Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices (2004)
- Authors:
- USP affiliated authors: POUSSEP, IOURI - IFSC ; GUIMARAES, FRANCISCO EDUARDO GONTIJO - IFSC ; ARAKAKI, HAROLDO - IFSC ; SOUZA, CARLOS ALBERTO DE - IFSC
- Unidade: IFSC
- Subjects: SEMICONDUTORES; FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título: Abstracts
- Conference titles: International Conference on the Physics of Semiconductors - ICPS
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ABNT
PUSEP, Yuri A et al. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. 2004, Anais.. Flagstaff: Instituto de Física de São Carlos, Universidade de São Paulo, 2004. . Acesso em: 21 fev. 2026. -
APA
Pusep, Y. A., Guimarães, F. E. G., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Dahler, G. H. (2004). Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. In Abstracts. Flagstaff: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Dahler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. Abstracts. 2004 ;[citado 2026 fev. 21 ] -
Vancouver
Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Dahler GH. Effect of the electron and hole scattering potentials compensation on optical band edge of heavily doped GaAs/AlGaAs superlattices. Abstracts. 2004 ;[citado 2026 fev. 21 ] - Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Disorder-driven coherence-incoherence crossover in random GaAs/'Al IND.0,3''Ga IND.0,7': as superlattices
- Regimes of quantum transport in superlattices in a weak magnetic field
- Disorder induced coherence-incoherence crossover in random GaAs/AlGaAs superlattices
- Inhomogeneity of electron liquid and effects of interlayer coupling in GaAs/AlGaAs superlattices in the regime of the quantum Hall effect
- Effect of disorder on optical band edge of random doped GaAs/AlGaAs superlattices
- Quantum interference in the presence of a metal-to-insulator transition
- Disorder induced coherence-incoherence crossover in Random GaAs/AlGaAs superlattices
- Anisotropy of quantum interference in disordered GaAs/'Al IND.x''Ga IND.1-x'As superlattices
- Instrumentacao eletronica de apoio para um sistema de epitaxia por feixes moleculares
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