Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices (2005)
- Authors:
- USP affiliated authors: POUSSEP, IOURI - IFSC ; ARAKAKI, HAROLDO - IFSC ; SOUZA, CARLOS ALBERTO DE - IFSC
- Unidade: IFSC
- Subjects: SEMICONDUTORES; CAMPO MAGNÉTICO
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2005
- Source:
- Título: Physical Review B
- ISSN: 1098-0121
- Volume/Número/Paginação/Ano: v. 71, n. 3, p. 035323-1-035323-6, Jan. 2005
-
ABNT
PUSEP, Yuri A et al. Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B, v. 71, n. Ja 2005, p. 035323-1-035323-6, 2005Tradução . . Acesso em: 05 out. 2024. -
APA
Pusep, Y. A., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2005). Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B, 71( Ja 2005), 035323-1-035323-6. -
NLM
Pusep YA, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B. 2005 ; 71( Ja 2005): 035323-1-035323-6.[citado 2024 out. 05 ] -
Vancouver
Pusep YA, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices. Physical Review B. 2005 ; 71( Ja 2005): 035323-1-035323-6.[citado 2024 out. 05 ] - Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect
- Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices
- Regimes of quantum transport in superlattices in a weak magnetic field
- Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Quantum interference in the presence of a metal-to-insulator transition
- Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices
- Disorder induced coherence-incoherence crossover in Random GaAs/AlGaAs superlattices
- Instrumentacao eletronica de apoio para um sistema de epitaxia por feixes moleculares
- Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Dispositivo PIN com múltiplos poços de InGaAs crescidos em substratos de GaAs (311)A dopados apenas com Si
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