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Trabalho de evento-anais periodico
In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat (2007)
Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Marques, E B
Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, EPITAXIA POR FEIXE MOLECULAR
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ABNT
MARTINI, S et al. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal. Acesso em: 07 ago. 2024. , 2007
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Marques, E. B. (2007). In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
NLM
Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2024 ago. 07 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
Vancouver
Martini S, Quivy AA, Silva ECF da, Marques EB. In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat [Internet]. AIP Conference Proceedings. 2007 ; 893 17-18.[citado 2024 ago. 07 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000017000001&idtype=cvips&prog=normal
Artigo de periodico
Large InAs/GaAs quantum dots with an optical response in the long-wavelength region (2005)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, v. 278, p. 103-107, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2004.12.118. Acesso em: 07 ago. 2024.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2005). Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, 278, 103-107. doi:10.1016/j.jcrysgro.2004.12.118
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118
Artigo de periodico
Morphological and optical properties of p-type GaAs(001) layers doped with silicon (2003)
Lamas, T. E.; Martini, S; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
LAMAS, T. E. et al. Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, v. 34, n. 5-8, p. 701-703, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00106-x. Acesso em: 07 ago. 2024.
APA
Lamas, T. E., Martini, S., Silva, M. J. da, Quivy, A. A., & Leite, J. R. (2003). Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, 34( 5-8), 701-703. doi:10.1016/s0026-2692(03)00106-x
NLM
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Vancouver
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Trabalho de evento-resumo
Large InAs/GaAs quantum dots optically active in the long-wavelength region (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots optically active in the long-wavelength region. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 07 ago. 2024.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Large InAs/GaAs quantum dots optically active in the long-wavelength region. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2024 ago. 07 ]
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2024 ago. 07 ]
Artigo de periodico
Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy (2002)
Martini, S; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA
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ABNT
MARTINI, S et al. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, v. 81, n. 15, p. 2863-2865, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1513182. Acesso em: 07 ago. 2024.
APA
Martini, S., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2002). Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy. Applied Physics Letters, 81( 15), 2863-2865. doi:10.1063/1.1513182
NLM
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1063/1.1513182
Vancouver
Martini S, Quivy AA, Silva ECF da, Leite JR. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2863-2865.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1063/1.1513182
Artigo de periodico
In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy (2002)
Martini, S; Quivy, A. A.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES
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ABNT
MARTINI, S e QUIVY, A. A. In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy. Brazilian Journal of Physics, v. 32, n. 2A, p. 359-361, 2002Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332002000200031. Acesso em: 07 ago. 2024.
APA
Martini, S., & Quivy, A. A. (2002). In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy. Brazilian Journal of Physics, 32( 2A), 359-361. doi:10.1590/s0103-97332002000200031
NLM
Martini S, Quivy AA. In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 359-361.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1590/s0103-97332002000200031
Vancouver
Martini S, Quivy AA. In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy [Internet]. Brazilian Journal of Physics. 2002 ; 32( 2A): 359-361.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1590/s0103-97332002000200031
Artigo de periodico
Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates (2001)
Sales, F V de; Soler, M A G; Ugarte, D; Quivy, A. A.; Silva, S W da; Martini, S; Morais, P C
Source: Physica Status Solidi A - Applied Research. Unidade: IF
Subjects: SUPERFÍCIE FÍSICA, SEMICONDUTORES, ÓPTICA, ESPECTROSCOPIA ELETRÔNICA
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ABNT
SALES, F V de et al. Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates. Physica Status Solidi A - Applied Research, v. 187, n. 1, p. 253-256, 2001Tradução . . Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512456&PLACEBO=IE.pdf. Acesso em: 07 ago. 2024.
APA
Sales, F. V. de, Soler, M. A. G., Ugarte, D., Quivy, A. A., Silva, S. W. da, Martini, S., & Morais, P. C. (2001). Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates. Physica Status Solidi A - Applied Research, 187( 1), 253-256. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512456&PLACEBO=IE.pdf
NLM
Sales FV de, Soler MAG, Ugarte D, Quivy AA, Silva SW da, Martini S, Morais PC. Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates [Internet]. Physica Status Solidi A - Applied Research. 2001 ; 187( 1): 253-256.[citado 2024 ago. 07 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512456&PLACEBO=IE.pdf
Vancouver
Sales FV de, Soler MAG, Ugarte D, Quivy AA, Silva SW da, Martini S, Morais PC. Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substrates [Internet]. Physica Status Solidi A - Applied Research. 2001 ; 187( 1): 253-256.[citado 2024 ago. 07 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512456&PLACEBO=IE.pdf

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