Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates (2004)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physica E
- Volume/Número/Paginação/Ano: v. 23, n. 3-4, p. 466-470, 2004
-
ABNT
MONTE, A F G et al. Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates. Physica E, v. 23, n. 3-4, p. 466-470, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c. Acesso em: 25 set. 2024. -
APA
Monte, A. F. G., Soler, M. A. G., Silva, S. W. da, Rodrigues, B. B. D., Morais, P. C., Quivy, A. A., & Leite, J. R. (2004). Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates. Physica E, 23( 3-4), 466-470. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c -
NLM
Monte AFG, Soler MAG, Silva SW da, Rodrigues BBD, Morais PC, Quivy AA, Leite JR. Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates [Internet]. Physica E. 2004 ; 23( 3-4): 466-470.[citado 2024 set. 25 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c -
Vancouver
Monte AFG, Soler MAG, Silva SW da, Rodrigues BBD, Morais PC, Quivy AA, Leite JR. Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates [Internet]. Physica E. 2004 ; 23( 3-4): 466-470.[citado 2024 set. 25 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c - Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
- Alignment of self-organized MBE-grown quantum dots
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells
- Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates
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