Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1016/s1386-9477(02)00741-5
- Assunto: ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
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ABNT
MONTE, A F G et al. Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities. Physica E, v. 17, n. 1-4, p. 122-123, 2003Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(02)00741-5. Acesso em: 12 jan. 2026. -
APA
Monte, A. F. G., Sales, F. V. de, Silva, S. W. da, Soler, M. A. G., Cruz, J. M. R., Morais, P. C., et al. (2003). Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities. Physica E, 17( 1-4), 122-123. doi:10.1016/s1386-9477(02)00741-5 -
NLM
Monte AFG, Sales FV de, Silva SW da, Soler MAG, Cruz JMR, Morais PC, Silva MJ da, Quivy AA, Leite JR. Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities [Internet]. Physica E. 2003 ; 17( 1-4): 122-123.[citado 2026 jan. 12 ] Available from: https://doi.org/10.1016/s1386-9477(02)00741-5 -
Vancouver
Monte AFG, Sales FV de, Silva SW da, Soler MAG, Cruz JMR, Morais PC, Silva MJ da, Quivy AA, Leite JR. Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities [Internet]. Physica E. 2003 ; 17( 1-4): 122-123.[citado 2026 jan. 12 ] Available from: https://doi.org/10.1016/s1386-9477(02)00741-5 - Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells
- Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates
- Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density
- Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
- Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates
- CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots
Informações sobre o DOI: 10.1016/s1386-9477(02)00741-5 (Fonte: oaDOI API)
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