Fabrication of indenpendent contacts to two closely spaced delta-doped GaAs layers (1997)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física
- Publisher place: São Paulo
- Date published: 1997
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
GUSEV, G M et al. Fabrication of indenpendent contacts to two closely spaced delta-doped GaAs layers. 1997, Anais.. São Paulo: Sociedade Brasileira de Física, 1997. . Acesso em: 19 set. 2024. -
APA
Gusev, G. M., Quivy, A. A., Leite, J. R., & Rossi, J. C. (1997). Fabrication of indenpendent contacts to two closely spaced delta-doped GaAs layers. In Resumos. São Paulo: Sociedade Brasileira de Física. -
NLM
Gusev GM, Quivy AA, Leite JR, Rossi JC. Fabrication of indenpendent contacts to two closely spaced delta-doped GaAs layers. Resumos. 1997 ;[citado 2024 set. 19 ] -
Vancouver
Gusev GM, Quivy AA, Leite JR, Rossi JC. Fabrication of indenpendent contacts to two closely spaced delta-doped GaAs layers. Resumos. 1997 ;[citado 2024 set. 19 ] - Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
- Alignment of self-organized MBE-grown quantum dots
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells
- Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates
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