A new experimental procedure to obtain the refractive index of MOS gate oxynitrides grown by RTP in N2O atmosphere (2000)
- Authors:
- Autor USP: SANTOS FILHO, SEBASTIAO GOMES DOS - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/UA/UFRGS/UNICAMP/USP
- Publisher place: Manaus
- Date published: 2000
- Source:
- Título: SBMicro 2000: proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
TOQUETTI, Leandro Zeidan e SANTOS FILHO, Sebastião Gomes dos. A new experimental procedure to obtain the refractive index of MOS gate oxynitrides grown by RTP in N2O atmosphere. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 23 jan. 2026. -
APA
Toquetti, L. Z., & Santos Filho, S. G. dos. (2000). A new experimental procedure to obtain the refractive index of MOS gate oxynitrides grown by RTP in N2O atmosphere. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP. -
NLM
Toquetti LZ, Santos Filho SG dos. A new experimental procedure to obtain the refractive index of MOS gate oxynitrides grown by RTP in N2O atmosphere. SBMicro 2000: proceedings. 2000 ;[citado 2026 jan. 23 ] -
Vancouver
Toquetti LZ, Santos Filho SG dos. A new experimental procedure to obtain the refractive index of MOS gate oxynitrides grown by RTP in N2O atmosphere. SBMicro 2000: proceedings. 2000 ;[citado 2026 jan. 23 ] - Formation and stability of Ni(Pt)Si/Poly-Si layered structure
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