Mapping of Bragg-surface diffraction of InP/GaAs (100) structure (1998)
- Authors:
- Autor USP: MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- Assunto: CRISTALOGRAFIA
- Language: Inglês
- Imprenta:
- Publisher: North-Holland
- Publisher place: Amsterdam
- Date published: 1998
- Source:
- Título: Journal Crystal Growth
- Volume/Número/Paginação/Ano: v. 188, n. 1-4, p. 220-224, 1998
- Conference titles: International Conference on Chemical Beam Epitaxy and Related Growth Techniques
-
ABNT
AVANCI, L H et al. Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. Amsterdam: North-Holland. . Acesso em: 24 fev. 2026. , 1998 -
APA
Avanci, L. H., Hayashi, M. A., Cardoso, L. P., Morelhão, S. L., Riesz, F., Rakennus, K., & Hakkarainen, T. (1998). Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. Amsterdam: North-Holland. -
NLM
Avanci LH, Hayashi MA, Cardoso LP, Morelhão SL, Riesz F, Rakennus K, Hakkarainen T. Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. 1998 ; 188( 1-4): 220-224.[citado 2026 fev. 24 ] -
Vancouver
Avanci LH, Hayashi MA, Cardoso LP, Morelhão SL, Riesz F, Rakennus K, Hakkarainen T. Mapping of Bragg-surface diffraction of InP/GaAs (100) structure. Journal Crystal Growth. 1998 ; 188( 1-4): 220-224.[citado 2026 fev. 24 ] - Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors
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