Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems (2017)
- Authors:
- USP affiliated authors: OLIVEIRA, LUIZ NUNES DE - IFSC ; SILVA, JUAREZ LOPES FERREIRA DA - IQSC
- Unidades: IFSC; IQSC
- DOI: 10.1088/1361-648X/aa4e8c
- Subjects: ÓPTICA; FÍSICA TEÓRICA
- Keywords: Optical properties; Transparent conducting oxides; In2O3 and SnO2; Density functional theory
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Physics: Condensed Matter
- ISSN: 0953-8984
- Volume/Número/Paginação/Ano: v. 29, n. 8, p. 085501-1-085501-7, Mar. 2017
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SABINO, Fernando P.; OLIVEIRA, Luiz Nunes de; WEI, Su-Huai; SILVA, Juarez Lopes Ferreira da. Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems. Journal of Physics: Condensed Matter, Bristol, v. 29, n. 8, p. 085501-1-085501-7, 2017. Disponível em: < http://dx.doi.org/10.1088/1361-648X/aa4e8c > DOI: 10.1088/1361-648X/aa4e8c. -
APA
Sabino, F. P., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2017). Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems. Journal of Physics: Condensed Matter, 29( 8), 085501-1-085501-7. doi:10.1088/1361-648X/aa4e8c -
NLM
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems [Internet]. Journal of Physics: Condensed Matter. 2017 ; 29( 8): 085501-1-085501-7.Available from: http://dx.doi.org/10.1088/1361-648X/aa4e8c -
Vancouver
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems [Internet]. Journal of Physics: Condensed Matter. 2017 ; 29( 8): 085501-1-085501-7.Available from: http://dx.doi.org/10.1088/1361-648X/aa4e8c - <the> role of the sp-d hybridization in the crystal structure of transparent conduction oxides: the example of the 'AIND.2''OIND.3' (A=Al, Ga, In) oxides
- Roles of the cation atomic radius and s-d hybridization in the stability of the gallia Ga2O3 structure
- Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides
- Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12
- Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections
- Multi-compounds transparent conducting oxides: the example of In2O3-SnO2
- Structural and electronic properties of bulk graphite: a DFT investigation within van der wall corrections
- Origin and tuning of the band gaps in transparent conducting oxides: the example of M2O3 (M = Al, Ga, In)
- First-principles investigation of the adsorption properties of TM clusters on graphene
- Optical and fundamental band gaps disparity of the In2O3 and SnO2 systems revisited
Informações sobre o DOI: 10.1088/1361-648X/aa4e8c (Fonte: oaDOI API)
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