Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices (2004)
- Authors:
- USP affiliated authors: POUSSEP, IOURI - IFSC ; ARAKAKI, HAROLDO - IFSC ; SOUZA, CARLOS ALBERTO DE - IFSC
- Unidade: IFSC
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: International Journal of Modern Physics B
- ISSN: 0217-9792
- Volume/Número/Paginação/Ano: v. 18, n. 27/29, p. 3629-3632, Nov. 2004
-
ABNT
PUSEP, Yuri A et al. Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices. International Journal of Modern Physics B, v. No 2004, n. 27/29, p. 3629-3632, 2004Tradução . . Acesso em: 27 dez. 2025. -
APA
Pusep, Y. A., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Dohler, G. H. (2004). Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices. International Journal of Modern Physics B, No 2004( 27/29), 3629-3632. -
NLM
Pusep YA, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Dohler GH. Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices. International Journal of Modern Physics B. 2004 ; No 2004( 27/29): 3629-3632.[citado 2025 dez. 27 ] -
Vancouver
Pusep YA, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Dohler GH. Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices. International Journal of Modern Physics B. 2004 ; No 2004( 27/29): 3629-3632.[citado 2025 dez. 27 ] - Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect
- Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices
- Regimes of quantum transport in superlattices in a weak magnetic field
- Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices
- Disorder induced coherence-incoherence crossover in Random GaAs/AlGaAs superlattices
- Quantum interference in the presence of a metal-to-insulator transition
- Instrumentacao eletronica de apoio para um sistema de epitaxia por feixes moleculares
- Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Dispositivo PIN com múltiplos poços de InGaAs crescidos em substratos de GaAs (311)A dopados apenas com Si
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
