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Artigo de periodico
Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate (2006)
Pacheco-Salazar, D G; Leite, J. R.; Cerdeira, F; Meneses, E A; Li, S F; As, D J; Lischka, K
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESPALHAMENTO
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ABNT
PACHECO-SALAZAR, D G et al. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, v. 21, n. 7, p. 846-851, 2006Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/21/7/003. Acesso em: 10 jun. 2024.
APA
Pacheco-Salazar, D. G., Leite, J. R., Cerdeira, F., Meneses, E. A., Li, S. F., As, D. J., & Lischka, K. (2006). Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, 21( 7), 846-851. doi:10.1088/0268-1242/21/7/003
NLM
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2024 jun. 10 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Vancouver
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2024 jun. 10 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Artigo de periodico
Spin polarization by tilted magnetic field in wide "Ga IND.1-x" "Al IND.x" As parabolic quantum wells (2005)
Lima, Ivan Costa da Cunha; Gusev, Guennadii Michailovich; Leite, J. R.
Source: Journal of Superconductivity. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, CAMPO MAGNÉTICO
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ABNT
LIMA, Ivan Costa da Cunha e GUSEV, Guennadii Michailovich e LEITE, J. R. Spin polarization by tilted magnetic field in wide "Ga IND.1-x" "Al IND.x" As parabolic quantum wells. Journal of Superconductivity, v. 18. n. 2, p. 169-173, 2005Tradução . . Disponível em: http://www.springerlink.com/media/GAF8JB47ET2XPLEEAL5X/Contributions/W/1/3/6/W1360712G254U6K1.pdf. Acesso em: 10 jun. 2024.
APA
Lima, I. C. da C., Gusev, G. M., & Leite, J. R. (2005). Spin polarization by tilted magnetic field in wide "Ga IND.1-x" "Al IND.x" As parabolic quantum wells. Journal of Superconductivity, 18. n. 2, 169-173. Recuperado de http://www.springerlink.com/media/GAF8JB47ET2XPLEEAL5X/Contributions/W/1/3/6/W1360712G254U6K1.pdf
NLM
Lima IC da C, Gusev GM, Leite JR. Spin polarization by tilted magnetic field in wide "Ga IND.1-x" "Al IND.x" As parabolic quantum wells [Internet]. Journal of Superconductivity. 2005 ; 18. n. 2 169-173.[citado 2024 jun. 10 ] Available from: http://www.springerlink.com/media/GAF8JB47ET2XPLEEAL5X/Contributions/W/1/3/6/W1360712G254U6K1.pdf
Vancouver
Lima IC da C, Gusev GM, Leite JR. Spin polarization by tilted magnetic field in wide "Ga IND.1-x" "Al IND.x" As parabolic quantum wells [Internet]. Journal of Superconductivity. 2005 ; 18. n. 2 169-173.[citado 2024 jun. 10 ] Available from: http://www.springerlink.com/media/GAF8JB47ET2XPLEEAL5X/Contributions/W/1/3/6/W1360712G254U6K1.pdf
Artigo de periodico
Cubic binary compounds MnN and MnAs and diluted magnetic "Ga IND.1-x" "Mn IND.x" N semiconductor alloys: a first-principle study (2005)
Paiva, R de; Alves, J L A; Nogueira, R A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro
Source: Journal of Magnetism and Magnetic Materials. Unidade: IF
Subjects: MAGNETISMO, MATERIAIS MAGNÉTICOS, MATÉRIA CONDENSADA, FERROMAGNETISMO, SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
PAIVA, R de et al. Cubic binary compounds MnN and MnAs and diluted magnetic "Ga IND.1-x" "Mn IND.x" N semiconductor alloys: a first-principle study. Journal of Magnetism and Magnetic Materials, v. 288, n. 384-396, 2005Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5312&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=8a966c82df0d4a9d62f773e687985ec0. Acesso em: 10 jun. 2024.
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2005). Cubic binary compounds MnN and MnAs and diluted magnetic "Ga IND.1-x" "Mn IND.x" N semiconductor alloys: a first-principle study. Journal of Magnetism and Magnetic Materials, 288( 384-396). Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5312&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=8a966c82df0d4a9d62f773e687985ec0
NLM
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. Cubic binary compounds MnN and MnAs and diluted magnetic "Ga IND.1-x" "Mn IND.x" N semiconductor alloys: a first-principle study [Internet]. Journal of Magnetism and Magnetic Materials. 2005 ; 288( 384-396):[citado 2024 jun. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5312&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=8a966c82df0d4a9d62f773e687985ec0
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. Cubic binary compounds MnN and MnAs and diluted magnetic "Ga IND.1-x" "Mn IND.x" N semiconductor alloys: a first-principle study [Internet]. Journal of Magnetism and Magnetic Materials. 2005 ; 288( 384-396):[citado 2024 jun. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5312&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=8a966c82df0d4a9d62f773e687985ec0
Artigo de periodico
Ab initio studies of indium separated phases in AlGaInN quaternary alloys (2005)
Marques, M; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Physics Status Solidi C. Unidade: IF
Assunto: ESTADO SÓLIDO
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ABNT
MARQUES, M et al. Ab initio studies of indium separated phases in AlGaInN quaternary alloys. Physics Status Solidi C, v. 2, n. 7, p. 2508-2511, 2005Tradução . . Disponível em: https://doi.org/10.1002/pssc.200461516. Acesso em: 10 jun. 2024.
APA
Marques, M., Teles, L. K., Scolfaro, L. M. R., & Leite, J. R. (2005). Ab initio studies of indium separated phases in AlGaInN quaternary alloys. Physics Status Solidi C, 2( 7), 2508-2511. doi:10.1002/pssc.200461516
NLM
Marques M, Teles LK, Scolfaro LMR, Leite JR. Ab initio studies of indium separated phases in AlGaInN quaternary alloys [Internet]. Physics Status Solidi C. 2005 ; 2( 7): 2508-2511.[citado 2024 jun. 10 ] Available from: https://doi.org/10.1002/pssc.200461516
Vancouver
Marques M, Teles LK, Scolfaro LMR, Leite JR. Ab initio studies of indium separated phases in AlGaInN quaternary alloys [Internet]. Physics Status Solidi C. 2005 ; 2( 7): 2508-2511.[citado 2024 jun. 10 ] Available from: https://doi.org/10.1002/pssc.200461516
Artigo de periodico
Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant (2005)
Lamas, T. E.; Quivy, A. A.; Martini, S; Silva, M J da; Leite, J. R.
Source: Thin Solid Films. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MATERIAIS, EFEITO HALL, FOTOLUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS
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ABNT
LAMAS, T. E. et al. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, v. 474, n. 1-2, p. 25-30, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.tsf.2004.08.004. Acesso em: 10 jun. 2024.
APA
Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2005). Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, 474( 1-2), 25-30. doi:10.1016/j.tsf.2004.08.004
NLM
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 jun. 10 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
Vancouver
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 jun. 10 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
Artigo de periodico
Large InAs/GaAs quantum dots with an optical response in the long-wavelength region (2005)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, v. 278, p. 103-107, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2004.12.118. Acesso em: 10 jun. 2024.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2005). Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, 278, 103-107. doi:10.1016/j.jcrysgro.2004.12.118
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 jun. 10 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 jun. 10 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118
Artigo de periodico
Growth and characterization of cubic (2005)
Pacheco-Salazar, D G; Li, S F; Cerdeira, F; Meneses, E A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro; As, D J; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: CRISTALOGRAFIA, DIFRAÇÃO POR RAIOS X
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ABNT
PACHECO-SALAZAR, D G et al. Growth and characterization of cubic. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 10 jun. 2024.
APA
Pacheco-Salazar, D. G., Li, S. F., Cerdeira, F., Meneses, E. A., Leite, J. R., Scolfaro, L. M. R., et al. (2005). Growth and characterization of cubic. Journal of Crystal Growth, 284( 3-4), 379-387. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
NLM
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 jun. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Vancouver
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 jun. 10 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Artigo de periodico
Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate (2005)
Leite, J. R.; Scolfaro, Luisa Maria Ribeiro
Source: Journal of Crystal Growth. Unidade: IF
Subjects: MATÉRIA CONDENSADA, CRISTALOGRAFIA, FEIXES, CRESCIMENTO DE CRISTAIS, ESTRUTURA ELETRÔNICA
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ABNT
LEITE, J. R. e SCOLFARO, Luisa Maria Ribeiro. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2005.07.049. Acesso em: 10 jun. 2024.
APA
Leite, J. R., & Scolfaro, L. M. R. (2005). Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, 284( 3-4), 379-387. doi:10.1016/j.jcrysgro.2005.07.049
NLM
Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 jun. 10 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049
Vancouver
Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 jun. 10 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049
Artigo de periodico
The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot (2004)
Rodríguez Coppola, H; Tutor Sánchez, J; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro; García Moliner, F
Source: Microelectronics Journal. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES, MICROELETRÔNICA
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ABNT
RODRÍGUEZ COPPOLA, H et al. The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot. Microelectronics Journal, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2003.10.005. Acesso em: 10 jun. 2024.
APA
Rodríguez Coppola, H., Tutor Sánchez, J., Leite, J. R., Scolfaro, L. M. R., & García Moliner, F. (2004). The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot. Microelectronics Journal. doi:10.1016/j.mejo.2003.10.005
NLM
Rodríguez Coppola H, Tutor Sánchez J, Leite JR, Scolfaro LMR, García Moliner F. The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot [Internet]. Microelectronics Journal. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1016/j.mejo.2003.10.005
Vancouver
Rodríguez Coppola H, Tutor Sánchez J, Leite JR, Scolfaro LMR, García Moliner F. The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot [Internet]. Microelectronics Journal. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1016/j.mejo.2003.10.005
Artigo de periodico
Evolution from commensurability to size-effects structures in three-dimensional billiards (2004)
Sotomayor, N M; Gusev, Guennadii Michailovich; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA
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ABNT
SOTOMAYOR, N M e GUSEV, Guennadii Michailovich e LEITE, J. R. Evolution from commensurability to size-effects structures in three-dimensional billiards. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400028. Acesso em: 10 jun. 2024.
APA
Sotomayor, N. M., Gusev, G. M., & Leite, J. R. (2004). Evolution from commensurability to size-effects structures in three-dimensional billiards. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400028
NLM
Sotomayor NM, Gusev GM, Leite JR. Evolution from commensurability to size-effects structures in three-dimensional billiards [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000400028
Vancouver
Sotomayor NM, Gusev GM, Leite JR. Evolution from commensurability to size-effects structures in three-dimensional billiards [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000400028
Artigo de periodico
Charge and spin distributions in 'Ga IND. 1-x''Mn IND. x'As/GaAs ferromagnetic multilayers (2004)
Rodrigues, S C P; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Lima, I C C; Sipahi, Guilherme Matos; Boselli, M A
Source: Physical Review B. Unidade: IF
Subjects: FERROMAGNETISMO, ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
RODRIGUES, S C P et al. Charge and spin distributions in 'Ga IND. 1-x''Mn IND. x'As/GaAs ferromagnetic multilayers. Physical Review B, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000070000016165308000001&idtype=cvips. Acesso em: 10 jun. 2024.
APA
Rodrigues, S. C. P., Scolfaro, L. M. R., Leite, J. R., Lima, I. C. C., Sipahi, G. M., & Boselli, M. A. (2004). Charge and spin distributions in 'Ga IND. 1-x''Mn IND. x'As/GaAs ferromagnetic multilayers. Physical Review B. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000070000016165308000001&idtype=cvips
NLM
Rodrigues SCP, Scolfaro LMR, Leite JR, Lima ICC, Sipahi GM, Boselli MA. Charge and spin distributions in 'Ga IND. 1-x''Mn IND. x'As/GaAs ferromagnetic multilayers [Internet]. Physical Review B. 2004 ;[citado 2024 jun. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000070000016165308000001&idtype=cvips
Vancouver
Rodrigues SCP, Scolfaro LMR, Leite JR, Lima ICC, Sipahi GM, Boselli MA. Charge and spin distributions in 'Ga IND. 1-x''Mn IND. x'As/GaAs ferromagnetic multilayers [Internet]. Physical Review B. 2004 ;[citado 2024 jun. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000070000016165308000001&idtype=cvips
Artigo de periodico
Charge density wave instability in a parabolic well in perpendicular magnetic field (2004)
Gousev, Guennadii Michailovich; Sergio, C. S.; Quivy, A. A.; Lamas, T. E.; Leite, J. R.; Estibals, O.; Portal, J. C.
Source: Physica E - Low Dimensional Systems & Nanostructures. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
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ABNT
GOUSEV, Guennadii Michailovich et al. Charge density wave instability in a parabolic well in perpendicular magnetic field. Physica E - Low Dimensional Systems & Nanostructures, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf. Acesso em: 10 jun. 2024.
APA
Gousev, G. M., Sergio, C. S., Quivy, A. A., Lamas, T. E., Leite, J. R., Estibals, O., & Portal, J. C. (2004). Charge density wave instability in a parabolic well in perpendicular magnetic field. Physica E - Low Dimensional Systems & Nanostructures. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf
NLM
Gousev GM, Sergio CS, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Charge density wave instability in a parabolic well in perpendicular magnetic field [Internet]. Physica E - Low Dimensional Systems & Nanostructures. 2004 ;[citado 2024 jun. 10 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf
Vancouver
Gousev GM, Sergio CS, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Charge density wave instability in a parabolic well in perpendicular magnetic field [Internet]. Physica E - Low Dimensional Systems & Nanostructures. 2004 ;[citado 2024 jun. 10 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf
Artigo de periodico
Hole mobility in zincblende c-GaN (2004)
Rodrigues, C G; Fernandez, J R L; Leite, J. R.; Chitta, V A; Freire, V N; Vasconcellos, A R; Luzzi, R
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, TERMODINÂMICA
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ABNT
RODRIGUES, C G et al. Hole mobility in zincblende c-GaN. Journal of Applied Physics, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips. Acesso em: 10 jun. 2024.
APA
Rodrigues, C. G., Fernandez, J. R. L., Leite, J. R., Chitta, V. A., Freire, V. N., Vasconcellos, A. R., & Luzzi, R. (2004). Hole mobility in zincblende c-GaN. Journal of Applied Physics. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips
NLM
Rodrigues CG, Fernandez JRL, Leite JR, Chitta VA, Freire VN, Vasconcellos AR, Luzzi R. Hole mobility in zincblende c-GaN [Internet]. Journal of Applied Physics. 2004 ;[citado 2024 jun. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips
Vancouver
Rodrigues CG, Fernandez JRL, Leite JR, Chitta VA, Freire VN, Vasconcellos AR, Luzzi R. Hole mobility in zincblende c-GaN [Internet]. Journal of Applied Physics. 2004 ;[citado 2024 jun. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips
Artigo de periodico
First-principles materials study for spintronics: MnAs and MnN (2004)
Paiva, R de; Alves, J L A; Nogueira, R A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAIVA, R de et al. First-principles materials study for spintronics: MnAs and MnN. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400008. Acesso em: 10 jun. 2024.
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2004). First-principles materials study for spintronics: MnAs and MnN. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400008
NLM
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First-principles materials study for spintronics: MnAs and MnN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000400008
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First-principles materials study for spintronics: MnAs and MnN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000400008
Artigo de periodico
Strain-induced shifts of the zone-center phonons of III-nitrides (2004)
Alves, H W Leite; Alves, J L A; Santos, A M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, EFEITO MOSSBAUER
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W Leite et al. Strain-induced shifts of the zone-center phonons of III-nitrides. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400041. Acesso em: 10 jun. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2004). Strain-induced shifts of the zone-center phonons of III-nitrides. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400041
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Strain-induced shifts of the zone-center phonons of III-nitrides [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000400041
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Strain-induced shifts of the zone-center phonons of III-nitrides [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000400041
Artigo de periodico
Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures (2004)
Boselli, M A; Lima, I C da Cunha; Leite, J. R.; Troper, A; Ghazali, A
Source: Applied Physics Letters. Unidade: IF
Subjects: NANOTECNOLOGIA, FERROMAGNETISMO, MÉTODO DE MONTE CARLO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BOSELLI, M A et al. Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures. Applied Physics Letters, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1646759. Acesso em: 10 jun. 2024.
APA
Boselli, M. A., Lima, I. C. da C., Leite, J. R., Troper, A., & Ghazali, A. (2004). Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures. Applied Physics Letters. doi:10.1063/1.1646759
NLM
Boselli MA, Lima IC da C, Leite JR, Troper A, Ghazali A. Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures [Internet]. Applied Physics Letters. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1063/1.1646759
Vancouver
Boselli MA, Lima IC da C, Leite JR, Troper A, Ghazali A. Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures [Internet]. Applied Physics Letters. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1063/1.1646759
Artigo de periodico
Phase separation and ordering in group-III nitride alloys (2004)
Teles, L K; Marques, M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, TERMODINÂMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TELES, L K et al. Phase separation and ordering in group-III nitride alloys. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400014. Acesso em: 10 jun. 2024.
APA
Teles, L. K., Marques, M., Scolfaro, L. M. R., & Leite, J. R. (2004). Phase separation and ordering in group-III nitride alloys. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400014
NLM
Teles LK, Marques M, Scolfaro LMR, Leite JR. Phase separation and ordering in group-III nitride alloys [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000400014
Vancouver
Teles LK, Marques M, Scolfaro LMR, Leite JR. Phase separation and ordering in group-III nitride alloys [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000400014
Artigo de periodico
Near band-edge optical properties of cubic GaN with and without carbon doping (2004)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Soares, J A N T; Noriega, O C; Leite, J. R.; As, D J; Salazar, D G P; Schikora, D; Lischka, K
Source: Microelectronics Journal. Unidade: IF
Subjects: MATÉRIA CONDENSADA, FILMES FINOS, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal, 2004Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00226-x. Acesso em: 10 jun. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Soares, J. A. N. T., Noriega, O. C., Leite, J. R., et al. (2004). Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal. doi:10.1016/s0026-2692(03)00226-x
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Noriega OC, Leite JR, As DJ, Salazar DGP, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN with and without carbon doping [Internet]. Microelectronics Journal. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1016/s0026-2692(03)00226-x
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Noriega OC, Leite JR, As DJ, Salazar DGP, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN with and without carbon doping [Internet]. Microelectronics Journal. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1016/s0026-2692(03)00226-x
Artigo de periodico
Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs (2004)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Poças, L C; Toginho Filho, D O; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LOURENÇO, S A et al. Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000300031. Acesso em: 10 jun. 2024.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Poças, L. C., Toginho Filho, D. O., & Leite, J. R. (2004). Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000300031
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Poças LC, Toginho Filho DO, Leite JR. Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000300031
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Poças LC, Toginho Filho DO, Leite JR. Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000300031
Artigo de periodico
Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN (2004)
Alves, H W Leite; Alves, J L A; Santos, A M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Brazilian Journal of Physics. Unidade: IF
Subjects: FÍSICA, MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALVES, H W Leite et al. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Brazilian Journal of Physics, 2004Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332004000400021. Acesso em: 10 jun. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2004). Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Brazilian Journal of Physics. doi:10.1590/s0103-97332004000400021
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000400021
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN [Internet]. Brazilian Journal of Physics. 2004 ;[citado 2024 jun. 10 ] Available from: https://doi.org/10.1590/s0103-97332004000400021

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