ReP USP - Resultado da busca

Artigo de periodico
Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy (2001)
Zanelato, G; Pusep, Yuri A ; Galzerani, J C; Lubyshev, D I; González-Borrero, Pedro Pablo
Source: Physica E. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANELATO, G et al. Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy. Physica E, v. 10, n. 4, p. 587-592, 2001Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(00)00289-7. Acesso em: 16 nov. 2024.
APA
Zanelato, G., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., & González-Borrero, P. P. (2001). Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy. Physica E, 10( 4), 587-592. doi:10.1016/s1386-9477(00)00289-7
NLM
Zanelato G, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP. Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy [Internet]. Physica E. 2001 ;10( 4): 587-592.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s1386-9477(00)00289-7
Vancouver
Zanelato G, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP. Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy [Internet]. Physica E. 2001 ;10( 4): 587-592.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s1386-9477(00)00289-7
Artigo de periodico
Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy (2001)
Zanelato, G; Pusep, Yuri A ; Galzerani, J C; Lubyshev, D I; González-Borrero, Pedro Pablo
Source: Journal of Raman Spectroscopy. Unidade: IFSC
Subjects: ESPECTROSCOPIA RAMAN, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANELATO, G et al. Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy. Journal of Raman Spectroscopy, v. 32, p. 857-861, 2001Tradução . . Disponível em: https://doi.org/10.1002/jrs.774. Acesso em: 16 nov. 2024.
APA
Zanelato, G., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., & González-Borrero, P. P. (2001). Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy. Journal of Raman Spectroscopy, 32, 857-861. doi:10.1002/jrs.774
NLM
Zanelato G, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP. Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy [Internet]. Journal of Raman Spectroscopy. 2001 ; 32 857-861.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1002/jrs.774
Vancouver
Zanelato G, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP. Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy [Internet]. Journal of Raman Spectroscopy. 2001 ; 32 857-861.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1002/jrs.774
Relatorio tecnico
Interference effects in nonplanar wires with a two-dimensional electron gas (1999)
Basmaji, Pierre; Gusev, Guennadii Michailovich; Gonzales-Borrero, Pedro P; Lubyshev, D I; Silva, M P A da; La Scala Junior, N; Maude, D K; Portal, J C
Unidades: IFSC, IF
Subjects: MATÉRIA CONDENSADA, FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre et al. Interference effects in nonplanar wires with a two-dimensional electron gas. . São Paulo: IFUSP. Disponível em: http://publica-sbi.if.usp.br/PDFs/pd1370.pdf. Acesso em: 16 nov. 2024. , 1999
APA
Basmaji, P., Gusev, G. M., Gonzales-Borrero, P. P., Lubyshev, D. I., Silva, M. P. A. da, La Scala Junior, N., et al. (1999). Interference effects in nonplanar wires with a two-dimensional electron gas. São Paulo: IFUSP. Recuperado de http://publica-sbi.if.usp.br/PDFs/pd1370.pdf
NLM
Basmaji P, Gusev GM, Gonzales-Borrero PP, Lubyshev DI, Silva MPA da, La Scala Junior N, Maude DK, Portal JC. Interference effects in nonplanar wires with a two-dimensional electron gas [Internet]. 1999 ;[citado 2024 nov. 16 ] Available from: http://publica-sbi.if.usp.br/PDFs/pd1370.pdf
Vancouver
Basmaji P, Gusev GM, Gonzales-Borrero PP, Lubyshev DI, Silva MPA da, La Scala Junior N, Maude DK, Portal JC. Interference effects in nonplanar wires with a two-dimensional electron gas [Internet]. 1999 ;[citado 2024 nov. 16 ] Available from: http://publica-sbi.if.usp.br/PDFs/pd1370.pdf
Artigo de periodico
Magneto-oscillations in a trapezoidal two-dimensional electron gas grown over GaAs wires (1998)
Gusev, G M; La Scala, N; Lubyshev, D I; González-Borrero, P P; Silva, M A P; Basmaji, Pierre; Rossi, J C; Portal, J C
Source: Superlattices and Microstructures. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Magneto-oscillations in a trapezoidal two-dimensional electron gas grown over GaAs wires. Superlattices and Microstructures, v. 24, n. 3, p. 197-291, 1998Tradução . . Disponível em: https://doi.org/10.1006/spmi.1996.0343. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., La Scala, N., Lubyshev, D. I., González-Borrero, P. P., Silva, M. A. P., Basmaji, P., et al. (1998). Magneto-oscillations in a trapezoidal two-dimensional electron gas grown over GaAs wires. Superlattices and Microstructures, 24( 3), 197-291. doi:10.1006/spmi.1996.0343
NLM
Gusev GM, La Scala N, Lubyshev DI, González-Borrero PP, Silva MAP, Basmaji P, Rossi JC, Portal JC. Magneto-oscillations in a trapezoidal two-dimensional electron gas grown over GaAs wires [Internet]. Superlattices and Microstructures. 1998 ; 24( 3): 197-291.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1006/spmi.1996.0343
Vancouver
Gusev GM, La Scala N, Lubyshev DI, González-Borrero PP, Silva MAP, Basmaji P, Rossi JC, Portal JC. Magneto-oscillations in a trapezoidal two-dimensional electron gas grown over GaAs wires [Internet]. Superlattices and Microstructures. 1998 ; 24( 3): 197-291.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1006/spmi.1996.0343
Artigo de periodico
Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates (1998)
Petitprez, E; González-Borrero, P P; Lubyshev, D I; Marega Junior, Euclydes ; Basmaji, Pierre
Source: Microlectronic Engineering. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PETITPREZ, E et al. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, v. 43, p. 59-65, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(98)00221-4. Acesso em: 16 nov. 2024.
APA
Petitprez, E., González-Borrero, P. P., Lubyshev, D. I., Marega Junior, E., & Basmaji, P. (1998). Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates. Microlectronic Engineering, 43, 59-65. doi:10.1016/s0167-9317(98)00221-4
NLM
Petitprez E, González-Borrero PP, Lubyshev DI, Marega Junior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4
Vancouver
Petitprez E, González-Borrero PP, Lubyshev DI, Marega Junior E, Basmaji P. Optical properties of vertically stacked InAs island layers grown on (311)A/B and (001) GaAs substrates [Internet]. Microlectronic Engineering. 1998 ; 43 59-65.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0167-9317(98)00221-4
Trabalho de evento
Asymmetry of the Hall conductance fluctuations in a random magnetic field (1998)
Nastaushev, Yu V; Gusev, G M; Bykov, A. A.; Lubyshev, D I; Maude, D K; Portal, J C; Gennser, U; Basmaji, Pierre
Conference titles: International Symposium Nanostructures: Physics and Technology. Unidade: IFSC
Subjects: SEMICONDUTORES, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NASTAUSHEV, Yu V et al. Asymmetry of the Hall conductance fluctuations in a random magnetic field. 1998, Anais.. Saint Petersburg: Ioffe Institute, 1998. . Acesso em: 16 nov. 2024.
APA
Nastaushev, Y. V., Gusev, G. M., Bykov, A. A., Lubyshev, D. I., Maude, D. K., Portal, J. C., et al. (1998). Asymmetry of the Hall conductance fluctuations in a random magnetic field. In . Saint Petersburg: Ioffe Institute.
NLM
Nastaushev YV, Gusev GM, Bykov AA, Lubyshev DI, Maude DK, Portal JC, Gennser U, Basmaji P. Asymmetry of the Hall conductance fluctuations in a random magnetic field. 1998 ;[citado 2024 nov. 16 ]
Vancouver
Nastaushev YV, Gusev GM, Bykov AA, Lubyshev DI, Maude DK, Portal JC, Gennser U, Basmaji P. Asymmetry of the Hall conductance fluctuations in a random magnetic field. 1998 ;[citado 2024 nov. 16 ]
Artigo de periodico
Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces (1998)
Marega Junior, Euclydes ; Libardi, A L; Lubyshev, D I; González-Borrero, P P; Basmaji, Pierre
Source: Microlectronic Engineering. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAREGA JUNIOR, Euclydes et al. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. Microlectronic Engineering, v. 43, p. 295-299, 1998Tradução . . Disponível em: https://doi.org/10.1016/s0167-9317(98)00177-4. Acesso em: 16 nov. 2024.
APA
Marega Junior, E., Libardi, A. L., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1998). Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. Microlectronic Engineering, 43, 295-299. doi:10.1016/s0167-9317(98)00177-4
NLM
Marega Junior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces [Internet]. Microlectronic Engineering. 1998 ; 43 295-299.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0167-9317(98)00177-4
Vancouver
Marega Junior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces [Internet]. Microlectronic Engineering. 1998 ; 43 295-299.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1016/s0167-9317(98)00177-4
Trabalho de evento-anais periodico
Interference effects in nonplanar wires with a two-dimensional electron gas (1998)
Basmaji, Pierre; Gusev, G M; La Scala Junior, N; González-Borrero, Pedro Pablo; Lubyshev, D I; Silva, M P A da; Maude, D K; Portal, J C; Pusep, Yuri A ; Rossi, J C
Source: Physics of Low-Dimensional Structures. Conference titles: International Conference on Superlattices, Microructures and Microdevices. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre et al. Interference effects in nonplanar wires with a two-dimensional electron gas. Physics of Low-Dimensional Structures. Moscou: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 16 nov. 2024. , 1998
APA
Basmaji, P., Gusev, G. M., La Scala Junior, N., González-Borrero, P. P., Lubyshev, D. I., Silva, M. P. A. da, et al. (1998). Interference effects in nonplanar wires with a two-dimensional electron gas. Physics of Low-Dimensional Structures. Moscou: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Basmaji P, Gusev GM, La Scala Junior N, González-Borrero PP, Lubyshev DI, Silva MPA da, Maude DK, Portal JC, Pusep YA, Rossi JC. Interference effects in nonplanar wires with a two-dimensional electron gas. Physics of Low-Dimensional Structures. 1998 ; 1-2 187-192.[citado 2024 nov. 16 ]
Vancouver
Basmaji P, Gusev GM, La Scala Junior N, González-Borrero PP, Lubyshev DI, Silva MPA da, Maude DK, Portal JC, Pusep YA, Rossi JC. Interference effects in nonplanar wires with a two-dimensional electron gas. Physics of Low-Dimensional Structures. 1998 ; 1-2 187-192.[citado 2024 nov. 16 ]
Artigo de periodico
Percolation network in a smooth artificial potential (1998)
Gusev, G M; Gennser, U; Kleber, X; Maude, D K; Portal, J C; Lubyshev, D I; Basmaji, Pierre; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Nastaushev, Yu V
Source: Physical Review B. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, CIRCUITOS ELETRÔNICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Percolation network in a smooth artificial potential. Physical Review B, v. 58, n. 8, p. 4636-4643, 1998Tradução . . Disponível em: https://doi.org/10.1103/physrevb.58.4636. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Gennser, U., Kleber, X., Maude, D. K., Portal, J. C., Lubyshev, D. I., et al. (1998). Percolation network in a smooth artificial potential. Physical Review B, 58( 8), 4636-4643. doi:10.1103/physrevb.58.4636
NLM
Gusev GM, Gennser U, Kleber X, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva M de AP da, Rossi JC, Nastaushev YV. Percolation network in a smooth artificial potential [Internet]. Physical Review B. 1998 ; 58( 8): 4636-4643.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/physrevb.58.4636
Vancouver
Gusev GM, Gennser U, Kleber X, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva M de AP da, Rossi JC, Nastaushev YV. Percolation network in a smooth artificial potential [Internet]. Physical Review B. 1998 ; 58( 8): 4636-4643.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/physrevb.58.4636
Artigo de periodico
Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates (1998)
González-Borrero, Pedro Pablo; Lubyshev, D I; Marega Junior, Euclydes ; Petitprez, E; Basmaji, Pierre
Source: Superlattices and Microstructures. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GONZÁLEZ-BORRERO, Pedro Pablo et al. Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates. Superlattices and Microstructures, v. 23, n. 2, p. 365-368, 1998Tradução . . Disponível em: https://doi.org/10.1006/spmi.1996.0353. Acesso em: 16 nov. 2024.
APA
González-Borrero, P. P., Lubyshev, D. I., Marega Junior, E., Petitprez, E., & Basmaji, P. (1998). Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates. Superlattices and Microstructures, 23( 2), 365-368. doi:10.1006/spmi.1996.0353
NLM
González-Borrero PP, Lubyshev DI, Marega Junior E, Petitprez E, Basmaji P. Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates [Internet]. Superlattices and Microstructures. 1998 ; 23( 2): 365-368.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1006/spmi.1996.0353
Vancouver
González-Borrero PP, Lubyshev DI, Marega Junior E, Petitprez E, Basmaji P. Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates [Internet]. Superlattices and Microstructures. 1998 ; 23( 2): 365-368.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1006/spmi.1996.0353
Artigo de periodico
Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates (1997)
Gonzalez-Borrero, Pedro P; Lubyshev, D I; Petitprez, E; La Scala Junior, Newton; Marega Junior, Euclydes ; Basmaji, Pierre
Source: Brazilian Journal of Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GONZALEZ-BORRERO, Pedro P et al. Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates. Brazilian Journal of Physics, v. 27, n. 2, p. 65-75, 1997Tradução . . Acesso em: 16 nov. 2024.
APA
Gonzalez-Borrero, P. P., Lubyshev, D. I., Petitprez, E., La Scala Junior, N., Marega Junior, E., & Basmaji, P. (1997). Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates. Brazilian Journal of Physics, 27( 2), 65-75.
NLM
Gonzalez-Borrero PP, Lubyshev DI, Petitprez E, La Scala Junior N, Marega Junior E, Basmaji P. Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates. Brazilian Journal of Physics. 1997 ; 27( 2): 65-75.[citado 2024 nov. 16 ]
Vancouver
Gonzalez-Borrero PP, Lubyshev DI, Petitprez E, La Scala Junior N, Marega Junior E, Basmaji P. Optical properties of natural 'In IND.X'Ga IND.1'-XAs quantum dots grown on high-index GaAs substrates. Brazilian Journal of Physics. 1997 ; 27( 2): 65-75.[citado 2024 nov. 16 ]
Artigo de periodico
Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates (1997)
González-Borrero, P P; Marega Junior, Euclydes ; Lubyshev, D I; Petitprez, E; Basmaji, Pierre
Source: Superlattices and Microstructures. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GONZÁLEZ-BORRERO, P P et al. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures, v. 22, n. 1 , p. 85-89, 1997Tradução . . Acesso em: 16 nov. 2024.
APA
González-Borrero, P. P., Marega Junior, E., Lubyshev, D. I., Petitprez, E., & Basmaji, P. (1997). Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures, 22( 1 ), 85-89.
NLM
González-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures. 1997 ; 22( 1 ): 85-89.[citado 2024 nov. 16 ]
Vancouver
González-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates. Superlattices and Microstructures. 1997 ; 22( 1 ): 85-89.[citado 2024 nov. 16 ]
Trabalho de evento-resumo
Interference effects in a nonplanar wires with a two-dimensional electron GAS (1997)
Basmaji, Pierre; Gusev, G M; La Scala Junior, N; Maude, D K; Portal, J C; Lubyshev, D I; Silva, M P A; González-Borrero, P P; Rossi, J C
Source: Abstracts. Conference titles: International Conference on Superlattices, Microructures, and Microdevices. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre et al. Interference effects in a nonplanar wires with a two-dimensional electron GAS. 1997, Anais.. Lincoln: University of Nebraska, 1997. . Acesso em: 16 nov. 2024.
APA
Basmaji, P., Gusev, G. M., La Scala Junior, N., Maude, D. K., Portal, J. C., Lubyshev, D. I., et al. (1997). Interference effects in a nonplanar wires with a two-dimensional electron GAS. In Abstracts. Lincoln: University of Nebraska.
NLM
Basmaji P, Gusev GM, La Scala Junior N, Maude DK, Portal JC, Lubyshev DI, Silva MPA, González-Borrero PP, Rossi JC. Interference effects in a nonplanar wires with a two-dimensional electron GAS. Abstracts. 1997 ;[citado 2024 nov. 16 ]
Vancouver
Basmaji P, Gusev GM, La Scala Junior N, Maude DK, Portal JC, Lubyshev DI, Silva MPA, González-Borrero PP, Rossi JC. Interference effects in a nonplanar wires with a two-dimensional electron GAS. Abstracts. 1997 ;[citado 2024 nov. 16 ]
Trabalho de evento-resumo
Universal diagonal and hall conductance fluctuations in a random magnetic field (1997)
Gusev, G M; Basmaji, Pierre; Kleber, X; Gennser, U; Maude, D K; Portal, J C; Lubyshev, D I; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Nastaushev, Y V
Source: Program and Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Universal diagonal and hall conductance fluctuations in a random magnetic field. 1997, Anais.. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Basmaji, P., Kleber, X., Gennser, U., Maude, D. K., Portal, J. C., et al. (1997). Universal diagonal and hall conductance fluctuations in a random magnetic field. In Program and Abstracts. Águas de Lindóia: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Gusev GM, Basmaji P, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV. Universal diagonal and hall conductance fluctuations in a random magnetic field. Program and Abstracts. 1997 ;[citado 2024 nov. 16 ]
Vancouver
Gusev GM, Basmaji P, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV. Universal diagonal and hall conductance fluctuations in a random magnetic field. Program and Abstracts. 1997 ;[citado 2024 nov. 16 ]
Trabalho de evento-resumo
Universal conductance fluctuations in a nonplanar wires with a two-dimensional electron gas (1997)
Rossi, J C; Gusev, G M; La Scala Júnior, N; Lubyshev, D I; Basmaji, Pierre; Portal, J C; Maude, D K
Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ROSSI, J C et al. Universal conductance fluctuations in a nonplanar wires with a two-dimensional electron gas. 1997, Anais.. São Paulo: Sociedade Brasileira de Física, 1997. . Acesso em: 16 nov. 2024.
APA
Rossi, J. C., Gusev, G. M., La Scala Júnior, N., Lubyshev, D. I., Basmaji, P., Portal, J. C., & Maude, D. K. (1997). Universal conductance fluctuations in a nonplanar wires with a two-dimensional electron gas. In . São Paulo: Sociedade Brasileira de Física.
NLM
Rossi JC, Gusev GM, La Scala Júnior N, Lubyshev DI, Basmaji P, Portal JC, Maude DK. Universal conductance fluctuations in a nonplanar wires with a two-dimensional electron gas. 1997 ;[citado 2024 nov. 16 ]
Vancouver
Rossi JC, Gusev GM, La Scala Júnior N, Lubyshev DI, Basmaji P, Portal JC, Maude DK. Universal conductance fluctuations in a nonplanar wires with a two-dimensional electron gas. 1997 ;[citado 2024 nov. 16 ]
Trabalho de evento
Large negative magnetoresistance in the insulating regime of a two dimensional electron gas with an artificial potential (1997)
Gusev, G M; Kleber, X; Gennser, U; Maude, D K; Portal, J C; Lubyshev, D I; Basmaji, Pierre; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Nastaushev, Yu V
Conference titles: International Conference High Magnetic Fields in the Physics of Semiconductors II. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Large negative magnetoresistance in the insulating regime of a two dimensional electron gas with an artificial potential. 1997, Anais.. Singapore: World Scientific, 1997. . Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Kleber, X., Gennser, U., Maude, D. K., Portal, J. C., Lubyshev, D. I., et al. (1997). Large negative magnetoresistance in the insulating regime of a two dimensional electron gas with an artificial potential. In . Singapore: World Scientific.
NLM
Gusev GM, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva M de AP da, Rossi JC, Nastaushev YV. Large negative magnetoresistance in the insulating regime of a two dimensional electron gas with an artificial potential. 1997 ;[citado 2024 nov. 16 ]
Vancouver
Gusev GM, Kleber X, Gennser U, Maude DK, Portal JC, Lubyshev DI, Basmaji P, Silva M de AP da, Rossi JC, Nastaushev YV. Large negative magnetoresistance in the insulating regime of a two dimensional electron gas with an artificial potential. 1997 ;[citado 2024 nov. 16 ]
Artigo de periodico
Characterization of GaAs wire crystals grown on porous silicon by Raman scattering (1997)
Silva, S W da; Lubyshev, D I; Basmaji, Pierre; Pusep, Yuri A ; Pizani, Paulo Sérgio; Galzerani, J C; Katiyar, R S; Morell, G
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, S W da et al. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, v. 82, n. 12, p. 6247-6250, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.366511. Acesso em: 16 nov. 2024.
APA
Silva, S. W. da, Lubyshev, D. I., Basmaji, P., Pusep, Y. A., Pizani, P. S., Galzerani, J. C., et al. (1997). Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, 82( 12), 6247-6250. doi:10.1063/1.366511
NLM
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.366511
Vancouver
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1063/1.366511
Trabalho de evento-resumo
Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces (1997)
Marega Junior, Euclydes ; Libardi, A L; Lubyshev, D I; González-Borrero, Pedro Pablo; Basmaji, Pierre
Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAREGA JUNIOR, Euclydes et al. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. 1997, Anais.. Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo, 1997. . Acesso em: 16 nov. 2024.
APA
Marega Junior, E., Libardi, A. L., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1997). Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. In . Lisboa: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Marega Junior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. 1997 ;[citado 2024 nov. 16 ]
Vancouver
Marega Junior E, Libardi AL, Lubyshev DI, González-Borrero PP, Basmaji P. Exciton localization in GaAs/AlAs superlattices grown on high-index oriented surfaces. 1997 ;[citado 2024 nov. 16 ]
Trabalho de evento-resumo
Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates (1997)
Petitprez, E; González-Borrero, P P; Lubyshev, D I; La Scala Júnior, Newton; Marega Junior, Euclydes ; Basmaji, Pierre; Mazel, A; Fourmeaux, R; Dorignoc, D
Conference titles: International Conference on Superlattices, Microructures, and Microdevices. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PETITPREZ, E et al. Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1997, Anais.. Lincoln: University of Nebraska, 1997. . Acesso em: 16 nov. 2024.
APA
Petitprez, E., González-Borrero, P. P., Lubyshev, D. I., La Scala Júnior, N., Marega Junior, E., Basmaji, P., et al. (1997). Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. In . Lincoln: University of Nebraska.
NLM
Petitprez E, González-Borrero PP, Lubyshev DI, La Scala Júnior N, Marega Junior E, Basmaji P, Mazel A, Fourmeaux R, Dorignoc D. Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1997 ;[citado 2024 nov. 16 ]
Vancouver
Petitprez E, González-Borrero PP, Lubyshev DI, La Scala Júnior N, Marega Junior E, Basmaji P, Mazel A, Fourmeaux R, Dorignoc D. Optical properties of vertically stacked InGaAs quantum dots layers grown on (311)A/B and (001) GaAs substrates. 1997 ;[citado 2024 nov. 16 ]
Artigo de periodico
Photoluminescence of excitons in differently oriented self-assembled InAs quantum dots (1997)
Pusep, Yuri A ; Silva, S W; Galzerani, J C; Lubyshev, D I; Gonzalez-Borrero, Pedro P; Marega Junior, Euclydes ; Petitprez, E; La Scala Junior, Newton; Basmaji, Pierre
Source: Physica Status Solidi A. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, CIRCUITOS ELETRÔNICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Photoluminescence of excitons in differently oriented self-assembled InAs quantum dots. Physica Status Solidi A, v. 164, p. 455-457, 1997Tradução . . Acesso em: 16 nov. 2024.
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., Gonzalez-Borrero, P. P., Marega Junior, E., et al. (1997). Photoluminescence of excitons in differently oriented self-assembled InAs quantum dots. Physica Status Solidi A, 164, 455-457.
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Gonzalez-Borrero PP, Marega Junior E, Petitprez E, La Scala Junior N, Basmaji P. Photoluminescence of excitons in differently oriented self-assembled InAs quantum dots. Physica Status Solidi A. 1997 ; 164 455-457.[citado 2024 nov. 16 ]
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Gonzalez-Borrero PP, Marega Junior E, Petitprez E, La Scala Junior N, Basmaji P. Photoluminescence of excitons in differently oriented self-assembled InAs quantum dots. Physica Status Solidi A. 1997 ; 164 455-457.[citado 2024 nov. 16 ]

USP Schools

ReP

Filtros

Document Types

Authors

USP affiliated authors

Date published

Subjects

Source title

Publisher

Conference titles

Countries/Territories