Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides (2014)
- Authors:
- USP affiliated authors: OLIVEIRA, LUIZ NUNES DE - IFSC ; SILVA, JUAREZ LOPES FERREIRA DA - IQSC
- Unidades: IFSC; IQSC
- DOI: 10.1103/PhysRevB.90.155206
- Subjects: NANOPARTÍCULAS; HIBRIDIZAÇÃO; CRISTALOGRAFIA
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2014
- Source:
- Título: Physical Review B
- ISSN: 1098-0121
- Volume/Número/Paginação/Ano: v. 90, n. 15, p. 155206-1-155206-7, Oct. 2014
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SABINO, Fernando Pereira e OLIVEIRA, Luiz Nunes de e SILVA, Juarez Lopes Ferreira da. Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides. Physical Review B, v. 90, n. 15, p. 155206-1-155206-7, 2014Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.90.155206. Acesso em: 27 dez. 2025. -
APA
Sabino, F. P., Oliveira, L. N. de, & Silva, J. L. F. da. (2014). Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides. Physical Review B, 90( 15), 155206-1-155206-7. doi:10.1103/PhysRevB.90.155206 -
NLM
Sabino FP, Oliveira LN de, Silva JLF da. Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides [Internet]. Physical Review B. 2014 ; 90( 15): 155206-1-155206-7.[citado 2025 dez. 27 ] Available from: https://doi.org/10.1103/PhysRevB.90.155206 -
Vancouver
Sabino FP, Oliveira LN de, Silva JLF da. Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides [Internet]. Physical Review B. 2014 ; 90( 15): 155206-1-155206-7.[citado 2025 dez. 27 ] Available from: https://doi.org/10.1103/PhysRevB.90.155206 - Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections
- Multi-compounds transparent conducting oxides: the example of In2O3-SnO2
- First-principles investigation of the adsorption properties of TM clusters on graphene
- Origin and tuning of the band gaps in transparent conducting oxides: the example of M2O3 (M = Al, Ga, In)
- Structural and electronic properties of bulk graphite: a DFT investigation within van der wall corrections
- Optical and fundamental band gaps disparity of the In2O3 and SnO2 systems revisited
- <the> role of the sp-d hybridization in the crystal structure of transparent conduction oxides: the example of the 'AIND.2''OIND.3' (A=Al, Ga, In) oxides
- Roles of the cation atomic radius and s-d hybridization in the stability of the gallia Ga2O3 structure
- Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12
- Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems
Informações sobre o DOI: 10.1103/PhysRevB.90.155206 (Fonte: oaDOI API)
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