Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 (2018)
- Authors:
- USP affiliated authors: OLIVEIRA, LUIZ NUNES DE - IFSC ; SILVA, JUAREZ LOPES FERREIRA DA - IQSC
- Unidades: IFSC; IQSC
- DOI: 10.1063/1.5018056
- Subjects: ÓPTICA; FÍSICA TEÓRICA
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2018
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 123, n. 5, p. 055704-1-055704-9, Feb. 2018
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SABINO, Fernando P. et al. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, v. 123, n. 5, p. 055704-1-055704-9, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018056. Acesso em: 12 fev. 2026. -
APA
Sabino, F. P., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2018). Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, 123( 5), 055704-1-055704-9. doi:10.1063/1.5018056 -
NLM
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2026 fev. 12 ] Available from: https://doi.org/10.1063/1.5018056 -
Vancouver
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2026 fev. 12 ] Available from: https://doi.org/10.1063/1.5018056 - Properties of 'Pt IND.n' n=1-6 on graphene
- <the> role of the sp-d hybridization in the crystal structure of transparent conduction oxides: the example of the 'AIND.2''OIND.3' (A=Al, Ga, In) oxides
- Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections
- Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides
- Multi-compounds transparent conducting oxides: the example of In2O3-SnO2
- Origin and tuning of the band gaps in transparent conducting oxides: the example of M2O3 (M = Al, Ga, In)
- First-principles investigation of the adsorption properties of TM clusters on graphene
- Structural and electronic properties of bulk graphite: a DFT investigation within van der wall corrections
- Why does Ga2O3 crystallize in the gallia structure, while Al2O3 and In2O3 do not?
- Comparative study of van der Waals corrections to the bulk properties of graphite
Informações sobre o DOI: 10.1063/1.5018056 (Fonte: oaDOI API)
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