Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' (2003)
- Authors:
- USP affiliated author: FAZZIO, ADALBERTO - IF
- School: IF
- Subject: ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- ISSN: 0163-1829
- Volume/Número/Paginação/Ano: v. 67, n. 20, p. 205317/1-205317, 2003
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ABNT
MIWA, R H e VENEZUELA, P e FAZZIO, Adalberto. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, v. 67, n. 20, p. 205317/1-205317, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips. Acesso em: 07 jul. 2022. -
APA
Miwa, R. H., Venezuela, P., & Fazzio, A. (2003). Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, 67( 20), 205317/1-205317. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips -
NLM
Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2022 jul. 07 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips -
Vancouver
Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2022 jul. 07 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips - Theoretical study of natives defects in BN-nanotubes
- Vacancies in amorphous silicon: a first principles study
- Ab initio studyof '90 IND.0' partial dislocation in silicon
- Metal-semiconducting behavior of carbon nanotubes adsorbed on hidrogeneted Si(100) surfaces
- Theoretical study of "NH IND.3" sensors based on "CN IND.x" nanotubes
- Surpresas na física do estado solído
- Spin-texture and magnetic anisotropy of 'CO' adsorbed 'BI'IND. 2''SE' IND. 3' topological insulator surfaces
- Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator
- Topological phases in 2D-graphene-likes materials
- Tuning low-spin to high-spin 'MN' pairs in 2-D 'ZN''O' by injecting holes
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