GONTIJO - IFSC ; ARAKAKI, HAROLDO - IFSC ; SOUZA, CARLOS ALBERTO DE - IFSC
- Unidade: IFSC
- DOI: 10.1103/PhysRevB.70.092301
- Subjects: FOTOLUMINESCÊNCIA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2004
- Source:
- Título: Physical Review B
- ISSN: 1098-0121
- Volume/Número/Paginação/Ano: v. 70, n. 9, p. 092301-1-092301-4, Sep. 2004
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PUSEP, Yuri A et al. Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B, v. 70, n. 9, p. Se 2004, 2004Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.70.092301. Acesso em: 27 dez. 2025. -
APA
Pusep, Y. A., Guimarães, F. E. G., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2004). Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B, 70( 9), Se 2004. doi:10.1103/PhysRevB.70.092301 -
NLM
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices [Internet]. Physical Review B. 2004 ; 70( 9): Se 2004.[citado 2025 dez. 27 ] Available from: https://doi.org/10.1103/PhysRevB.70.092301 -
Vancouver
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices [Internet]. Physical Review B. 2004 ; 70( 9): Se 2004.[citado 2025 dez. 27 ] Available from: https://doi.org/10.1103/PhysRevB.70.092301 - Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices
- Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect
- Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices
- Effect of disorder on optical band edge of random doped GaAs/AlGaAs superlattices
- Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices
- Regimes of quantum transport in superlattices in a weak magnetic field
- Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Disorder induced coherence-incoherence crossover in Random GaAs/AlGaAs superlattices
- Quantum interference in the presence of a metal-to-insulator transition
- Instrumentacao eletronica de apoio para um sistema de epitaxia por feixes moleculares
Informações sobre o DOI: 10.1103/PhysRevB.70.092301 (Fonte: oaDOI API)
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