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Artigo de periodico
Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View (2015)
Sasaki, Kátia Regina Akemi; Aoulaiche, Marc; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: J. Low Power Electron. Appl. 2015, 5(2), 69-80. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SASAKI, Kátia Regina Akemi et al. Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View. J. Low Power Electron. Appl. 2015, 5(2), 69-80, v. 5, n. 2, p. 69-80, 2015Tradução . . Disponível em: https://doi.org/10.3390/jlpea5020069. Acesso em: 10 out. 2024.
APA
Sasaki, K. R. A., Aoulaiche, M., Simoen, E., Claeys, C., & Martino, J. A. (2015). Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View. J. Low Power Electron. Appl. 2015, 5(2), 69-80, 5( 2), 69-80. doi:10.3390/jlpea5020069
NLM
Sasaki KRA, Aoulaiche M, Simoen E, Claeys C, Martino JA. Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View [Internet]. J. Low Power Electron. Appl. 2015, 5(2), 69-80. 2015 ; 5( 2): 69-80.[citado 2024 out. 10 ] Available from: https://doi.org/10.3390/jlpea5020069
Vancouver
Sasaki KRA, Aoulaiche M, Simoen E, Claeys C, Martino JA. Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View [Internet]. J. Low Power Electron. Appl. 2015, 5(2), 69-80. 2015 ; 5( 2): 69-80.[citado 2024 out. 10 ] Available from: https://doi.org/10.3390/jlpea5020069
Artigo de periodico
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation (2014)
Caño de Andrade, Maria Glória; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Aoulaiche, Marc; Martino, João Antonio
Source: Microelectronics Reliability. Unidade: EP
Subjects: SILÍCIO, MICROELETRÔNICA
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ABNT
CAÑO DE ANDRADE, Maria Glória et al. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, v. 54, n. 11, p. 2349-2354, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2014.06.013. Acesso em: 10 out. 2024.
APA
Caño de Andrade, M. G., Collaert, N., Simoen, E., Claeys, C., Aoulaiche, M., & Martino, J. A. (2014). Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, 54( 11), 2349-2354. doi:10.1016/j.microrel.2014.06.013
NLM
Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013
Vancouver
Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013
Artigo de periodico
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation (2014)
Nicoletti, Talitha; Santos, Sara Dereste dos; Martino, João Antonio ; Aoulaiche, Marc; Veloso, Anabela; Claeys, Cor ; Simoen, Eddy ; Jurczak, Malgorzata
Source: Solid-State Electronics. Unidade: EP
Subjects: TEMPERATURA, MICROELETRÔNICA
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ABNT
NICOLETTI, Talitha et al. Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation. Solid-State Electronics, v. 91, p. 53-58, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2013.09.012. Acesso em: 10 out. 2024.
APA
Nicoletti, T., Santos, S. D. dos, Martino, J. A., Aoulaiche, M., Veloso, A., Claeys, C., et al. (2014). Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation. Solid-State Electronics, 91, 53-58. doi:10.1016/j.sse.2013.09.012
NLM
Nicoletti T, Santos SD dos, Martino JA, Aoulaiche M, Veloso A, Claeys C, Simoen E, Jurczak M. Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation [Internet]. Solid-State Electronics. 2014 ; 91 53-58.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/j.sse.2013.09.012
Vancouver
Nicoletti T, Santos SD dos, Martino JA, Aoulaiche M, Veloso A, Claeys C, Simoen E, Jurczak M. Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation [Internet]. Solid-State Electronics. 2014 ; 91 53-58.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/j.sse.2013.09.012
Artigo de periodico
Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results (2014)
Nissimoff, Albert; Claeys, Cor ; Aoulaiche, Marc; Sasaki, Karen Lucia Mayumi; Simoen, Eddy ; Martino, João Antonio
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NISSIMOFF, Albert et al. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 91-96, 2014Tradução . . Disponível em: https://doi.org/10.29292/jics.v9i2.393. Acesso em: 10 out. 2024.
APA
Nissimoff, A., Claeys, C., Aoulaiche, M., Sasaki, K. L. M., Simoen, E., & Martino, J. A. (2014). Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results. Journal of Integrated Circuits and Systems, 9( 2), 91-96. doi:10.29292/jics.v9i2.393
NLM
Nissimoff A, Claeys C, Aoulaiche M, Sasaki KLM, Simoen E, Martino JA. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 91-96.[citado 2024 out. 10 ] Available from: https://doi.org/10.29292/jics.v9i2.393
Vancouver
Nissimoff A, Claeys C, Aoulaiche M, Sasaki KLM, Simoen E, Martino JA. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 91-96.[citado 2024 out. 10 ] Available from: https://doi.org/10.29292/jics.v9i2.393
Artigo de periodico
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics (2014)
Santos, Sara Dereste dos; Martino, João Antonio ; Cretu, B; Strobel, V; Routoure, J.-M; Carin, R; Aoulaiche, Marc; Jurczak, Malgorzata; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Subjects: TEMPERATURA, MICROELETRÔNICA, SILÍCIO
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ABNT
SANTOS, Sara Dereste dos et al. Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics. Solid-State Electronics, v. 97, p. 14-22, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2014.04.034. Acesso em: 10 out. 2024.
APA
Santos, S. D. dos, Martino, J. A., Cretu, B., Strobel, V., Routoure, J. -M., Carin, R., et al. (2014). Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics. Solid-State Electronics, 97, 14-22. doi:10.1016/j.sse.2014.04.034
NLM
Santos SD dos, Martino JA, Cretu B, Strobel V, Routoure J-M, Carin R, Aoulaiche M, Jurczak M, Claeys C. Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics [Internet]. Solid-State Electronics. 2014 ; 97 14-22.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/j.sse.2014.04.034
Vancouver
Santos SD dos, Martino JA, Cretu B, Strobel V, Routoure J-M, Carin R, Aoulaiche M, Jurczak M, Claeys C. Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics [Internet]. Solid-State Electronics. 2014 ; 97 14-22.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/j.sse.2014.04.034
Trabalho de evento
On the variability of the low-frequency noise in UTBOX SOI nMOSFETs (2012)
Simoen, Eddy ; Caño de Andrade, Maria Glória ; Almeida, Luciano Mendes; Aoulaiche, Marc; Caillat, Christian; Jurczak, Malgorzata; Claeys, Cor
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy et al. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0051ecst. Acesso em: 10 out. 2024.
APA
Simoen, E., Caño de Andrade, M. G., Almeida, L. M., Aoulaiche, M., Caillat, C., Jurczak, M., & Claeys, C. (2012). On the variability of the low-frequency noise in UTBOX SOI nMOSFETs. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0051ecst
NLM
Simoen E, Caño de Andrade MG, Almeida LM, Aoulaiche M, Caillat C, Jurczak M, Claeys C. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 10 ] Available from: https://doi.org/10.1149/04901.0051ecst
Vancouver
Simoen E, Caño de Andrade MG, Almeida LM, Aoulaiche M, Caillat C, Jurczak M, Claeys C. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 10 ] Available from: https://doi.org/10.1149/04901.0051ecst
Trabalho de evento
Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS (2012)
Santos, Sara Dereste dos ; Nicoletti, Talitha; Aoulaiche, Marc; Martino, João Antonio ; Veloso, A; Jurczak, Malgorzata; Simoen, Eddy ; Claeys, Cor
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Sara Dereste dos et al. Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://repositorio.usp.br/directbitstream/22d2dffe-4364-4c9f-87ae-bbce2402e1e6/3144801.pdf. Acesso em: 10 out. 2024.
APA
Santos, S. D. dos, Nicoletti, T., Aoulaiche, M., Martino, J. A., Veloso, A., Jurczak, M., et al. (2012). Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. Recuperado de https://repositorio.usp.br/directbitstream/22d2dffe-4364-4c9f-87ae-bbce2402e1e6/3144801.pdf
NLM
Santos SD dos, Nicoletti T, Aoulaiche M, Martino JA, Veloso A, Jurczak M, Simoen E, Claeys C. Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 10 ] Available from: https://repositorio.usp.br/directbitstream/22d2dffe-4364-4c9f-87ae-bbce2402e1e6/3144801.pdf
Vancouver
Santos SD dos, Nicoletti T, Aoulaiche M, Martino JA, Veloso A, Jurczak M, Simoen E, Claeys C. Spacer length and tilt implantation influence on scaled UTBOX FD MOSFETS [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 10 ] Available from: https://repositorio.usp.br/directbitstream/22d2dffe-4364-4c9f-87ae-bbce2402e1e6/3144801.pdf
Trabalho de evento
UTBOX SOI devices with high-k gate dielectric under analog performance (2012)
Galeti, Milene; Rodrigues, Michele; Aoulaiche, Marc; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALETI, Milene et al. UTBOX SOI devices with high-k gate dielectric under analog performance. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0119ecst. Acesso em: 10 out. 2024.
APA
Galeti, M., Rodrigues, M., Aoulaiche, M., Collaert, N., Simoen, E., Claeys, C., & Martino, J. A. (2012). UTBOX SOI devices with high-k gate dielectric under analog performance. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0119ecst
NLM
Galeti M, Rodrigues M, Aoulaiche M, Collaert N, Simoen E, Claeys C, Martino JA. UTBOX SOI devices with high-k gate dielectric under analog performance [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 10 ] Available from: https://doi.org/10.1149/04901.0119ecst
Vancouver
Galeti M, Rodrigues M, Aoulaiche M, Collaert N, Simoen E, Claeys C, Martino JA. UTBOX SOI devices with high-k gate dielectric under analog performance [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 out. 10 ] Available from: https://doi.org/10.1149/04901.0119ecst

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