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Trabalho de evento
Temperature influence on operational transconductance amplifier designed with triple gate TFET (2022)
Camargo, Raphael Gil; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: ANÁLISE TÉRMICA, AMPLIFICADORES
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ABNT
CAMARGO, Raphael Gil e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Temperature influence on operational transconductance amplifier designed with triple gate TFET. 2022, Anais.. Piscataway: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9880962. Acesso em: 11 nov. 2024.
APA
Camargo, R. G., Martino, J. A., & Agopian, P. G. D. (2022). Temperature influence on operational transconductance amplifier designed with triple gate TFET. In SBMICRO. Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9880962
NLM
Camargo RG, Martino JA, Agopian PGD. Temperature influence on operational transconductance amplifier designed with triple gate TFET [Internet]. SBMICRO. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9880962
Vancouver
Camargo RG, Martino JA, Agopian PGD. Temperature influence on operational transconductance amplifier designed with triple gate TFET [Internet]. SBMICRO. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9880962
Trabalho de evento
Nanowire TFET with different source compositions applied to low-dropout voltage regulator (2022)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, NANOELETRÔNICA, CIRCUITOS ANALÓGICOS
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ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Nanowire TFET with different source compositions applied to low-dropout voltage regulator. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881035. Acesso em: 11 nov. 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2022). Nanowire TFET with different source compositions applied to low-dropout voltage regulator. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881035
NLM
Toledo R do N, Martino JA, Agopian PGD. Nanowire TFET with different source compositions applied to low-dropout voltage regulator [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881035
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Nanowire TFET with different source compositions applied to low-dropout voltage regulator [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881035
Trabalho de evento
Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's (2022)
Ribeiro, Arllen D.R.; Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: MICROELETRÔNICA, SILÍCIO, INOVAÇÕES TECNOLÓGICAS
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ABNT
RIBEIRO, Arllen D.R. et al. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's. 2022, Anais.. Piscataway: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881005. Acesso em: 11 nov. 2024.
APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2022). Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's. In SBMICRO. Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881005
NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's [Internet]. SBMICRO. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881005
Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's [Internet]. SBMICRO. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881005
Trabalho de evento
Monte Carlo analysis of a fractional-order MOS capacitor using fractal tree implementation (2022)
Fernandes, Lucas Almir dos Santos; Alayo Chávez, Marco Isaías ; Martino, João Antonio
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: FRACTAIS, MÉTODO DE MONTE CARLO, SIMULAÇÃO
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ABNT
FERNANDES, Lucas Almir dos Santos e ALAYO CHÁVEZ, Marco Isaías e MARTINO, João Antonio. Monte Carlo analysis of a fractional-order MOS capacitor using fractal tree implementation. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881030. Acesso em: 11 nov. 2024.
APA
Fernandes, L. A. dos S., Alayo Chávez, M. I., & Martino, J. A. (2022). Monte Carlo analysis of a fractional-order MOS capacitor using fractal tree implementation. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881030
NLM
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Monte Carlo analysis of a fractional-order MOS capacitor using fractal tree implementation [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881030
Vancouver
Fernandes LA dos S, Alayo Chávez MI, Martino JA. Monte Carlo analysis of a fractional-order MOS capacitor using fractal tree implementation [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881030
Trabalho de evento
Experimental analysis of MISHEMT multiple conductions from 200K to 450K (2022)
Perina, Welder Fernandes; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, TEMPERATURA
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ABNT
PERINA, Welder Fernandes e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Experimental analysis of MISHEMT multiple conductions from 200K to 450K. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881049. Acesso em: 11 nov. 2024.
APA
Perina, W. F., Martino, J. A., & Agopian, P. G. D. (2022). Experimental analysis of MISHEMT multiple conductions from 200K to 450K. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881049
NLM
Perina WF, Martino JA, Agopian PGD. Experimental analysis of MISHEMT multiple conductions from 200K to 450K [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881049
Vancouver
Perina WF, Martino JA, Agopian PGD. Experimental analysis of MISHEMT multiple conductions from 200K to 450K [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881049
Trabalho de evento
Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET (2022)
Carvalho, Henrique Lanfredi; Rangel, Ricardo Cardoso; Sasaki, Kátia Regina Akemi ; Agopian, Paula Ghedini Der ; Yojo, Leonardo Shimizu; Martino, João Antonio
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, DISPOSITIVOS ELETRÔNICOS, ALUMÍNIO, NANOELETRÔNICA, CIRCUITOS ANALÓGICOS
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ABNT
CARVALHO, Henrique Lanfredi et al. Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9880960. Acesso em: 11 nov. 2024.
APA
Carvalho, H. L., Rangel, R. C., Sasaki, K. R. A., Agopian, P. G. D., Yojo, L. S., & Martino, J. A. (2022). Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9880960
NLM
Carvalho HL, Rangel RC, Sasaki KRA, Agopian PGD, Yojo LS, Martino JA. Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9880960
Vancouver
Carvalho HL, Rangel RC, Sasaki KRA, Agopian PGD, Yojo LS, Martino JA. Al source-drain schottky contact enabling N-type (Back Enhanced) BESOI MOSFET [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9880960
Trabalho de evento
Fabrication and electrical characterization of ISFET for H2O2 sensing (2022)
Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Ramos, Daniel Augusto; Yojo, Leonardo Shimizu; Mori, Carlos Augusto Bergfeld; Sasaki, Kátia Regina Akemi ; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: TRANSISTORES, PERÓXIDO DE HIDROGÊNIO
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ABNT
DUARTE, Pedro Henrique et al. Fabrication and electrical characterization of ISFET for H2O2 sensing. 2022, Anais.. Piscataway: IEEE, 2022. p. 1-4. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881031. Acesso em: 11 nov. 2024.
APA
Duarte, P. H., Rangel, R. C., Ramos, D. A., Yojo, L. S., Mori, C. A. B., Sasaki, K. R. A., et al. (2022). Fabrication and electrical characterization of ISFET for H2O2 sensing. In SBMICRO (p. 1-4). Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881031
NLM
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. Fabrication and electrical characterization of ISFET for H2O2 sensing [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881031
Vancouver
Duarte PH, Rangel RC, Ramos DA, Yojo LS, Mori CAB, Sasaki KRA, Agopian PGD, Martino JA. Fabrication and electrical characterization of ISFET for H2O2 sensing [Internet]. SBMICRO. 2022 ; 1-4.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881031

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