Quantum interference in the presence of a metal-to-insulator transition (2003)
- Authors:
- USP affiliated authors: POUSSEP, IOURI - IFSC ; ARAKAKI, HAROLDO - IFSC
- Unidade: IFSC
- DOI: 10.1103/physrevb.68.205321
- Subjects: SEMICONDUTORES; METAIS
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2003
- Source:
- Título do periódico: Physical Review B
- ISSN: 1098-0121
- Volume/Número/Paginação/Ano: v. 68, n. 20, p. 205321-1-205321-5, Nov. 2003
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PUSEP, Yuri A. e ARAKAKI, Haroldo e SOUZA, C. A. Quantum interference in the presence of a metal-to-insulator transition. Physical Review B, v. No 2003, n. 20, p. 205321-1-205321-5, 2003Tradução . . Disponível em: https://doi.org/10.1103/physrevb.68.205321. Acesso em: 25 abr. 2024. -
APA
Pusep, Y. A., Arakaki, H., & Souza, C. A. (2003). Quantum interference in the presence of a metal-to-insulator transition. Physical Review B, No 2003( 20), 205321-1-205321-5. doi:10.1103/physrevb.68.205321 -
NLM
Pusep YA, Arakaki H, Souza CA. Quantum interference in the presence of a metal-to-insulator transition [Internet]. Physical Review B. 2003 ; No 2003( 20): 205321-1-205321-5.[citado 2024 abr. 25 ] Available from: https://doi.org/10.1103/physrevb.68.205321 -
Vancouver
Pusep YA, Arakaki H, Souza CA. Quantum interference in the presence of a metal-to-insulator transition [Internet]. Physical Review B. 2003 ; No 2003( 20): 205321-1-205321-5.[citado 2024 abr. 25 ] Available from: https://doi.org/10.1103/physrevb.68.205321 - Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect
- Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices
- Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices
- Regimes of quantum transport in superlattices in a weak magnetic field
- Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Disorder induced coherence-incoherence crossover in Random GaAs/AlGaAs superlattices
- Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices
- Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Radial multiple quantum well GaAs/AlGaAs heterostructure formed in nanowires
- Effect of disorder on optical band edge of random doped GaAs/AlGaAs superlattices
Informações sobre o DOI: 10.1103/physrevb.68.205321 (Fonte: oaDOI API)
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