Asymmetry of the Hall conductance fluctuations in a random magnetic field (1998)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: SEMICONDUTORES; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Ioffe Institute
- Publisher place: Saint Petersburg
- Date published: 1998
- Conference titles: International Symposium Nanostructures: Physics and Technology
-
ABNT
NASTAUSHEV, Yu V et al. Asymmetry of the Hall conductance fluctuations in a random magnetic field. 1998, Anais.. Saint Petersburg: Ioffe Institute, 1998. . Acesso em: 13 jun. 2025. -
APA
Nastaushev, Y. V., Gusev, G. M., Bykov, A. A., Lubyshev, D. I., Maude, D. K., Portal, J. C., et al. (1998). Asymmetry of the Hall conductance fluctuations in a random magnetic field. In . Saint Petersburg: Ioffe Institute. -
NLM
Nastaushev YV, Gusev GM, Bykov AA, Lubyshev DI, Maude DK, Portal JC, Gennser U, Basmaji P. Asymmetry of the Hall conductance fluctuations in a random magnetic field. 1998 ;[citado 2025 jun. 13 ] -
Vancouver
Nastaushev YV, Gusev GM, Bykov AA, Lubyshev DI, Maude DK, Portal JC, Gennser U, Basmaji P. Asymmetry of the Hall conductance fluctuations in a random magnetic field. 1998 ;[citado 2025 jun. 13 ] - Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
- Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Negative magnetoresistance in coupled quantum wells
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
