Performance comparison of an OTA using vertical nanowire FET in forward and reverse modes (2025)
- Authors:
- USP affiliated authors: VENUTO, VANESSA CRISTINA PEREIRA DA SILVA - EESC ; MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; RIBEIRO, ARLLEN DOS REIS - EP
- Unidades: EESC; EP
- DOI: 10.1109/SBMicro66945.2025.11197847
- Subjects: TRANSISTORES; CIRCUITOS ANALÓGICOS; SEMICONDUTORES; SISTEMAS ELÉTRICOS
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: IEEE
- Publisher place: Piscataway, N.J.
- Date published: 2025
- Source:
- Título: proceedings
- Conference titles: Symposium on Microelectronics Technology and Devices - SBMicro
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
RIBEIRO, Arllen dos Reis et al. Performance comparison of an OTA using vertical nanowire FET in forward and reverse modes. 2025, Anais.. Piscataway, N.J.: IEEE, 2025. Disponível em: http://dx.doi.org/10.1109/SBMicro66945.2025.11197847. Acesso em: 27 jan. 2026. -
APA
Ribeiro, A. dos R., Silva, V. C. P., Martino, J. A., & Agopian, P. G. D. (2025). Performance comparison of an OTA using vertical nanowire FET in forward and reverse modes. In proceedings. Piscataway, N.J.: IEEE. doi:10.1109/SBMicro66945.2025.11197847 -
NLM
Ribeiro A dos R, Silva VCP, Martino JA, Agopian PGD. Performance comparison of an OTA using vertical nanowire FET in forward and reverse modes [Internet]. proceedings. 2025 ;[citado 2026 jan. 27 ] Available from: http://dx.doi.org/10.1109/SBMicro66945.2025.11197847 -
Vancouver
Ribeiro A dos R, Silva VCP, Martino JA, Agopian PGD. Performance comparison of an OTA using vertical nanowire FET in forward and reverse modes [Internet]. proceedings. 2025 ;[citado 2026 jan. 27 ] Available from: http://dx.doi.org/10.1109/SBMicro66945.2025.11197847 - Temperature influence on analog parameters of vertical nanowire transistors
- Trade-off analysis between gm/ID and fT of nanosheet NMOS transistors with different metal gate stack at high temperature
- Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
- Influence of interface trap density on vertical NW-TFETs with different source composition
- The impact of the temperature on In0.53Ga0.47As nTFETs
- Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
- Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation
- Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
- Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
Informações sobre o DOI: 10.1109/SBMicro66945.2025.11197847 (Fonte: oaDOI API)
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