Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism (2015)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; MARTINO, MARCIO DALLA VALLE - EP
- Unidade: EP
- DOI: 10.1016/j.sse.2015.02.006
- Subjects: TRANSISTORES; MICROELETRÔNICA
- Language: Inglês
- Source:
- Título: Solid-State Electronics
- Volume/Número/Paginação/Ano: v. 112, p. 51-55, Oct 2015
- Status:
- Nenhuma versão em acesso aberto identificada
-
ABNT
MARTINO, Márcio Dalla Valle et al. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism. Solid-State Electronics, v. 112, p. 51-55, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2015.02.006. Acesso em: 24 mar. 2026. -
APA
Martino, M. D. V., Thean, A., Claeys, C., Neves, F. S., Agopian, P. G. D., Martino, J. A., et al. (2015). Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism. Solid-State Electronics, 112, 51-55. doi:10.1016/j.sse.2015.02.006 -
NLM
Martino MDV, Thean A, Claeys C, Neves FS, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism [Internet]. Solid-State Electronics. 2015 ; 112 51-55.[citado 2026 mar. 24 ] Available from: https://doi.org/10.1016/j.sse.2015.02.006 -
Vancouver
Martino MDV, Thean A, Claeys C, Neves FS, Agopian PGD, Martino JA, Vandooren A, Rooyackers R, Simoen E. Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism [Internet]. Solid-State Electronics. 2015 ; 112 51-55.[citado 2026 mar. 24 ] Available from: https://doi.org/10.1016/j.sse.2015.02.006 - Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
- Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures
- Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
- Nanowire Tunnel Field Effect Transistors at High Temperature
- Cross-section features influence on surrounding MuGFETs
- Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices
- Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
- Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs
- Threshold voltage extraction in Tunnel FETs
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