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  • Artigo de periodico

    Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes (2007)

    Baierle, Rogerio Jose; Schmidt, T M; Fazzio, Adalberto

    Source: Solid State Communications. Unidade: IF

    Subjects: VIDRO, VIDRO

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    • ABNT

      BAIERLE, Rogerio Jose e SCHMIDT, T M e FAZZIO, Adalberto. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes. Solid State Communications, v. 141, n. 1-2, p. 49-53, 2007Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2007.01.036. Acesso em: 01 nov. 2024.

    • APA

      Baierle, R. J., Schmidt, T. M., & Fazzio, A. (2007). Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes. Solid State Communications, 141( 1-2), 49-53. doi:10.1016/j.ssc.2007.01.036

    • NLM

      Baierle RJ, Schmidt TM, Fazzio A. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes [Internet]. Solid State Communications. 2007 ; 141( 1-2): 49-53.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/j.ssc.2007.01.036

    • Vancouver

      Baierle RJ, Schmidt TM, Fazzio A. Adsorption of CO and NO molecules on carbon doped boron nitride nanotubes [Internet]. Solid State Communications. 2007 ; 141( 1-2): 49-53.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/j.ssc.2007.01.036

  • Trabalho de evento-anais periodico

    Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations (2007)

    Lino, A T; Borges, P D; Scolfaro, Luisa Maria Ribeiro; Rodrigues, S C P; Silva Junior, E F da

    Source: AIP Conference Proceedings. Conference titles: 28th International Conference on the Physics of Semiconductors - ICPS 2006. Unidades: IF, EP

    Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA

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    • ABNT

      LINO, A T et al. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations. AIP Conference Proceedings. New York: The Institute. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal. Acesso em: 01 nov. 2024. , 2007

    • APA

      Lino, A. T., Borges, P. D., Scolfaro, L. M. R., Rodrigues, S. C. P., & Silva Junior, E. F. da. (2007). Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations. AIP Conference Proceedings. New York: The Institute. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal

    • NLM

      Lino AT, Borges PD, Scolfaro LMR, Rodrigues SCP, Silva Junior EF da. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 529-530.[citado 2024 nov. 01 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal

    • Vancouver

      Lino AT, Borges PD, Scolfaro LMR, Rodrigues SCP, Silva Junior EF da. Optical properties and carrier effective masses of Rutile 'SnO IND.2' as obtained from full relativistic ab initio calculations [Internet]. AIP Conference Proceedings. 2007 ; 893 529-530.[citado 2024 nov. 01 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APCPCS000893000001000259000001&idtype=cvips&prog=normal

  • Artigo de periodico

    Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations (2006)

    Garcia, Joelson Cott; Scolfaro, Luisa Maria Ribeiro; Lino, Antonio Tadeu; Freire, V N; Farias, G A; Silva, C C; Alves, H W Leite; Rodrigues, S C P; Silva, E F da

    Source: Journal of Applied Physics. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, DIELÉTRICOS, PROPRIEDADES DOS MATERIAIS

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      GARCIA, Joelson Cott et al. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations. Journal of Applied Physics, v. 100, n. 1, p. 104103-1/104103-9, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2386967. Acesso em: 01 nov. 2024.

    • APA

      Garcia, J. C., Scolfaro, L. M. R., Lino, A. T., Freire, V. N., Farias, G. A., Silva, C. C., et al. (2006). Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations. Journal of Applied Physics, 100( 1), 104103-1/104103-9. doi:10.1063/1.2386967

    • NLM

      Garcia JC, Scolfaro LMR, Lino AT, Freire VN, Farias GA, Silva CC, Alves HWL, Rodrigues SCP, Silva EF da. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations [Internet]. Journal of Applied Physics. 2006 ; 100( 1): 104103-1/104103-9.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1063/1.2386967

    • Vancouver

      Garcia JC, Scolfaro LMR, Lino AT, Freire VN, Farias GA, Silva CC, Alves HWL, Rodrigues SCP, Silva EF da. Structural, electronic, and optical properties of "ZrO IND.2" from ab initio calculations [Internet]. Journal of Applied Physics. 2006 ; 100( 1): 104103-1/104103-9.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1063/1.2386967

  • Artigo de periodico

    Electronic and magnetic properties of Mn-doped InP nanowires from first principles (2006)

    Schmidt, T M; Venezuela, P; Arantes Junior, Jeverson Teodoro; Fazzio, Adalberto

    Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS, SEMICONDUTORES, FERROMAGNETISMO

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    • ABNT

      SCHMIDT, T M et al. Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, v. 73, n. 23, p. 235330, 2006Tradução . . Disponível em: https://doi.org/10.1103/physrevb.73.235330. Acesso em: 01 nov. 2024.

    • APA

      Schmidt, T. M., Venezuela, P., Arantes Junior, J. T., & Fazzio, A. (2006). Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, 73( 23), 235330. doi:10.1103/physrevb.73.235330

    • NLM

      Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1103/physrevb.73.235330

    • Vancouver

      Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1103/physrevb.73.235330

  • Artigo de periodico

    Hydrogen adsorption on carbon-doped boron nitride nanotube (2006)

    Baierle, Rogerio Jose; Piquini, P; Schmidt, Tome Mauro; Fazzio, Adalberto

    Source: Journal of Physical Chemistry. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS

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    • ABNT

      BAIERLE, Rogerio Jose et al. Hydrogen adsorption on carbon-doped boron nitride nanotube. Journal of Physical Chemistry, v. 110, n. 42, p. 21184-21188, 2006Tradução . . Disponível em: http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf. Acesso em: 01 nov. 2024.

    • APA

      Baierle, R. J., Piquini, P., Schmidt, T. M., & Fazzio, A. (2006). Hydrogen adsorption on carbon-doped boron nitride nanotube. Journal of Physical Chemistry, 110( 42), 21184-21188. Recuperado de http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf

    • NLM

      Baierle RJ, Piquini P, Schmidt TM, Fazzio A. Hydrogen adsorption on carbon-doped boron nitride nanotube [Internet]. Journal of Physical Chemistry. 2006 ; 110( 42): 21184-21188.[citado 2024 nov. 01 ] Available from: http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf

    • Vancouver

      Baierle RJ, Piquini P, Schmidt TM, Fazzio A. Hydrogen adsorption on carbon-doped boron nitride nanotube [Internet]. Journal of Physical Chemistry. 2006 ; 110( 42): 21184-21188.[citado 2024 nov. 01 ] Available from: http://pubs.acs.org/cgi-bin/article.cgi/jpcbfk/2006/110/i42/pdf/jp061587s.pdf

  • Artigo de periodico

    Formation energy of native defects in BN nanotubes: an ab initio study (2005)

    Piquini, P; Baierle, Rogerio Jose; Schmidt, T M; Fazzio, Adalberto

    Source: Nanotechnology. Unidade: IF

    Subjects: MATERIAIS, ESTRUTURA ELETRÔNICA, NANOTECNOLOGIA

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    • ABNT

      PIQUINI, P et al. Formation energy of native defects in BN nanotubes: an ab initio study. Nanotechnology, v. 16, n. 6, p. 827-831, 2005Tradução . . Disponível em: https://doi.org/10.1088/0957-4484/16/6/035. Acesso em: 01 nov. 2024.

    • APA

      Piquini, P., Baierle, R. J., Schmidt, T. M., & Fazzio, A. (2005). Formation energy of native defects in BN nanotubes: an ab initio study. Nanotechnology, 16( 6), 827-831. doi:10.1088/0957-4484/16/6/035

    • NLM

      Piquini P, Baierle RJ, Schmidt TM, Fazzio A. Formation energy of native defects in BN nanotubes: an ab initio study [Internet]. Nanotechnology. 2005 ; 16( 6): 827-831.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1088/0957-4484/16/6/035

    • Vancouver

      Piquini P, Baierle RJ, Schmidt TM, Fazzio A. Formation energy of native defects in BN nanotubes: an ab initio study [Internet]. Nanotechnology. 2005 ; 16( 6): 827-831.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1088/0957-4484/16/6/035

  • Artigo de periodico

    Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations (2005)

    Schmidt, T M; Miwa, R H; Venezuela, P; Fazzio, Adalberto

    Source: Physical Review B. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, ESTRUTURA ELETRÔNICA

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    • ABNT

      SCHMIDT, T M et al. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, v. 72, n. 19, p. 193404/1-193404/4, 2005Tradução . . Acesso em: 01 nov. 2024.

    • APA

      Schmidt, T. M., Miwa, R. H., Venezuela, P., & Fazzio, A. (2005). Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, 72( 19), 193404/1-193404/4.

    • NLM

      Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.[citado 2024 nov. 01 ]

    • Vancouver

      Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.[citado 2024 nov. 01 ]

  • Artigo de periodico

    Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) (2005)

    Miwa, R H; Orellana, W; Fazzio, Adalberto

    Source: Applied Physics Letters. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA

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      MIWA, R H e ORELLANA, W e FAZZIO, Adalberto. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, v. 86, p. 213111, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1931027. Acesso em: 01 nov. 2024.

    • APA

      Miwa, R. H., Orellana, W., & Fazzio, A. (2005). Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, 86, 213111. doi:10.1063/1.1931027

    • NLM

      Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1063/1.1931027

    • Vancouver

      Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1063/1.1931027

  • Artigo de periodico

    Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces (2005)

    Miwa, R H; Orellana, W; Fazzio, Adalberto

    Source: Applied Surface Science. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA

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      MIWA, R H e ORELLANA, W e FAZZIO, Adalberto. Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces. Applied Surface Science, v. 244, p. 124-128, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.apsusc.2004.09.165. Acesso em: 01 nov. 2024.

    • APA

      Miwa, R. H., Orellana, W., & Fazzio, A. (2005). Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces. Applied Surface Science, 244, 124-128. doi:10.1016/j.apsusc.2004.09.165

    • NLM

      Miwa RH, Orellana W, Fazzio A. Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces [Internet]. Applied Surface Science. 2005 ; 244 124-128.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/j.apsusc.2004.09.165

    • Vancouver

      Miwa RH, Orellana W, Fazzio A. Carbon nanotube adsorbed on hydrogenated Si(0 0 1) surfaces [Internet]. Applied Surface Science. 2005 ; 244 124-128.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/j.apsusc.2004.09.165

  • Artigo de periodico

    Stability and electronic properties of carbon nanotubes adsorbed on Si(001) (2004)

    Orellana, W; Miwa, R H; Fazzio, Adalberto

    Source: Surface Science. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, ESTRUTURA ELETRÔNICA

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      ORELLANA, W e MIWA, R H e FAZZIO, Adalberto. Stability and electronic properties of carbon nanotubes adsorbed on Si(001). Surface Science, v. 566-568, p. 728-732, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.susc.2004.06.006. Acesso em: 01 nov. 2024.

    • APA

      Orellana, W., Miwa, R. H., & Fazzio, A. (2004). Stability and electronic properties of carbon nanotubes adsorbed on Si(001). Surface Science, 566-568, 728-732. doi:10.1016/j.susc.2004.06.006

    • NLM

      Orellana W, Miwa RH, Fazzio A. Stability and electronic properties of carbon nanotubes adsorbed on Si(001) [Internet]. Surface Science. 2004 ; 566-568 728-732.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/j.susc.2004.06.006

    • Vancouver

      Orellana W, Miwa RH, Fazzio A. Stability and electronic properties of carbon nanotubes adsorbed on Si(001) [Internet]. Surface Science. 2004 ; 566-568 728-732.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/j.susc.2004.06.006

  • Artigo de periodico

    Adsorption of 'Nh IND. 3' on Ge(001) (2003)

    Miotto, R; Miwa, R H; Ferraz, A. C.

    Source: Phisical Review B. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA

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      MIOTTO, R e MIWA, R H e FERRAZ, A. C. Adsorption of 'Nh IND. 3' on Ge(001). Phisical Review B, v. 68, n. 11, p. 115436/1-1155436/6, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips. Acesso em: 01 nov. 2024.

    • APA

      Miotto, R., Miwa, R. H., & Ferraz, A. C. (2003). Adsorption of 'Nh IND. 3' on Ge(001). Phisical Review B, 68( 11), 115436/1-1155436/6. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips

    • NLM

      Miotto R, Miwa RH, Ferraz AC. Adsorption of 'Nh IND. 3' on Ge(001) [Internet]. Phisical Review B. 2003 ; 68( 11): 115436/1-1155436/6.[citado 2024 nov. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips

    • Vancouver

      Miotto R, Miwa RH, Ferraz AC. Adsorption of 'Nh IND. 3' on Ge(001) [Internet]. Phisical Review B. 2003 ; 68( 11): 115436/1-1155436/6.[citado 2024 nov. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000068000011115436000001&idtype=cvips

  • Artigo de periodico

    Theoretical study of native defects in BN nanotubes (2003)

    Schmidt, T M; Baierle, Rogerio Jose; Piquini, P; Fazzio, Adalberto

    Source: Physical Review. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, POLÍMEROS (MATERIAIS), ESTRUTURA DOS SÓLIDOS, CRISTALOGRAFIA

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      SCHMIDT, T M et al. Theoretical study of native defects in BN nanotubes. Physical Review, v. 67, n. 11, p. 113407/1-113407/4, 2003Tradução . . Disponível em: https://doi.org/10.1103/physrevb.67.113407. Acesso em: 01 nov. 2024.

    • APA

      Schmidt, T. M., Baierle, R. J., Piquini, P., & Fazzio, A. (2003). Theoretical study of native defects in BN nanotubes. Physical Review, 67( 11), 113407/1-113407/4. doi:10.1103/physrevb.67.113407

    • NLM

      Schmidt TM, Baierle RJ, Piquini P, Fazzio A. Theoretical study of native defects in BN nanotubes [Internet]. Physical Review. 2003 ; 67( 11): 113407/1-113407/4.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1103/physrevb.67.113407

    • Vancouver

      Schmidt TM, Baierle RJ, Piquini P, Fazzio A. Theoretical study of native defects in BN nanotubes [Internet]. Physical Review. 2003 ; 67( 11): 113407/1-113407/4.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1103/physrevb.67.113407

  • Artigo de periodico

    Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' (2003)

    Miwa, R H; Venezuela, P; Fazzio, Adalberto

    Source: Physical Review B. Unidade: IF

    Assunto: ESTRUTURA ELETRÔNICA

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      MIWA, R H e VENEZUELA, P e FAZZIO, Adalberto. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, v. 67, n. 20, p. 205317/1-205317, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips. Acesso em: 01 nov. 2024.

    • APA

      Miwa, R. H., Venezuela, P., & Fazzio, A. (2003). Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, 67( 20), 205317/1-205317. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips

    • NLM

      Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2024 nov. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips

    • Vancouver

      Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2024 nov. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips

  • Artigo de periodico

    Ab initio study of the GaAs(001)-In(4 X 2) surface (2003)

    Miwa, Roberto Hiroki; Miotto, R.; Ferraz, A. C.; Srivastava, G P

    Source: Physical Review B. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA

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      MIWA, Roberto Hiroki et al. Ab initio study of the GaAs(001)-In(4 X 2) surface. Physical Review B, v. 67, n. 4, p. 045325/1-045325/5, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips. Acesso em: 01 nov. 2024.

    • APA

      Miwa, R. H., Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2003). Ab initio study of the GaAs(001)-In(4 X 2) surface. Physical Review B, 67( 4), 045325/1-045325/5. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips

    • NLM

      Miwa RH, Miotto R, Ferraz AC, Srivastava GP. Ab initio study of the GaAs(001)-In(4 X 2) surface [Internet]. Physical Review B. 2003 ; 67( 4): 045325/1-045325/5.[citado 2024 nov. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips

    • Vancouver

      Miwa RH, Miotto R, Ferraz AC, Srivastava GP. Ab initio study of the GaAs(001)-In(4 X 2) surface [Internet]. Physical Review B. 2003 ; 67( 4): 045325/1-045325/5.[citado 2024 nov. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000004045325000001&idtype=cvips

  • Artigo de periodico

    First-principles calculations of carbon nanotubes adsorbed on Si(001) (2003)

    Orellana, W; Miwa, R H; Fazzio, Adalberto

    Source: Physical Review Letters. Unidade: IF

    Subjects: PROPRIEDADES DOS MATERIAIS, ESTRUTURA ELETRÔNICA, NANOTECNOLOGIA

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    • ABNT

      ORELLANA, W e MIWA, R H e FAZZIO, Adalberto. First-principles calculations of carbon nanotubes adsorbed on Si(001). Physical Review Letters, v. 91, n. 16, p. 166802/1-166802/4, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips. Acesso em: 01 nov. 2024.

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      Orellana, W., Miwa, R. H., & Fazzio, A. (2003). First-principles calculations of carbon nanotubes adsorbed on Si(001). Physical Review Letters, 91( 16), 166802/1-166802/4. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips

    • NLM

      Orellana W, Miwa RH, Fazzio A. First-principles calculations of carbon nanotubes adsorbed on Si(001) [Internet]. Physical Review Letters. 2003 ; 91( 16): 166802/1-166802/4.[citado 2024 nov. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips

    • Vancouver

      Orellana W, Miwa RH, Fazzio A. First-principles calculations of carbon nanotubes adsorbed on Si(001) [Internet]. Physical Review Letters. 2003 ; 91( 16): 166802/1-166802/4.[citado 2024 nov. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000091000016166802000001&idtype=cvips

  • Artigo de periodico

    In-rich (4x2) and (2x4) reconstructions of the InAs(001) surface (2003)

    Miwa, R. H; Miotto, R; Ferraz, A. C.

    Source: Surface Science. Unidade: IF

    Subjects: ESTRUTURA ATÔMICA (FÍSICA MODERNA), SUPERFÍCIE FÍSICA, MICROSCOPIA ELETRÔNICA

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      MIWA, R. H e MIOTTO, R e FERRAZ, A. C. In-rich (4x2) and (2x4) reconstructions of the InAs(001) surface. Surface Science, v. 542, n. 1-2, p. 101-111, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0039-6028(03)00955-5. Acesso em: 01 nov. 2024.

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      Miwa, R. H., Miotto, R., & Ferraz, A. C. (2003). In-rich (4x2) and (2x4) reconstructions of the InAs(001) surface. Surface Science, 542( 1-2), 101-111. doi:10.1016/s0039-6028(03)00955-5

    • NLM

      Miwa RH, Miotto R, Ferraz AC. In-rich (4x2) and (2x4) reconstructions of the InAs(001) surface [Internet]. Surface Science. 2003 ; 542( 1-2): 101-111.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/s0039-6028(03)00955-5

    • Vancouver

      Miwa RH, Miotto R, Ferraz AC. In-rich (4x2) and (2x4) reconstructions of the InAs(001) surface [Internet]. Surface Science. 2003 ; 542( 1-2): 101-111.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/s0039-6028(03)00955-5

  • Artigo de periodico

    Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds (2001)

    Ramos, L. E.; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Castineira, J L P; Rosa, A L; Leite, J. R.

    Source: Physical Review B. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES, SUPERFÍCIE FÍSICA

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      RAMOS, L. E. et al. Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds. Physical Review B, v. 63, n. 16, p. 5210/1-5210/10, 2001Tradução . . Disponível em: https://doi.org/10.1103/physrevb.63.165210. Acesso em: 01 nov. 2024.

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      Ramos, L. E., Teles, L. K., Scolfaro, L. M. R., Castineira, J. L. P., Rosa, A. L., & Leite, J. R. (2001). Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds. Physical Review B, 63( 16), 5210/1-5210/10. doi:10.1103/physrevb.63.165210

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      Ramos LE, Teles LK, Scolfaro LMR, Castineira JLP, Rosa AL, Leite JR. Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds [Internet]. Physical Review B. 2001 ; 63( 16): 5210/1-5210/10.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1103/physrevb.63.165210

    • Vancouver

      Ramos LE, Teles LK, Scolfaro LMR, Castineira JLP, Rosa AL, Leite JR. Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds [Internet]. Physical Review B. 2001 ; 63( 16): 5210/1-5210/10.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1103/physrevb.63.165210

  • Artigo de periodico

    Ab initio calculations on the compensation mechanisms in InP (2001)

    Schmidt, T M; Miwa, R H; Fazzio, Adalberto; Mota, R.

    Source: Solid State Communications. Unidade: IF

    Subjects: SEMICONDUTORES, MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS;PROPRIEDADES TÉRMICAS)

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      SCHMIDT, T M et al. Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, v. 117, n. 6, p. 353-355, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(00)00487-7. Acesso em: 01 nov. 2024.

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      Schmidt, T. M., Miwa, R. H., Fazzio, A., & Mota, R. (2001). Ab initio calculations on the compensation mechanisms in InP. Solid State Communications, 117( 6), 353-355. doi:10.1016/s0038-1098(00)00487-7

    • NLM

      Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/s0038-1098(00)00487-7

    • Vancouver

      Schmidt TM, Miwa RH, Fazzio A, Mota R. Ab initio calculations on the compensation mechanisms in InP [Internet]. Solid State Communications. 2001 ; 117( 6): 353-355.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/s0038-1098(00)00487-7

  • Artigo de periodico

    Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) (2001)

    Miotto, R.; Srivastava, G P; Miwa, R H; Ferraz, A. C.

    Source: Journal of Chemical Physics. Unidade: IF

    Subjects: MICROSCOPIA, FEIXES, ABSORÇÃO, SUPERFÍCIE FÍSICA

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      MIOTTO, R. et al. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1). Journal of Chemical Physics, v. 114, n. 21, p. 9549-9556, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips. Acesso em: 01 nov. 2024.

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      Miotto, R., Srivastava, G. P., Miwa, R. H., & Ferraz, A. C. (2001). Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1). Journal of Chemical Physics, 114( 21), 9549-9556. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips

    • NLM

      Miotto R, Srivastava GP, Miwa RH, Ferraz AC. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) [Internet]. Journal of Chemical Physics. 2001 ; 114( 21): 9549-9556.[citado 2024 nov. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips

    • Vancouver

      Miotto R, Srivastava GP, Miwa RH, Ferraz AC. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) [Internet]. Journal of Chemical Physics. 2001 ; 114( 21): 9549-9556.[citado 2024 nov. 01 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips

  • Artigo de periodico

    Stacking fault effects in pure and n-type doped GaAs (2001)

    Schmidt, T M; Justo Filho, João Francisco ; Fazzio, Adalberto

    Source: Applied Physics Letters. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES

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      SCHMIDT, T M e JUSTO FILHO, João Francisco e FAZZIO, Adalberto. Stacking fault effects in pure and n-type doped GaAs. Applied Physics Letters, v. 78, n. 7, p. 907-909, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1347005. Acesso em: 01 nov. 2024.

    • APA

      Schmidt, T. M., Justo Filho, J. F., & Fazzio, A. (2001). Stacking fault effects in pure and n-type doped GaAs. Applied Physics Letters, 78( 7), 907-909. doi:10.1063/1.1347005

    • NLM

      Schmidt TM, Justo Filho JF, Fazzio A. Stacking fault effects in pure and n-type doped GaAs [Internet]. Applied Physics Letters. 2001 ; 78( 7): 907-909.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1063/1.1347005

    • Vancouver

      Schmidt TM, Justo Filho JF, Fazzio A. Stacking fault effects in pure and n-type doped GaAs [Internet]. Applied Physics Letters. 2001 ; 78( 7): 907-909.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1063/1.1347005

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