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Trabalho de evento-anais periodico
Valley splitting and g-factor in A1As quantum wells (2009)
Duarte, Cesário Antonio; Gusev, Guennadii Michailovich; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
DUARTE, Cesário Antonio et al. Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf. Acesso em: 10 nov. 2024. , 2009
APA
Duarte, C. A., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
NLM
Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 nov. 10 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
Vancouver
Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 nov. 10 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
Trabalho de evento-anais periodico
Quantum hall ferromagneti in a double well with vanishing g-factor (2009)
Gomez Armas, Luis Enrique ; Gusev, Guennadii Michailovich; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
GOMEZ ARMAS, Luis Enrique et al. Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf. Acesso em: 10 nov. 2024. , 2009
APA
Gomez Armas, L. E., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
NLM
Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 nov. 10 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
Vancouver
Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 nov. 10 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
Trabalho de evento-anais periodico
Magnetoresistance oscillations in double quantum wells under microwave irradiation (2009)
Wiedmann, S; Gusev, Guennadii Michailovich; Raichev, O E; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
WIEDMANN, S et al. Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf. Acesso em: 10 nov. 2024. , 2009
APA
Wiedmann, S., Gusev, G. M., Raichev, O. E., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
NLM
Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 nov. 10 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
Vancouver
Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 nov. 10 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
Artigo de periodico
Nonlinear transport and oscillating magnetoresistance in double quantum wells (2009)
Mammani, Niko Churata; Gusev, Guennadii Michailovich; Raichev, O E; Lamas, T. E.; Bakarov, A K
Source: Physical Review B. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, CAMPO MAGNÉTICO, POÇOS QUÂNTICOS
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ABNT
MAMMANI, Niko Churata et al. Nonlinear transport and oscillating magnetoresistance in double quantum wells. Physical Review B, v. 80, n. 7, p. 075308-1/075308-8, 2009Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000007075308000001&idtype=cvips&prog=normal. Acesso em: 10 nov. 2024.
APA
Mammani, N. C., Gusev, G. M., Raichev, O. E., Lamas, T. E., & Bakarov, A. K. (2009). Nonlinear transport and oscillating magnetoresistance in double quantum wells. Physical Review B, 80( 7), 075308-1/075308-8. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000007075308000001&idtype=cvips&prog=normal
NLM
Mammani NC, Gusev GM, Raichev OE, Lamas TE, Bakarov AK. Nonlinear transport and oscillating magnetoresistance in double quantum wells [Internet]. Physical Review B. 2009 ; 80( 7): 075308-1/075308-8.[citado 2024 nov. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000007075308000001&idtype=cvips&prog=normal
Vancouver
Mammani NC, Gusev GM, Raichev OE, Lamas TE, Bakarov AK. Nonlinear transport and oscillating magnetoresistance in double quantum wells [Internet]. Physical Review B. 2009 ; 80( 7): 075308-1/075308-8.[citado 2024 nov. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000007075308000001&idtype=cvips&prog=normal
Artigo de periodico
Landau-level crossing in two-subband systems in a tilted magnetic field (2007)
Duarte, C A; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: Physical Review B. Unidade: IF
Subjects: POÇOS QUÂNTICOS, EFEITO HALL
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ABNT
DUARTE, C A et al. Landau-level crossing in two-subband systems in a tilted magnetic field. Physical Review B, v. 76, n. 7, p. 075346/1-075346/8, 2007Tradução . . Disponível em: https://doi.org/10.1103/physrevb.76.075346. Acesso em: 10 nov. 2024.
APA
Duarte, C. A., Gusev, G. M., Quivy, A. A., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2007). Landau-level crossing in two-subband systems in a tilted magnetic field. Physical Review B, 76( 7), 075346/1-075346/8. doi:10.1103/physrevb.76.075346
NLM
Duarte CA, Gusev GM, Quivy AA, Lamas TE, Bakarov AK, Portal JC. Landau-level crossing in two-subband systems in a tilted magnetic field [Internet]. Physical Review B. 2007 ; 76( 7): 075346/1-075346/8.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1103/physrevb.76.075346
Vancouver
Duarte CA, Gusev GM, Quivy AA, Lamas TE, Bakarov AK, Portal JC. Landau-level crossing in two-subband systems in a tilted magnetic field [Internet]. Physical Review B. 2007 ; 76( 7): 075346/1-075346/8.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1103/physrevb.76.075346
Artigo de periodico
Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system (2007)
Freitas, Raul de Oliveira; Lamas, T. E.; Quivy, A. A.; Morelhão, Sérgio Luiz
Source: Physica Status Solidi A - Application and Materials Science. Unidade: IF
Assunto: SUPERFÍCIE FÍSICA
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ABNT
FREITAS, Raul de Oliveira et al. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system. Physica Status Solidi A - Application and Materials Science, v. 204, n. 8, p. 2548-2454, 2007Tradução . . Disponível em: https://doi.org/10.1002/pssa.200675673. Acesso em: 10 nov. 2024.
APA
Freitas, R. de O., Lamas, T. E., Quivy, A. A., & Morelhão, S. L. (2007). Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system. Physica Status Solidi A - Application and Materials Science, 204( 8), 2548-2454. doi:10.1002/pssa.200675673
NLM
Freitas R de O, Lamas TE, Quivy AA, Morelhão SL. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system [Internet]. Physica Status Solidi A - Application and Materials Science. 2007 ; 204( 8): 2548-2454.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1002/pssa.200675673
Vancouver
Freitas R de O, Lamas TE, Quivy AA, Morelhão SL. Synchrotron x-ray renninger scanning for studying strain in InAs/GaAs quantum dot system [Internet]. Physica Status Solidi A - Application and Materials Science. 2007 ; 204( 8): 2548-2454.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1002/pssa.200675673
Artigo de periodico
Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells (2007)
Ortiz de Zevallos, Angela M; Cano, Nilo Francisco; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Portal, J C
Source: Physical Review B. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
ORTIZ DE ZEVALLOS, Angela M et al. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells. Physical Review B, v. 75, n. 20, p. 205324/1-205324/8, 2007Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal. Acesso em: 10 nov. 2024.
APA
Ortiz de Zevallos, A. M., Cano, N. F., Gusev, G. M., Quivy, A. A., Lamas, T. E., & Portal, J. C. (2007). Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells. Physical Review B, 75( 20), 205324/1-205324/8. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal
NLM
Ortiz de Zevallos AM, Cano NF, Gusev GM, Quivy AA, Lamas TE, Portal JC. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells [Internet]. Physical Review B. 2007 ; 75( 20): 205324/1-205324/8.[citado 2024 nov. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal
Vancouver
Ortiz de Zevallos AM, Cano NF, Gusev GM, Quivy AA, Lamas TE, Portal JC. Enhanced Hall slope in wide 'Al IND.x''GaIND.x-1' As parabolic wells [Internet]. Physical Review B. 2007 ; 75( 20): 205324/1-205324/8.[citado 2024 nov. 10 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000075000020205324000001&idtype=cvips&prog=normal
Artigo de periodico
Many-body effects in wide parabolic AlGaAs quantum wells (2007)
Tabata, A; Martins, M R; Oliveira, J B B; Lamas, T. E.; Duarte, C A; Silva, Euzi Conceicao Fernandes da; Gusev, Guennadii Michailovich
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, ESPALHAMENTO
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ABNT
TABATA, A et al. Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, v. 102, n. 9, p. 093715/1-093715/5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2809418. Acesso em: 10 nov. 2024.
APA
Tabata, A., Martins, M. R., Oliveira, J. B. B., Lamas, T. E., Duarte, C. A., Silva, E. C. F. da, & Gusev, G. M. (2007). Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, 102( 9), 093715/1-093715/5. doi:10.1063/1.2809418
NLM
Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1063/1.2809418
Vancouver
Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1063/1.2809418
Artigo de periodico
Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells (2007)
Cunha, J F R; Silva, S W da; Morais, P C; Lamas, T. E.; Quivy, A. A.
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
CUNHA, J F R et al. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, v. 102, n. 4, p. 0437048/1-043704/6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2769963. Acesso em: 10 nov. 2024.
APA
Cunha, J. F. R., Silva, S. W. da, Morais, P. C., Lamas, T. E., & Quivy, A. A. (2007). Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, 102( 4), 0437048/1-043704/6. doi:10.1063/1.2769963
NLM
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1063/1.2769963
Vancouver
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1063/1.2769963
Artigo de periodico
The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy (2007)
Rudno-Rudziñski, W; Sek, G; Misiewicz, J; Lamas, T. E.; Quivy, A. A.
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, EFEITO MOSSBAUER, LASER
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ABNT
RUDNO-RUDZIÑSKI, W et al. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, v. 101, n. 7, p. 0735018/1-073518/4, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2714686. Acesso em: 10 nov. 2024.
APA
Rudno-Rudziñski, W., Sek, G., Misiewicz, J., Lamas, T. E., & Quivy, A. A. (2007). The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, 101( 7), 0735018/1-073518/4. doi:10.1063/1.2714686
NLM
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1063/1.2714686
Vancouver
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1063/1.2714686
Artigo de periodico
Electric field controlled g-factor in parabolic well determined by transport measurements (2006)
Duarte, Cesário Antonio; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Portal, J C
Source: Physica E-Low-Dimensional Systems & Nanostructures. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
DUARTE, Cesário Antonio et al. Electric field controlled g-factor in parabolic well determined by transport measurements. Physica E-Low-Dimensional Systems & Nanostructures, v. 34, n. 1-2, p. 329-332, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2006.03.086. Acesso em: 10 nov. 2024.
APA
Duarte, C. A., Gusev, G. M., Quivy, A. A., Lamas, T. E., & Portal, J. C. (2006). Electric field controlled g-factor in parabolic well determined by transport measurements. Physica E-Low-Dimensional Systems & Nanostructures, 34( 1-2), 329-332. doi:10.1016/j.physe.2006.03.086
NLM
Duarte CA, Gusev GM, Quivy AA, Lamas TE, Portal JC. Electric field controlled g-factor in parabolic well determined by transport measurements [Internet]. Physica E-Low-Dimensional Systems & Nanostructures. 2006 ; 34( 1-2): 329-332.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.physe.2006.03.086
Vancouver
Duarte CA, Gusev GM, Quivy AA, Lamas TE, Portal JC. Electric field controlled g-factor in parabolic well determined by transport measurements [Internet]. Physica E-Low-Dimensional Systems & Nanostructures. 2006 ; 34( 1-2): 329-332.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.physe.2006.03.086
Artigo de periodico
Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots (2006)
Gusev, Guennadii Michailovich; Sotomayor, N M; Seabra, Antonio Carlos ; Quivy, A. A.; Lamas, T. E.; Portal, J C
Source: Physica E-Low-Dimensional Systems & Nanostructures. Unidades: IF, EP
Subjects: POÇOS QUÂNTICOS, EFEITO HALL
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ABNT
GUSEV, Guennadii Michailovich et al. Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots. Physica E-Low-Dimensional Systems & Nanostructures, v. 34, n. 1-2, p. 504-507, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2006.03.097. Acesso em: 10 nov. 2024.
APA
Gusev, G. M., Sotomayor, N. M., Seabra, A. C., Quivy, A. A., Lamas, T. E., & Portal, J. C. (2006). Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots. Physica E-Low-Dimensional Systems & Nanostructures, 34( 1-2), 504-507. doi:10.1016/j.physe.2006.03.097
NLM
Gusev GM, Sotomayor NM, Seabra AC, Quivy AA, Lamas TE, Portal JC. Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots [Internet]. Physica E-Low-Dimensional Systems & Nanostructures. 2006 ; 34( 1-2): 504-507.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.physe.2006.03.097
Vancouver
Gusev GM, Sotomayor NM, Seabra AC, Quivy AA, Lamas TE, Portal JC. Quantum half ferromagnet in a two-dimensional electron gas coupled with quantum dots [Internet]. Physica E-Low-Dimensional Systems & Nanostructures. 2006 ; 34( 1-2): 504-507.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.physe.2006.03.097
Artigo de periodico
Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant (2005)
Lamas, T. E.; Quivy, A. A.; Martini, S; Silva, M J da; Leite, J. R.
Source: Thin Solid Films. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MATERIAIS, EFEITO HALL, FOTOLUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS
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ABNT
LAMAS, T. E. et al. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, v. 474, n. 1-2, p. 25-30, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.tsf.2004.08.004. Acesso em: 10 nov. 2024.
APA
Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2005). Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant. Thin Solid Films, 474( 1-2), 25-30. doi:10.1016/j.tsf.2004.08.004
NLM
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
Vancouver
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant [Internet]. Thin Solid Films. 2005 ; 474( 1-2): 25-30.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.tsf.2004.08.004
Artigo de periodico
Large InAs/GaAs quantum dots with an optical response in the long-wavelength region (2005)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, v. 278, p. 103-107, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2004.12.118. Acesso em: 10 nov. 2024.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2005). Large InAs/GaAs quantum dots with an optical response in the long-wavelength region. Journal of Crystal Growth, 278, 103-107. doi:10.1016/j.jcrysgro.2004.12.118
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots with an optical response in the long-wavelength region [Internet]. Journal of Crystal Growth. 2005 ; 278 103-107.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.jcrysgro.2004.12.118
Artigo de periodico
High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates (2005)
Lamas, T. E.; Quivy, A. A.; Sérgio, C. S.; Gusev, Guennadii Michailovich; Portal, J C
Source: Journal of Applied Physics. Unidade: IF
Assunto: POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LAMAS, T. E. et al. High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates. Journal of Applied Physics, v. 97, p. 076107, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1888041. Acesso em: 10 nov. 2024.
APA
Lamas, T. E., Quivy, A. A., Sérgio, C. S., Gusev, G. M., & Portal, J. C. (2005). High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates. Journal of Applied Physics, 97, 076107. doi:10.1063/1.1888041
NLM
Lamas TE, Quivy AA, Sérgio CS, Gusev GM, Portal JC. High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates [Internet]. Journal of Applied Physics. 2005 ; 97 076107.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1063/1.1888041
Vancouver
Lamas TE, Quivy AA, Sérgio CS, Gusev GM, Portal JC. High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates [Internet]. Journal of Applied Physics. 2005 ; 97 076107.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1063/1.1888041
Artigo de periodico
Charge density wave instability in a parabolic well in perpendicular magnetic field (2004)
Gousev, Guennadii Michailovich; Sergio, C. S.; Quivy, A. A.; Lamas, T. E.; Leite, J. R.; Estibals, O.; Portal, J. C.
Source: Physica E - Low Dimensional Systems & Nanostructures. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOUSEV, Guennadii Michailovich et al. Charge density wave instability in a parabolic well in perpendicular magnetic field. Physica E - Low Dimensional Systems & Nanostructures, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf. Acesso em: 10 nov. 2024.
APA
Gousev, G. M., Sergio, C. S., Quivy, A. A., Lamas, T. E., Leite, J. R., Estibals, O., & Portal, J. C. (2004). Charge density wave instability in a parabolic well in perpendicular magnetic field. Physica E - Low Dimensional Systems & Nanostructures. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf
NLM
Gousev GM, Sergio CS, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Charge density wave instability in a parabolic well in perpendicular magnetic field [Internet]. Physica E - Low Dimensional Systems & Nanostructures. 2004 ;[citado 2024 nov. 10 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf
Vancouver
Gousev GM, Sergio CS, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Charge density wave instability in a parabolic well in perpendicular magnetic field [Internet]. Physica E - Low Dimensional Systems & Nanostructures. 2004 ;[citado 2024 nov. 10 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf
Artigo de periodico
Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields (2004)
Oliveira, R F; Henriques, André Bohomoletz; Lamas, T. E.; Quivy, A. A.; Abramof, E
Source: Journal of Physics D. Unidade: IF
Subjects: MATÉRIA CONDENSADA, CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLIVEIRA, R F et al. Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields. Journal of Physics D, v. 37, n. 21, p. 2949-2953, 2004Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/37/21/002. Acesso em: 10 nov. 2024.
APA
Oliveira, R. F., Henriques, A. B., Lamas, T. E., Quivy, A. A., & Abramof, E. (2004). Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields. Journal of Physics D, 37( 21), 2949-2953. doi:10.1088/0022-3727/37/21/002
NLM
Oliveira RF, Henriques AB, Lamas TE, Quivy AA, Abramof E. Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields [Internet]. Journal of Physics D. 2004 ; 37( 21): 2949-2953.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1088/0022-3727/37/21/002
Vancouver
Oliveira RF, Henriques AB, Lamas TE, Quivy AA, Abramof E. Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields [Internet]. Journal of Physics D. 2004 ; 37( 21): 2949-2953.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1088/0022-3727/37/21/002
Artigo de periodico
Morphological and optical properties of p-type GaAs(001) layers doped with silicon (2003)
Lamas, T. E.; Martini, S; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LAMAS, T. E. et al. Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, v. 34, n. 5-8, p. 701-703, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00106-x. Acesso em: 10 nov. 2024.
APA
Lamas, T. E., Martini, S., Silva, M. J. da, Quivy, A. A., & Leite, J. R. (2003). Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, 34( 5-8), 701-703. doi:10.1016/s0026-2692(03)00106-x
NLM
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Vancouver
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Artigo de periodico
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, M J da et al. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, v. 34, n. 5-8, p. 631-633, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00066-1. Acesso em: 10 nov. 2024.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, 34( 5-8), 631-633. doi:10.1016/s0026-2692(03)00066-1
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Artigo de periodico
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface (2003)
Martini, S; Quivy, A. A.; Lamas, T. E.; Silva, M J da; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S et al. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, v. 251, n. 1-4, p. 101-105, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)02313-8. Acesso em: 10 nov. 2024.
APA
Martini, S., Quivy, A. A., Lamas, T. E., Silva, M. J. da, Silva, E. C. F. da, & Leite, J. R. (2003). Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface. Journal of Crystal Growth, 251( 1-4), 101-105. doi:10.1016/s0022-0248(02)02313-8
NLM
Martini S, Quivy AA, Lamas TE, Silva MJ da, Silva ECF da, Leite JR. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 101-105.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/s0022-0248(02)02313-8
Vancouver
Martini S, Quivy AA, Lamas TE, Silva MJ da, Silva ECF da, Leite JR. Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 101-105.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/s0022-0248(02)02313-8

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