Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs (2025)
- Authors:
- USP affiliated authors: AGUIAR, VITOR ÂNGELO PAULINO DE - IF ; ADDED, NEMITALA - IF ; MEDINA, NILBERTO HEDER - IF ; ALBERTON, SAULO GABRIEL PEREIRA NASCIMENTO - IF ; PEREIRA, MATHEUS SOUZA - IF
- Unidade: IF
- DOI: 10.1109/TDMR.2025.3572829
- Subjects: FÍSICA DE PARTÍCULAS; NÊUTRONS; DETECÇÃO DE PARTÍCULAS; REAÇÕES NUCLEARES
- Keywords: POWER TRANSISTOR; UMOSFET; TRENCH MOSFET; DMOSFET; RADIATION EFFECTS; SINGLE-EVENT EFFECT; NEUTRONS; NUCLEAR REACTION; CHARGE COLLECTION
- Language: Inglês
- Imprenta:
- Publisher: Institute of Electrical and Electronics Engineers
- Publisher place: Piscataway, NJ
- Date published: 2025
- Source:
- Título: Physical Review D
- Volume/Número/Paginação/Ano: v. 111, 116013 – Published 16 June, 2025
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
ALBERTON, Saulo G et al. Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs. Physical Review D, v. 111, 2025Tradução . . Disponível em: https://doi.org/10.1109/TDMR.2025.3572829. Acesso em: 09 fev. 2026. -
APA
Alberton, S. G., Vilas-Bôas, A. C., Guazzelli, M. A., Aguiar, V. A. P., Pereira, M. S., Added, N., & Medina, N. H. (2025). Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs. Physical Review D, 111. doi:10.1109/TDMR.2025.3572829 -
NLM
Alberton SG, Vilas-Bôas AC, Guazzelli MA, Aguiar VAP, Pereira MS, Added N, Medina NH. Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs [Internet]. Physical Review D. 2025 ; 111[citado 2026 fev. 09 ] Available from: https://doi.org/10.1109/TDMR.2025.3572829 -
Vancouver
Alberton SG, Vilas-Bôas AC, Guazzelli MA, Aguiar VAP, Pereira MS, Added N, Medina NH. Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs [Internet]. Physical Review D. 2025 ; 111[citado 2026 fev. 09 ] Available from: https://doi.org/10.1109/TDMR.2025.3572829 - Neutron-Induced Radiation Effects in UMOS Transistor
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Informações sobre o DOI: 10.1109/TDMR.2025.3572829 (Fonte: oaDOI API)
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