ReP USP - Resultado da busca

Trabalho de evento
Mach-zehnder interferometer simulation results for integrated optical pressure sensor (2001)
Siarkowski, Acácio Luiz; Bulla, Douglas Anderson Pereira; Morimoto, Nilton Itiro
Source: SBMicro 2001: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Subjects: CIRCUITOS INTEGRADOS, DISPOSITIVOS ELETRÔNICOS
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ABNT
SIARKOWSKI, Acácio Luiz e BULLA, Douglas Anderson Pereira e MORIMOTO, Nilton Itiro. Mach-zehnder interferometer simulation results for integrated optical pressure sensor. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 15 nov. 2025.
APA
Siarkowski, A. L., Bulla, D. A. P., & Morimoto, N. I. (2001). Mach-zehnder interferometer simulation results for integrated optical pressure sensor. In SBMicro 2001: proceedings. Brasília: SBMicro.
NLM
Siarkowski AL, Bulla DAP, Morimoto NI. Mach-zehnder interferometer simulation results for integrated optical pressure sensor. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]
Vancouver
Siarkowski AL, Bulla DAP, Morimoto NI. Mach-zehnder interferometer simulation results for integrated optical pressure sensor. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]
Trabalho de evento
The influence of process parameters on the electrical bahavior of silicon oxide thin films deposited by PECVD-TEOS (2001)
Silva, Ana Neilde Rodrigues da; Morimoto, Nilton Itiro ; Bonnaud, Olivier
Source: SBMicro 2001: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
SILVA, Ana Neilde Rodrigues da e MORIMOTO, Nilton Itiro e BONNAUD, Olivier. The influence of process parameters on the electrical bahavior of silicon oxide thin films deposited by PECVD-TEOS. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 15 nov. 2025.
APA
Silva, A. N. R. da, Morimoto, N. I., & Bonnaud, O. (2001). The influence of process parameters on the electrical bahavior of silicon oxide thin films deposited by PECVD-TEOS. In SBMicro 2001: proceedings. Brasília: SBMicro.
NLM
Silva ANR da, Morimoto NI, Bonnaud O. The influence of process parameters on the electrical bahavior of silicon oxide thin films deposited by PECVD-TEOS. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]
Vancouver
Silva ANR da, Morimoto NI, Bonnaud O. The influence of process parameters on the electrical bahavior of silicon oxide thin films deposited by PECVD-TEOS. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]
Trabalho de evento
Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques (2001)
Gautier, Gael; Crand, Samuel; Bonnaud, Olivier; Viana, Carlos Eduardo; Morimoto, Nilton Itiro
Source: SBMicro 2001: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
GAUTIER, Gael et al. Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 15 nov. 2025.
APA
Gautier, G., Crand, S., Bonnaud, O., Viana, C. E., & Morimoto, N. I. (2001). Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. In SBMicro 2001: proceedings. Brasília: SBMicro.
NLM
Gautier G, Crand S, Bonnaud O, Viana CE, Morimoto NI. Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]
Vancouver
Gautier G, Crand S, Bonnaud O, Viana CE, Morimoto NI. Development of a low temperature N and P type fabrication process by LPCVD and SPC techniques. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]
Trabalho de evento
SIPOS thin films deposition process for power devices passivation (2000)
Ferreira, Eduardo dos Santos; Morimoto, Nilton Itiro ; Marzano, Wanderley
Source: SBMicro 2000 : proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
FERREIRA, Eduardo dos Santos e MORIMOTO, Nilton Itiro e MARZANO, Wanderley. SIPOS thin films deposition process for power devices passivation. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 15 nov. 2025.
APA
Ferreira, E. dos S., Morimoto, N. I., & Marzano, W. (2000). SIPOS thin films deposition process for power devices passivation. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Ferreira E dos S, Morimoto NI, Marzano W. SIPOS thin films deposition process for power devices passivation. SBMicro 2000 : proceedings. 2000 ;[citado 2025 nov. 15 ]
Vancouver
Ferreira E dos S, Morimoto NI, Marzano W. SIPOS thin films deposition process for power devices passivation. SBMicro 2000 : proceedings. 2000 ;[citado 2025 nov. 15 ]
Trabalho de evento
Analysis of TEOS+O2 plasma - the influence of energy and gas flow on the deposition process (2000)
Silva, Ana Neilde Rodrigues da; Silva, Maria Lucia Pereira da; Morimoto, Nilton Itiro ; Bonnaud, Olivier
Source: SBMicro 2000: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
SILVA, Ana Neilde Rodrigues da et al. Analysis of TEOS+O2 plasma - the influence of energy and gas flow on the deposition process. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 15 nov. 2025.
APA
Silva, A. N. R. da, Silva, M. L. P. da, Morimoto, N. I., & Bonnaud, O. (2000). Analysis of TEOS+O2 plasma - the influence of energy and gas flow on the deposition process. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Silva ANR da, Silva MLP da, Morimoto NI, Bonnaud O. Analysis of TEOS+O2 plasma - the influence of energy and gas flow on the deposition process. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 15 ]
Vancouver
Silva ANR da, Silva MLP da, Morimoto NI, Bonnaud O. Analysis of TEOS+O2 plasma - the influence of energy and gas flow on the deposition process. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 15 ]
Trabalho de evento
Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices application. (em CD-Rom) (1997)
Bulla, Douglas Anderson Pereira; Morimoto, Nilton Itiro
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Subjects: CIRCUITOS INTEGRADOS, SEMICONDUTORES
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ABNT
BULLA, Douglas Anderson Pereira e MORIMOTO, Nilton Itiro. Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices application. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 15 nov. 2025.
APA
Bulla, D. A. P., & Morimoto, N. I. (1997). Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices application. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI.
NLM
Bulla DAP, Morimoto NI. Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices application. (em CD-Rom). Proceedings. 1997 ;[citado 2025 nov. 15 ]
Vancouver
Bulla DAP, Morimoto NI. Method to obtain TEOS PECVD silicon oxide thick layers for optoelectronics devices application. (em CD-Rom). Proceedings. 1997 ;[citado 2025 nov. 15 ]
Trabalho de evento
PECVD SiO2 sacrificial layers for fabrication of free-standing polysilicon filaments. (em CD-Rom) (1997)
Simões, Eliphas Wagner; Furlan, Rogério ; Morimoto, Nilton Itiro ; Bonnaud, Olivier; Silva, Ana Neilde Rodrigues da; Silva, Maria Lucia Pereira da
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Subjects: CIRCUITOS INTEGRADOS, SEMICONDUTORES
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ABNT
SIMÕES, Eliphas Wagner et al. PECVD SiO2 sacrificial layers for fabrication of free-standing polysilicon filaments. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 15 nov. 2025.
APA
Simões, E. W., Furlan, R., Morimoto, N. I., Bonnaud, O., Silva, A. N. R. da, & Silva, M. L. P. da. (1997). PECVD SiO2 sacrificial layers for fabrication of free-standing polysilicon filaments. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI.
NLM
Simões EW, Furlan R, Morimoto NI, Bonnaud O, Silva ANR da, Silva MLP da. PECVD SiO2 sacrificial layers for fabrication of free-standing polysilicon filaments. (em CD-Rom). Proceedings. 1997 ;[citado 2025 nov. 15 ]
Vancouver
Simões EW, Furlan R, Morimoto NI, Bonnaud O, Silva ANR da, Silva MLP da. PECVD SiO2 sacrificial layers for fabrication of free-standing polysilicon filaments. (em CD-Rom). Proceedings. 1997 ;[citado 2025 nov. 15 ]
Trabalho de evento
Fabrication process of free-standing polysilicon microfilaments using PECVD silicon oxide as a sacrificial layer (1997)
Simões, Eliphas Wagner; Furlan, Rogério ; Morimoto, Nilton Itiro ; Bonnaud, Olivier; Silva, Ana Neilde Rodrigues da
Source: Micromechanics Europe 97 : technical digest. Conference titles: Workshop on Micromachines, Micromechanics & Microsyems. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
SIMÕES, Eliphas Wagner et al. Fabrication process of free-standing polysilicon microfilaments using PECVD silicon oxide as a sacrificial layer. 1997, Anais.. Southampton: University of Southampton, 1997. . Acesso em: 15 nov. 2025.
APA
Simões, E. W., Furlan, R., Morimoto, N. I., Bonnaud, O., & Silva, A. N. R. da. (1997). Fabrication process of free-standing polysilicon microfilaments using PECVD silicon oxide as a sacrificial layer. In Micromechanics Europe 97 : technical digest. Southampton: University of Southampton.
NLM
Simões EW, Furlan R, Morimoto NI, Bonnaud O, Silva ANR da. Fabrication process of free-standing polysilicon microfilaments using PECVD silicon oxide as a sacrificial layer. Micromechanics Europe 97 : technical digest. 1997 ;[citado 2025 nov. 15 ]
Vancouver
Simões EW, Furlan R, Morimoto NI, Bonnaud O, Silva ANR da. Fabrication process of free-standing polysilicon microfilaments using PECVD silicon oxide as a sacrificial layer. Micromechanics Europe 97 : technical digest. 1997 ;[citado 2025 nov. 15 ]
Trabalho de evento
Pecvd teos silicon oxide deposited in a home made cluster tool system (1995)
Morimoto, Nilton Itiro ; Swart, Jacobus Willibrordus; Yoshihiro, F M
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
MORIMOTO, Nilton Itiro e SWART, Jacobus Willibrordus e YOSHIHIRO, F M. Pecvd teos silicon oxide deposited in a home made cluster tool system. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 15 nov. 2025.
APA
Morimoto, N. I., Swart, J. W., & Yoshihiro, F. M. (1995). Pecvd teos silicon oxide deposited in a home made cluster tool system. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Morimoto NI, Swart JW, Yoshihiro FM. Pecvd teos silicon oxide deposited in a home made cluster tool system. Proceedings. 1995 ;[citado 2025 nov. 15 ]
Vancouver
Morimoto NI, Swart JW, Yoshihiro FM. Pecvd teos silicon oxide deposited in a home made cluster tool system. Proceedings. 1995 ;[citado 2025 nov. 15 ]
Trabalho de evento
Cluster tool system for silicon oxide deposition (1995)
Morimoto, Nilton Itiro ; Swart, Jacobus Willibrordus
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
MORIMOTO, Nilton Itiro e SWART, Jacobus Willibrordus. Cluster tool system for silicon oxide deposition. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 15 nov. 2025.
APA
Morimoto, N. I., & Swart, J. W. (1995). Cluster tool system for silicon oxide deposition. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Morimoto NI, Swart JW. Cluster tool system for silicon oxide deposition. Proceedings. 1995 ;[citado 2025 nov. 15 ]
Vancouver
Morimoto NI, Swart JW. Cluster tool system for silicon oxide deposition. Proceedings. 1995 ;[citado 2025 nov. 15 ]
Trabalho de evento
Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors (1995)
Salaun, A C; Fortin, B; Bonnaud, Olivier; Morimoto, Nilton Itiro ; Kis-Sion, K; Lhermite, H; Le Bihan, F
Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
SALAUN, A C et al. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 15 nov. 2025.
APA
Salaun, A. C., Fortin, B., Bonnaud, O., Morimoto, N. I., Kis-Sion, K., Lhermite, H., & Le Bihan, F. (1995). Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.
NLM
Salaun AC, Fortin B, Bonnaud O, Morimoto NI, Kis-Sion K, Lhermite H, Le Bihan F. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. Proceedings. 1995 ;[citado 2025 nov. 15 ]
Vancouver
Salaun AC, Fortin B, Bonnaud O, Morimoto NI, Kis-Sion K, Lhermite H, Le Bihan F. Insulator / polysilicon interface: technological electrical and modelling aspects. Application to thin film transistors. Proceedings. 1995 ;[citado 2025 nov. 15 ]
Artigo de periodico
Analysis of the mean crystallite size and microstress in titanium silicide thin films (1992)
Morimoto, Nilton Itiro ; Swart, Jacobus Willibrordus; Riella, Humberto Gracher
Source: Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
MORIMOTO, Nilton Itiro e SWART, Jacobus Willibrordus e RIELLA, Humberto Gracher. Analysis of the mean crystallite size and microstress in titanium silicide thin films. Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena, v. 10, n. 2 , p. 586-90, 1992Tradução . . Disponível em: https://doi.org/10.1016/0169-4332(89)90517-5. Acesso em: 15 nov. 2025.
APA
Morimoto, N. I., Swart, J. W., & Riella, H. G. (1992). Analysis of the mean crystallite size and microstress in titanium silicide thin films. Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena, 10( 2 ), 586-90. doi:10.1016/0169-4332(89)90517-5
NLM
Morimoto NI, Swart JW, Riella HG. Analysis of the mean crystallite size and microstress in titanium silicide thin films [Internet]. Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena. 1992 ;10( 2 ): 586-90.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0169-4332(89)90517-5
Vancouver
Morimoto NI, Swart JW, Riella HG. Analysis of the mean crystallite size and microstress in titanium silicide thin films [Internet]. Journal of Vacuum Science and Technology. B. Microelectronics Processing and Phenomena. 1992 ;10( 2 ): 586-90.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0169-4332(89)90517-5

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