ReP USP - Resultado da busca

Artigo de periodico
ISFET fabrication and characterization for hydrogen peroxide sensing (2023)
Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Ramos, Daniel Augusto; Yojo, Leonardo Shimizu; Mori, Carlos Augusto Bergfeld; Sasaki, Katia Regina Akemi; Agopian, Paula Ghedini Der ; Martino, João Antonio
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assuntos: TRANSISTORES, SOLUÇÕES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DUARTE, Pedro Henrique et al. ISFET fabrication and characterization for hydrogen peroxide sensing. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.646. Acesso em: 15 nov. 2025.
APA
Duarte, P. H., Rangel, R. C., Ramos, D. A., Yojo, L. S., Mori, C. A. B., Sasaki, K. R. A., et al. (2023). ISFET fabrication and characterization for hydrogen peroxide sensing. Journal of Integrated Circuits and Systems, 18( 1), 1-4. doi:10.29292/jics.v18i1.646
NLM
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. ISFET fabrication and characterization for hydrogen peroxide sensing [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-4.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v18i1.646
Vancouver
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. ISFET fabrication and characterization for hydrogen peroxide sensing [Internet]. Journal of Integrated Circuits and Systems. 2023 ; 18( 1): 1-4.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v18i1.646
Artigo de periodico
Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assuntos: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.653. Acesso em: 15 nov. 2025.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, 18( 1), 1-6. doi:10.29292/jics.v18il.653
NLM
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Artigo de periodico
Reconfigurable SOI-MOSFET: past, present and future applications (2022)
Rangel, Ricardo Cardoso; Sasaki, Kátia Regina Akemi ; Martino, João Antonio
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assuntos: TRANSISTORES, SENSOR, CIRCUITOS INTEGRADOS MOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RANGEL, Ricardo Cardoso e SASAKI, Kátia Regina Akemi e MARTINO, João Antonio. Reconfigurable SOI-MOSFET: past, present and future applications. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-9, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.626. Acesso em: 15 nov. 2025.
APA
Rangel, R. C., Sasaki, K. R. A., & Martino, J. A. (2022). Reconfigurable SOI-MOSFET: past, present and future applications. Journal of Integrated Circuits and Systems, 17( 2), 1-9. doi:10.29292/jics.v17i2.626
NLM
Rangel RC, Sasaki KRA, Martino JA. Reconfigurable SOI-MOSFET: past, present and future applications [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-9.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.626
Vancouver
Rangel RC, Sasaki KRA, Martino JA. Reconfigurable SOI-MOSFET: past, present and future applications [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-9.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.626
Artigo de periodico
Tunnel-FET evolution and applications for analog circuits (2022)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita ; Claeys, Cor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assuntos: TRANSISTORES, SENSOR, CIRCUITOS ANALÓGICOS, CIRCUITOS DIGITAIS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-7, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.631. Acesso em: 15 nov. 2025.
APA
Agopian, P. G. D., Martino, J. A., Simoen, E., Rooyackers, R., & Claeys, C. (2022). Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, 17( 2), 1-7. doi:10.29292/jics.v17i2.631
NLM
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Vancouver
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Artigo de periodico
Performance perspective of gate-all-around double nanosheet CMOS beyond high-speed logic applications (2022)
Simoen, Eddy ; Coelho, Carlos Henrique Santos; Silva, Vanessa Cristina Pereira da; Martino, João Antonio ; Agopian, Paula Ghedini Der ; Oliveira, Alberto; Cretu, Bogdan; Veloso, Anabela
Fonte: Journal of Integrated Circuits and Systems. Unidades: EP, EESC
Assuntos: TRANSISTORES, NANOELETRÔNICA, TEMPERATURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy et al. Performance perspective of gate-all-around double nanosheet CMOS beyond high-speed logic applications. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-9, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.617. Acesso em: 15 nov. 2025.
APA
Simoen, E., Coelho, C. H. S., Silva, V. C. P. da, Martino, J. A., Agopian, P. G. D., Oliveira, A., et al. (2022). Performance perspective of gate-all-around double nanosheet CMOS beyond high-speed logic applications. Journal of Integrated Circuits and Systems, 17( 2), 1-9. doi:10.29292/jics.v17i2.617
NLM
Simoen E, Coelho CHS, Silva VCP da, Martino JA, Agopian PGD, Oliveira A, Cretu B, Veloso A. Performance perspective of gate-all-around double nanosheet CMOS beyond high-speed logic applications [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-9.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.617
Vancouver
Simoen E, Coelho CHS, Silva VCP da, Martino JA, Agopian PGD, Oliveira A, Cretu B, Veloso A. Performance perspective of gate-all-around double nanosheet CMOS beyond high-speed logic applications [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-9.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.617
Artigo de periodico
Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C (2022)
Silva, Vanessa Cristina Pereira da; Leal, João Vitor da Costa; Perina, Welder F; Martino, João Antonio ; Simoen, Eddy ; Veloso, A; Agopian, Paula Ghedini Der
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assuntos: TRANSISTORES, NANOTECNOLOGIA, BAIXA TEMPERATURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Vanessa Cristina Pereira da et al. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C. Journal of Integrated Circuits and Systems, v. 17, n. 1, p. 1-6, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17il.550. Acesso em: 15 nov. 2025.
APA
Silva, V. C. P. da, Leal, J. V. da C., Perina, W. F., Martino, J. A., Simoen, E., Veloso, A., & Agopian, P. G. D. (2022). Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C. Journal of Integrated Circuits and Systems, 17( 1), 1-6. doi:10.29292/jics.v17i1.550
NLM
Silva VCP da, Leal JV da C, Perina WF, Martino JA, Simoen E, Veloso A, Agopian PGD. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C [Internet]. Journal of Integrated Circuits and Systems. 2022 ;17( 1): 1-6.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17il.550
Vancouver
Silva VCP da, Leal JV da C, Perina WF, Martino JA, Simoen E, Veloso A, Agopian PGD. Experimental analysis of trade-off between transistor efficiency and unit gain frequency of nanosheet NMOSFET down to -100°C [Internet]. Journal of Integrated Circuits and Systems. 2022 ;17( 1): 1-6.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17il.550
Artigo de periodico
Organic Dielectric Films for Flexible Transistors as Gas Sensors (2020)
García, Dennis Cabrera; Eirez Izquierdo, José Enrique ; Cavallari, Marco Roberto ; Quivy, Alain André; Fonseca, Fernando Josepetti
Fonte: Journal of Integrated Circuits and Systems. Unidades: IF, EP
Assuntos: ÓPTICA ELETRÔNICA, TRANSISTORES, POLÍMEROS (MATERIAIS), FILMES FINOS, CAPACITORES, DIELÉTRICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GARCÍA, Dennis Cabrera et al. Organic Dielectric Films for Flexible Transistors as Gas Sensors. Journal of Integrated Circuits and Systems, v. 15, n. 2, 2020Tradução . . Disponível em: https://doi.org/10.29292/jics.v15i2.170. Acesso em: 15 nov. 2025.
APA
García, D. C., Eirez Izquierdo, J. E., Cavallari, M. R., Quivy, A. A., & Fonseca, F. J. (2020). Organic Dielectric Films for Flexible Transistors as Gas Sensors. Journal of Integrated Circuits and Systems, 15( 2). doi:10.29292/jics.v15i2.170
NLM
García DC, Eirez Izquierdo JE, Cavallari MR, Quivy AA, Fonseca FJ. Organic Dielectric Films for Flexible Transistors as Gas Sensors [Internet]. Journal of Integrated Circuits and Systems. 2020 ; 15( 2):[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v15i2.170
Vancouver
García DC, Eirez Izquierdo JE, Cavallari MR, Quivy AA, Fonseca FJ. Organic Dielectric Films for Flexible Transistors as Gas Sensors [Internet]. Journal of Integrated Circuits and Systems. 2020 ; 15( 2):[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v15i2.170
Artigo de periodico
Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex (2015)
Santos, Gerson; Cavallari, Marco Roberto ; Pereira, Luiz; Fonseca, Fernando Josepetti
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assuntos: TRANSISTORES, DIODOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Gerson et al. Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex. Journal of Integrated Circuits and Systems, v. 10, n. 1, p. 7-12, 2015Tradução . . Disponível em: https://www.sbmicro.org.br/jics/html/artigos/vol10no1/1.pdf. Acesso em: 15 nov. 2025.
APA
Santos, G., Cavallari, M. R., Pereira, L., & Fonseca, F. J. (2015). Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex. Journal of Integrated Circuits and Systems, 10( 1), 7-12. Recuperado de https://www.sbmicro.org.br/jics/html/artigos/vol10no1/1.pdf
NLM
Santos G, Cavallari MR, Pereira L, Fonseca FJ. Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex [Internet]. Journal of Integrated Circuits and Systems. 2015 ; 10( 1): 7-12.[citado 2025 nov. 15 ] Available from: https://www.sbmicro.org.br/jics/html/artigos/vol10no1/1.pdf
Vancouver
Santos G, Cavallari MR, Pereira L, Fonseca FJ. Oxygen Plasma Surface Treatment onto ITO Surface for OLEDs Based on Europium Complex [Internet]. Journal of Integrated Circuits and Systems. 2015 ; 10( 1): 7-12.[citado 2025 nov. 15 ] Available from: https://www.sbmicro.org.br/jics/html/artigos/vol10no1/1.pdf
Artigo de periodico
PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors (2010)
Cavallari, Marco Roberto ; Albertin, Katia Franklin ; Santos, Gerson dos; Ramos, Carlos Alberto Santos; Pereyra, Inés ; Fonseca, Fernando Josepetti ; Andrade, Adnei Melges de
Fonte: Journal of Integrated Circuits and Systems. Unidades: EP, IEE
Assuntos: TRANSISTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAVALLARI, Marco Roberto et al. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 116-124, 2010Tradução . . Acesso em: 15 nov. 2025.
APA
Cavallari, M. R., Albertin, K. F., Santos, G. dos, Ramos, C. A. S., Pereyra, I., Fonseca, F. J., & Andrade, A. M. de. (2010). PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems, 5( 2), 116-124.
NLM
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 116-124.[citado 2025 nov. 15 ]
Vancouver
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 116-124.[citado 2025 nov. 15 ]
Artigo de periodico
Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs (2010)
Santos, Sara Dereste dos; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Sara Dereste dos et al. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 154-159, 2010Tradução . . Disponível em: https://doi.org/10.29292/jics.v5i2.322. Acesso em: 15 nov. 2025.
APA
Santos, S. D. dos, Martino, J. A., Simoen, E., & Claeys, C. (2010). Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs. Journal of Integrated Circuits and Systems, 5( 2), 154-159. doi:10.29292/jics.v5i2.322
NLM
Santos SD dos, Martino JA, Simoen E, Claeys C. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 154-159.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.322
Vancouver
Santos SD dos, Martino JA, Simoen E, Claeys C. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 154-159.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.322
Artigo de periodico
Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs (2010)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor ; Rooyackers, Rita; Collaert, Nadine
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 168-173, 2010Tradução . . Disponível em: https://doi.org/10.29292/jics.v5i2.324. Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C., Rooyackers, R., & Collaert, N. (2010). Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, 5( 2), 168-173. doi:10.29292/jics.v5i2.324
NLM
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.324
Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.324

Unidades USP

ReP

Filtros

Autores

Autores USP

Assuntos

Agência de fomento

Afiliação dos autores externos não normalizada