ReP USP - Resultado da busca

Artigo de periodico
Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate (2005)
Leite, J. R.; Scolfaro, Luisa Maria Ribeiro
Source: Journal of Crystal Growth. Unidade: IF
Subjects: MATÉRIA CONDENSADA, CRISTALOGRAFIA, FEIXES, CRESCIMENTO DE CRISTAIS, ESTRUTURA ELETRÔNICA
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ABNT
LEITE, J. R. e SCOLFARO, Luisa Maria Ribeiro. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2005.07.049. Acesso em: 18 out. 2024.
APA
Leite, J. R., & Scolfaro, L. M. R. (2005). Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, 284( 3-4), 379-387. doi:10.1016/j.jcrysgro.2005.07.049
NLM
Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049
Vancouver
Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049
Artigo de periodico
Crystal growth of congruent barium calcium titanate by LHPG (2001)
Barbosa, Luciara Benedita; Reyes Ardila, Diogenes; Andreeta, José Pedro
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, DIELÉTRICOS
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ABNT
BARBOSA, Luciara Benedita e REYES ARDILA, Diogenes e ANDREETA, José Pedro. Crystal growth of congruent barium calcium titanate by LHPG. Journal of Crystal Growth, v. 231, p. 488-492, 2001Tradução . . Disponível em: https://doi.org/10.1016/S0022-0248(01)01455-5. Acesso em: 18 out. 2024.
APA
Barbosa, L. B., Reyes Ardila, D., & Andreeta, J. P. (2001). Crystal growth of congruent barium calcium titanate by LHPG. Journal of Crystal Growth, 231, 488-492. doi:10.1016/S0022-0248(01)01455-5
NLM
Barbosa LB, Reyes Ardila D, Andreeta JP. Crystal growth of congruent barium calcium titanate by LHPG [Internet]. Journal of Crystal Growth. 2001 ;231 488-492.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/S0022-0248(01)01455-5
Vancouver
Barbosa LB, Reyes Ardila D, Andreeta JP. Crystal growth of congruent barium calcium titanate by LHPG [Internet]. Journal of Crystal Growth. 2001 ;231 488-492.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/S0022-0248(01)01455-5
Artigo de periodico
Growth of yttrium orthovanadate by LHPG in isostatic oxygen atmosphere (2001)
Reyes Ardila, Diógenes; de Camargo, Andrea Simone Stucchi ; Andreeta, José Pedro ; Nunes, Luiz Antônio de Oliveira
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, DIELÉTRICOS
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ABNT
REYES ARDILA, Diógenes et al. Growth of yttrium orthovanadate by LHPG in isostatic oxygen atmosphere. Journal of Crystal Growth, v. 233, p. 253-258, 2001Tradução . . Disponível em: https://doi.org/10.1016/S0022-0248(01)01561-5. Acesso em: 18 out. 2024.
APA
Reyes Ardila, D., de Camargo, A. S. S., Andreeta, J. P., & Nunes, L. A. de O. (2001). Growth of yttrium orthovanadate by LHPG in isostatic oxygen atmosphere. Journal of Crystal Growth, 233, 253-258. doi:10.1016/S0022-0248(01)01561-5
NLM
Reyes Ardila D, de Camargo ASS, Andreeta JP, Nunes LA de O. Growth of yttrium orthovanadate by LHPG in isostatic oxygen atmosphere [Internet]. Journal of Crystal Growth. 2001 ;233 253-258.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/S0022-0248(01)01561-5
Vancouver
Reyes Ardila D, de Camargo ASS, Andreeta JP, Nunes LA de O. Growth of yttrium orthovanadate by LHPG in isostatic oxygen atmosphere [Internet]. Journal of Crystal Growth. 2001 ;233 253-258.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/S0022-0248(01)01561-5
Artigo de periodico
Laser heated pedestal growth of orthorhombic SrHf´O IND.3´ single crystal fiber (1999)
Andreeta, Marcelo Rubens Barsi; Hernandes, Antônio Carlos ; Cuffini, S L; Guevara, J A; Mascarenhas, Yvonne Primerano
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, DIELÉTRICOS
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ABNT
ANDREETA, Marcelo Rubens Barsi et al. Laser heated pedestal growth of orthorhombic SrHf´O IND.3´ single crystal fiber. Journal of Crystal Growth, v. 200, p. 621-624, 1999Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/f65cb2dd-2b49-45e5-bb65-fb7c7f41ad0d/PROD005885_1020750.pdf. Acesso em: 18 out. 2024.
APA
Andreeta, M. R. B., Hernandes, A. C., Cuffini, S. L., Guevara, J. A., & Mascarenhas, Y. P. (1999). Laser heated pedestal growth of orthorhombic SrHf´O IND.3´ single crystal fiber. Journal of Crystal Growth, 200, 621-624. Recuperado de https://repositorio.usp.br/directbitstream/f65cb2dd-2b49-45e5-bb65-fb7c7f41ad0d/PROD005885_1020750.pdf
NLM
Andreeta MRB, Hernandes AC, Cuffini SL, Guevara JA, Mascarenhas YP. Laser heated pedestal growth of orthorhombic SrHf´O IND.3´ single crystal fiber [Internet]. Journal of Crystal Growth. 1999 ; 200 621-624.[citado 2024 out. 18 ] Available from: https://repositorio.usp.br/directbitstream/f65cb2dd-2b49-45e5-bb65-fb7c7f41ad0d/PROD005885_1020750.pdf
Vancouver
Andreeta MRB, Hernandes AC, Cuffini SL, Guevara JA, Mascarenhas YP. Laser heated pedestal growth of orthorhombic SrHf´O IND.3´ single crystal fiber [Internet]. Journal of Crystal Growth. 1999 ; 200 621-624.[citado 2024 out. 18 ] Available from: https://repositorio.usp.br/directbitstream/f65cb2dd-2b49-45e5-bb65-fb7c7f41ad0d/PROD005885_1020750.pdf
Artigo de periodico
Tellurium-rich phase in n-type bismuth telluride crystals grown by the Bridgman technique (1999)
Custódio, Maria Cláudia Cerchiari; Hernandes, Antônio Carlos
Source: Journal of Crystal Growth. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
CUSTÓDIO, Maria Cláudia Cerchiari e HERNANDES, Antônio Carlos. Tellurium-rich phase in n-type bismuth telluride crystals grown by the Bridgman technique. Journal of Crystal Growth, v. 205, p. 523-530, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(99)00264-x. Acesso em: 18 out. 2024.
APA
Custódio, M. C. C., & Hernandes, A. C. (1999). Tellurium-rich phase in n-type bismuth telluride crystals grown by the Bridgman technique. Journal of Crystal Growth, 205, 523-530. doi:10.1016/s0022-0248(99)00264-x
NLM
Custódio MCC, Hernandes AC. Tellurium-rich phase in n-type bismuth telluride crystals grown by the Bridgman technique [Internet]. Journal of Crystal Growth. 1999 ;205 523-530.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/s0022-0248(99)00264-x
Vancouver
Custódio MCC, Hernandes AC. Tellurium-rich phase in n-type bismuth telluride crystals grown by the Bridgman technique [Internet]. Journal of Crystal Growth. 1999 ;205 523-530.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/s0022-0248(99)00264-x
Artigo de periodico
LAP single crystal growth free of microorganisms by an accurately controlled solvent evaporation technique (1997)
Carvalho, J. F.; Hernandes, Antônio Carlos ; Nunes, F. D.; Moraes, L. B. O. A.; Misoguti, Lino ; Zílio, Sérgio Carlos
Source: Journal of Crystal Growth. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
CARVALHO, J. F. et al. LAP single crystal growth free of microorganisms by an accurately controlled solvent evaporation technique. Journal of Crystal Growth, v. 173, p. 487-491, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(96)00849-4. Acesso em: 18 out. 2024.
APA
Carvalho, J. F., Hernandes, A. C., Nunes, F. D., Moraes, L. B. O. A., Misoguti, L., & Zílio, S. C. (1997). LAP single crystal growth free of microorganisms by an accurately controlled solvent evaporation technique. Journal of Crystal Growth, 173, 487-491. doi:10.1016/s0022-0248(96)00849-4
NLM
Carvalho JF, Hernandes AC, Nunes FD, Moraes LBOA, Misoguti L, Zílio SC. LAP single crystal growth free of microorganisms by an accurately controlled solvent evaporation technique [Internet]. Journal of Crystal Growth. 1997 ; 173 487-491.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/s0022-0248(96)00849-4
Vancouver
Carvalho JF, Hernandes AC, Nunes FD, Moraes LBOA, Misoguti L, Zílio SC. LAP single crystal growth free of microorganisms by an accurately controlled solvent evaporation technique [Internet]. Journal of Crystal Growth. 1997 ; 173 487-491.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/s0022-0248(96)00849-4
Artigo de periodico
Laser heated pedestal growth of 'Sr IND.2'Ru'O IND.4' single-crystal fibers from Sr Ru'O IND.3' (1997)
Reyes Ardila, D; Andreeta, M R B; Cuffini, S L; Hernandes, Antônio Carlos ; Andreeta, José Pedro ; Mascarenhas, Yvonne Primerano
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, DIELÉTRICOS
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ABNT
REYES ARDILA, D et al. Laser heated pedestal growth of 'Sr IND.2'Ru'O IND.4' single-crystal fibers from Sr Ru'O IND.3'. Journal of Crystal Growth, v. 177, p. 52-56, 1997Tradução . . Acesso em: 18 out. 2024.
APA
Reyes Ardila, D., Andreeta, M. R. B., Cuffini, S. L., Hernandes, A. C., Andreeta, J. P., & Mascarenhas, Y. P. (1997). Laser heated pedestal growth of 'Sr IND.2'Ru'O IND.4' single-crystal fibers from Sr Ru'O IND.3'. Journal of Crystal Growth, 177, 52-56.
NLM
Reyes Ardila D, Andreeta MRB, Cuffini SL, Hernandes AC, Andreeta JP, Mascarenhas YP. Laser heated pedestal growth of 'Sr IND.2'Ru'O IND.4' single-crystal fibers from Sr Ru'O IND.3'. Journal of Crystal Growth. 1997 ; 177 52-56.[citado 2024 out. 18 ]
Vancouver
Reyes Ardila D, Andreeta MRB, Cuffini SL, Hernandes AC, Andreeta JP, Mascarenhas YP. Laser heated pedestal growth of 'Sr IND.2'Ru'O IND.4' single-crystal fibers from Sr Ru'O IND.3'. Journal of Crystal Growth. 1997 ; 177 52-56.[citado 2024 out. 18 ]
Artigo de periodico
Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs (1997)
Gonzalez-Borrero, Pedro P; Marega Junior, Euclydes ; Lubyshev, D I; Petitprez, E; Basmaji, Pierre
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
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ABNT
GONZALEZ-BORRERO, Pedro P et al. Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs. Journal of Crystal Growth, v. 175-176, p. 765-770, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(96)01182-7. Acesso em: 18 out. 2024.
APA
Gonzalez-Borrero, P. P., Marega Junior, E., Lubyshev, D. I., Petitprez, E., & Basmaji, P. (1997). Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs. Journal of Crystal Growth, 175-176, 765-770. doi:10.1016/s0022-0248(96)01182-7
NLM
Gonzalez-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs [Internet]. Journal of Crystal Growth. 1997 ; 175-176 765-770.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/s0022-0248(96)01182-7
Vancouver
Gonzalez-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs [Internet]. Journal of Crystal Growth. 1997 ; 175-176 765-770.[citado 2024 out. 18 ] Available from: https://doi.org/10.1016/s0022-0248(96)01182-7
Artigo de periodico
Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS' (1996)
González-Borrero, P P; Lubyshev, D I; Marega Junior, Euclydes ; Petitprez, E; Basmaji, Pierre
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, CIRCUITOS ELETRÔNICOS
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ABNT
GONZÁLEZ-BORRERO, P P et al. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth, v. 169, p. 424-8, 1996Tradução . . Acesso em: 18 out. 2024.
APA
González-Borrero, P. P., Lubyshev, D. I., Marega Junior, E., Petitprez, E., & Basmaji, P. (1996). Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth, 169, 424-8.
NLM
González-Borrero PP, Lubyshev DI, Marega Junior E, Petitprez E, Basmaji P. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth. 1996 ;169 424-8.[citado 2024 out. 18 ]
Vancouver
González-Borrero PP, Lubyshev DI, Marega Junior E, Petitprez E, Basmaji P. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth. 1996 ;169 424-8.[citado 2024 out. 18 ]
Artigo de periodico
Systematic investigation of shallow acceptor levels in 'ZN''SE' (1994)
Zhang, Y; Liu, W; Skromme, B J; Cheng, H; Shibli, S M; Tamargo, M C
Source: Journal of Crystal Growth. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ZHANG, Y et al. Systematic investigation of shallow acceptor levels in 'ZN''SE'. Journal of Crystal Growth, v. 138, p. 310-7, 1994Tradução . . Acesso em: 18 out. 2024.
APA
Zhang, Y., Liu, W., Skromme, B. J., Cheng, H., Shibli, S. M., & Tamargo, M. C. (1994). Systematic investigation of shallow acceptor levels in 'ZN''SE'. Journal of Crystal Growth, 138, 310-7.
NLM
Zhang Y, Liu W, Skromme BJ, Cheng H, Shibli SM, Tamargo MC. Systematic investigation of shallow acceptor levels in 'ZN''SE'. Journal of Crystal Growth. 1994 ;138 310-7.[citado 2024 out. 18 ]
Vancouver
Zhang Y, Liu W, Skromme BJ, Cheng H, Shibli SM, Tamargo MC. Systematic investigation of shallow acceptor levels in 'ZN''SE'. Journal of Crystal Growth. 1994 ;138 310-7.[citado 2024 out. 18 ]
Artigo de periodico
Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy (1993)
Lubyshev, D I; Rossi, J C; Gusev, G M; Basmaji, Pierre
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
LUBYSHEV, D I et al. Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth, v. 132, p. 533-7, 1993Tradução . . Acesso em: 18 out. 2024.
APA
Lubyshev, D. I., Rossi, J. C., Gusev, G. M., & Basmaji, P. (1993). Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth, 132, 533-7.
NLM
Lubyshev DI, Rossi JC, Gusev GM, Basmaji P. Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth. 1993 ;132 533-7.[citado 2024 out. 18 ]
Vancouver
Lubyshev DI, Rossi JC, Gusev GM, Basmaji P. Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy. Journal of Crystal Growth. 1993 ;132 533-7.[citado 2024 out. 18 ]
Artigo de periodico
Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy (1993)
Shibli, S M; Henriques, André Bohomoletz; Mendonca, C A C; Da Silva, E C F; Meneses, E A; Scolfaro, L M R; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
SHIBLI, S M et al. Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth, v. 127, p. 700-2, 1993Tradução . . Acesso em: 18 out. 2024.
APA
Shibli, S. M., Henriques, A. B., Mendonca, C. A. C., Da Silva, E. C. F., Meneses, E. A., Scolfaro, L. M. R., & Leite, J. R. (1993). Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth, 127, 700-2.
NLM
Shibli SM, Henriques AB, Mendonca CAC, Da Silva ECF, Meneses EA, Scolfaro LMR, Leite JR. Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth. 1993 ;127 700-2.[citado 2024 out. 18 ]
Vancouver
Shibli SM, Henriques AB, Mendonca CAC, Da Silva ECF, Meneses EA, Scolfaro LMR, Leite JR. Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth. 1993 ;127 700-2.[citado 2024 out. 18 ]
Artigo de periodico
Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy (1992)
Notari, A C; Schrappe, B J; Basmaji, Pierre; Hipólito, Oscar
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
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ABNT
NOTARI, A C et al. Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy. Journal of Crystal Growth, v. 116, p. 518-20, 1992Tradução . . Acesso em: 18 out. 2024.
APA
Notari, A. C., Schrappe, B. J., Basmaji, P., & Hipólito, O. (1992). Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy. Journal of Crystal Growth, 116, 518-20.
NLM
Notari AC, Schrappe BJ, Basmaji P, Hipólito O. Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy. Journal of Crystal Growth. 1992 ;116 518-20.[citado 2024 out. 18 ]
Vancouver
Notari AC, Schrappe BJ, Basmaji P, Hipólito O. Heavily 'SE' spike-doped 'GA''AS' grown by molecular beam epitaxy. Journal of Crystal Growth. 1992 ;116 518-20.[citado 2024 out. 18 ]
Artigo de periodico
Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy (1991)
Bernussi, A A; Iikawa, F; Motisuke, P; Basmaji, Pierre
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
BERNUSSI, A A et al. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, v. 108, p. 615-20, 1991Tradução . . Acesso em: 18 out. 2024.
APA
Bernussi, A. A., Iikawa, F., Motisuke, P., & Basmaji, P. (1991). Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 108, 615-20.
NLM
Bernussi AA, Iikawa F, Motisuke P, Basmaji P. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 1991 ;108 615-20.[citado 2024 out. 18 ]
Vancouver
Bernussi AA, Iikawa F, Motisuke P, Basmaji P. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 1991 ;108 615-20.[citado 2024 out. 18 ]

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