ReP USP - Resultado da busca

Parte de monografia/livro
Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications (2002)
Santos, R.E.; Doi, Ioshiaki; Diniz, J. A.; Swart, Jacobus Willibrordus; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SANTOS, R.E. et al. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Santos, R. E., Doi, I., Diniz, J. A., Swart, J. W., & Santos Filho, S. G. dos. (2002). Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Santos RE, Doi I, Diniz JA, Swart JW, Santos Filho SG dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Santos RE, Doi I, Diniz JA, Swart JW, Santos Filho SG dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Porous silicon sacrifical layers applied on micromechanical structures fabrication (2002)
Dantas, Michel Oliveira da Silva; Galeazzo, Elisabete ; Peres, Henrique Estanislau Maldonado ; Ramírez Fernandez, Francisco Javier
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
DANTAS, Michel Oliveira da Silva et al. Porous silicon sacrifical layers applied on micromechanical structures fabrication. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., & Ramírez Fernandez, F. J. (2002). Porous silicon sacrifical layers applied on micromechanical structures fabrication. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Porous silicon sacrifical layers applied on micromechanical structures fabrication. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Ramírez Fernandez FJ. Porous silicon sacrifical layers applied on micromechanical structures fabrication. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes (2002)
Navia, Alan Rodrigo; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NAVIA, Alan Rodrigo e SANTOS FILHO, Sebastião Gomes dos. Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Navia, A. R., & Santos Filho, S. G. dos. (2002). Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Navia AR, Santos Filho SG dos. Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Navia AR, Santos Filho SG dos. Electrical and physical characterization of electroless nickel films on polysilicon gate electrodes. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Formation of nickel monosilicide onto (100) silicon wafer surfaces (2002)
Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos ; Laganá, Armando Antonio Maria ; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
REIS, Ronaldo Willian et al. Formation of nickel monosilicide onto (100) silicon wafer surfaces. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Reis, R. W., Santos Filho, S. G. dos, Laganá, A. A. M., Doi, I., & Swart, J. W. (2002). Formation of nickel monosilicide onto (100) silicon wafer surfaces. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Reis RW, Santos Filho SG dos, Laganá AAM, Doi I, Swart JW. Formation of nickel monosilicide onto (100) silicon wafer surfaces. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Reis RW, Santos Filho SG dos, Laganá AAM, Doi I, Swart JW. Formation of nickel monosilicide onto (100) silicon wafer surfaces. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Polarization-difference imaging technique for material characterization: algorithm and some applications (2002)
Araújo, Hugo Puertas de; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ARAÚJO, Hugo Puertas de e SANTOS FILHO, Sebastião Gomes dos. Polarization-difference imaging technique for material characterization: algorithm and some applications. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Araújo, H. P. de, & Santos Filho, S. G. dos. (2002). Polarization-difference imaging technique for material characterization: algorithm and some applications. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Araújo HP de, Santos Filho SG dos. Polarization-difference imaging technique for material characterization: algorithm and some applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Araújo HP de, Santos Filho SG dos. Polarization-difference imaging technique for material characterization: algorithm and some applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Effect of stencil alignment on the solder beading in SMT process (2002)
Silva, Flávio Sousa; Oka, Mauricio Massazumi
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002, Porto Alegre, 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SILVA, Flávio Sousa e OKA, Mauricio Massazumi. Effect of stencil alignment on the solder beading in SMT process. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Silva, F. S., & Oka, M. M. (2002). Effect of stencil alignment on the solder beading in SMT process. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Silva FS, Oka MM. Effect of stencil alignment on the solder beading in SMT process. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Silva FS, Oka MM. Effect of stencil alignment on the solder beading in SMT process. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor (2002)
Sonnenberg, Victor ; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Sonnenberg, V., & Martino, J. A. (2002). Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Sonnenberg V, Martino JA. Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Characterization of SF6 plasmas by RF electrical measurements (2002)
Pisani, Marcelo Bento; Verdonck, Patrick Bernard
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PISANI, Marcelo Bento e VERDONCK, Patrick Bernard. Characterization of SF6 plasmas by RF electrical measurements. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Pisani, M. B., & Verdonck, P. B. (2002). Characterization of SF6 plasmas by RF electrical measurements. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pisani MB, Verdonck PB. Characterization of SF6 plasmas by RF electrical measurements. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Pisani MB, Verdonck PB. Characterization of SF6 plasmas by RF electrical measurements. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Difference between kink and bipolar parasitic effects in thin film SOI MOSFET (2002)
Hoashi, Paulo Tetsuo; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
HOASHI, Paulo Tetsuo e MARTINO, João Antonio. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Hoashi, P. T., & Martino, J. A. (2002). Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Hoashi PT, Martino JA. Difference between kink and bipolar parasitic effects in thin film SOI MOSFET. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors (2002)
Gonçalves, Lucas Gonçalves Dias; Silva, Antônio Nélson Rodrigues da ; Alfano, C.F.; Santos, J. C.; Morimoto, Nilton Itiro
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002, Porto Alegre, 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GONÇALVES, Lucas Gonçalves Dias et al. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Gonçalves, L. G. D., Silva, A. N. R. da, Alfano, C. F., Santos, J. C., & Morimoto, N. I. (2002). Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Gonçalves LGD, Silva ANR da, Alfano CF, Santos JC, Morimoto NI. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Gonçalves LGD, Silva ANR da, Alfano CF, Santos JC, Morimoto NI. Mechanical properties of silicon oxide films deposited by PECVD-TEOS for application in MEMS structures and sensors. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K (2002)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Mercha, A.; Rafi, J.M.; Simoen, Eddy ; Claeys, Cor ; Van Meer, H.; De Meyer, K.
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Mercha, A., Rafi, J. M., Simoen, E., Claeys, C., et al. (2002). Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Comparison between 0.13µm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
The leakage current composition in thin film SOI NMOSFETS at high temperatures (2002)
Bellodi, Marcello; Martino, João Antonio
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
BELLODI, Marcello e MARTINO, João Antonio. The leakage current composition in thin film SOI NMOSFETS at high temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2002). The leakage current composition in thin film SOI NMOSFETS at high temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Bellodi M, Martino JA. The leakage current composition in thin film SOI NMOSFETS at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures (2002)
Páez Carreño, Marcelo Nelson ; Lopes, Alexandre Tavares; Alayo Chávez, Marco Isaías ; Pereyra, Inés
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PÁEZ CARREÑO, Marcelo Nelson et al. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Páez Carreño, M. N., Lopes, A. T., Alayo Chávez, M. I., & Pereyra, I. (2002). 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Phosphorus implantation on near stoichiometric a-SIC:H films (2002)
Oliveira, A. R.; Paez Carreño, Marcelo Nelson
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
OLIVEIRA, A. R. e PAEZ CARREÑO, Marcelo Nelson. Phosphorus implantation on near stoichiometric a-SIC:H films. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Oliveira, A. R., & Paez Carreño, M. N. (2002). Phosphorus implantation on near stoichiometric a-SIC:H films. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Oliveira AR, Paez Carreño MN. Phosphorus implantation on near stoichiometric a-SIC:H films. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Oliveira AR, Paez Carreño MN. Phosphorus implantation on near stoichiometric a-SIC:H films. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Highly conductive n-type MC-Si:H films deposited at very low temperature (2002)
Nardes, Alexandre Mantovani; Dirani, Ely Antonio Tadeu ; Andrade, Adnei Melges de ; Fonseca, Fernando Josepetti
Source: Microelectronics Technology and Devices SBMICRO 2002. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NARDES, Alexandre Mantovani et al. Highly conductive n-type MC-Si:H films deposited at very low temperature. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Nardes, A. M., Dirani, E. A. T., Andrade, A. M. de, & Fonseca, F. J. (2002). Highly conductive n-type MC-Si:H films deposited at very low temperature. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nardes AM, Dirani EAT, Andrade AM de, Fonseca FJ. Highly conductive n-type MC-Si:H films deposited at very low temperature. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Nardes AM, Dirani EAT, Andrade AM de, Fonseca FJ. Highly conductive n-type MC-Si:H films deposited at very low temperature. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Diluted HNO3/HF as a final pre-oxidation cleaning step for MOS devices (2002)
Nogueira, Willian Aurélio; Toquetti, Leandro Zeidan; Santos Filho, Sebastião Gomes dos
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NOGUEIRA, Willian Aurélio e TOQUETTI, Leandro Zeidan e SANTOS FILHO, Sebastião Gomes dos. Diluted HNO3/HF as a final pre-oxidation cleaning step for MOS devices. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Nogueira, W. A., Toquetti, L. Z., & Santos Filho, S. G. dos. (2002). Diluted HNO3/HF as a final pre-oxidation cleaning step for MOS devices. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Nogueira WA, Toquetti LZ, Santos Filho SG dos. Diluted HNO3/HF as a final pre-oxidation cleaning step for MOS devices. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Nogueira WA, Toquetti LZ, Santos Filho SG dos. Diluted HNO3/HF as a final pre-oxidation cleaning step for MOS devices. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Parte de monografia/livro
Fabrication of PMMA microlenses using a micromachined silicon moud (2002)
Cirino, Giuseppe Antonio; Arruda, Antonio C.; Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard; Gonçalves Neto, Luiz
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidades: EP, EESC
Assunto: MICROELETRÔNICA
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ABNT
CIRINO, Giuseppe Antonio et al. Fabrication of PMMA microlenses using a micromachined silicon moud. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 20 nov. 2025.
APA
Cirino, G. A., Arruda, A. C., Mansano, R. D., Verdonck, P. B., & Gonçalves Neto, L. (2002). Fabrication of PMMA microlenses using a micromachined silicon moud. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Cirino GA, Arruda AC, Mansano RD, Verdonck PB, Gonçalves Neto L. Fabrication of PMMA microlenses using a micromachined silicon moud. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]
Vancouver
Cirino GA, Arruda AC, Mansano RD, Verdonck PB, Gonçalves Neto L. Fabrication of PMMA microlenses using a micromachined silicon moud. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 20 ]

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