'SI' / 'SI'o ind.2' electronic roughness: a consequence of 'SI' / 'SI''O IND.2' interface roughness (1995)
- Authors:
- USP affiliated authors: SANTOS FILHO, SEBASTIAO GOMES DOS - EP ; HASENACK, CLAUS MARTIN - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher place: Rio de Janeiro
- Date published: 1995
- Conference titles: Brazilian/German Workshop on Applied Surface Science
-
ABNT
LOPES, M C V et al. 'SI' / 'SI'o ind.2' electronic roughness: a consequence of 'SI' / 'SI''O IND.2' interface roughness. 1995, Anais.. Rio de Janeiro: Escola Politécnica, Universidade de São Paulo, 1995. . Acesso em: 24 abr. 2024. -
APA
Lopes, M. C. V., Santos Filho, S. G. dos, Hasenack, C. M., & Baranauskas, V. (1995). 'SI' / 'SI'o ind.2' electronic roughness: a consequence of 'SI' / 'SI''O IND.2' interface roughness. In . Rio de Janeiro: Escola Politécnica, Universidade de São Paulo. -
NLM
Lopes MCV, Santos Filho SG dos, Hasenack CM, Baranauskas V. 'SI' / 'SI'o ind.2' electronic roughness: a consequence of 'SI' / 'SI''O IND.2' interface roughness. 1995 ;[citado 2024 abr. 24 ] -
Vancouver
Lopes MCV, Santos Filho SG dos, Hasenack CM, Baranauskas V. 'SI' / 'SI'o ind.2' electronic roughness: a consequence of 'SI' / 'SI''O IND.2' interface roughness. 1995 ;[citado 2024 abr. 24 ] - Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon
- Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom)
- A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps
- Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching
- Deposition and renoval of surface contaminants from silicon wafers by means of a diluted hp dip followed or not by a isopropyl alcohol boil
- Plating mechanisms of cooper onto silicon surfaces diluted hydrofluoric solutions
- Influence of different rapid thermal oxidation recipes on the rms roughness of the 'SI'-'SI''O IND.2' interface
- Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics
- Obtencao de camadas ultrafinas de oxido de silicio por oxidacao termica rapida
- Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings
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