Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices (2003)
- Authors:
- USP affiliated authors: POUSSEP, IOURI - IFSC ; ARAKAKI, HAROLDO - IFSC
- Unidade: IFSC
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2003
- Source:
- Título do periódico: Physical Review B
- ISSN: 1098-0121
- Volume/Número/Paginação/Ano: v. 68, n. 19, p. 195207-1-195207-7, Nov. 2003
-
ABNT
PUSEP, Yuri A. et al. Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B, v. No 2003, n. 19, p. 195207-1-195207-7, 2003Tradução . . Acesso em: 24 abr. 2024. -
APA
Pusep, Y. A., Ribeiro, M. B., Arakaki, H., Souza, C. A., Zanello, P. A., Chiquito, A. J., et al. (2003). Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B, No 2003( 19), 195207-1-195207-7. -
NLM
Pusep YA, Ribeiro MB, Arakaki H, Souza CA, Zanello PA, Chiquito AJ, Malzer S, Döhler GH. Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B. 2003 ; No 2003( 19): 195207-1-195207-7.[citado 2024 abr. 24 ] -
Vancouver
Pusep YA, Ribeiro MB, Arakaki H, Souza CA, Zanello PA, Chiquito AJ, Malzer S, Döhler GH. Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B. 2003 ; No 2003( 19): 195207-1-195207-7.[citado 2024 abr. 24 ] - Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect
- Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices
- Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices
- Regimes of quantum transport in superlattices in a weak magnetic field
- Quantum interference in the presence of a metal-to-insulator transition
- Disorder induced coherence-incoherence crossover in Random GaAs/AlGaAs superlattices
- Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices
- Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Radial multiple quantum well GaAs/AlGaAs heterostructure formed in nanowires
- Effect of disorder on optical band edge of random doped GaAs/AlGaAs superlattices
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