Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections (2014)
- Authors:
- USP affiliated authors: SILVA, JUAREZ LOPES FERREIRA DA - IQSC ; OLIVEIRA, LUIZ NUNES DE - IFSC
- Unidades: IQSC; IFSC
- Subjects: NANOPARTÍCULAS; FÍSICA TEÓRICA
- Language: Inglês
- Imprenta:
- Publisher: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC
- Publisher place: São Carlos
- Date published: 2014
- ISBN: 9788561958091
- Source:
- Título do periódico: Livro de Resumos
- Conference titles: Semana Integrada do Instituto de Física de São Carlos - SIFSC
-
ABNT
REGO, C. R. C. et al. Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections. 2014, Anais.. São Carlos: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC, 2014. Disponível em: https://repositorio.usp.br/directbitstream/20f19848-eeac-4e32-8d13-0aa26966f4f4/P15406.pdf. Acesso em: 19 abr. 2024. -
APA
Rego, C. R. C., Tereshchuk, P., Silva, J. L. F. da, & Oliveira, L. N. de. (2014). Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections. In Livro de Resumos. São Carlos: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC. Recuperado de https://repositorio.usp.br/directbitstream/20f19848-eeac-4e32-8d13-0aa26966f4f4/P15406.pdf -
NLM
Rego CRC, Tereshchuk P, Silva JLF da, Oliveira LN de. Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections [Internet]. Livro de Resumos. 2014 ;[citado 2024 abr. 19 ] Available from: https://repositorio.usp.br/directbitstream/20f19848-eeac-4e32-8d13-0aa26966f4f4/P15406.pdf -
Vancouver
Rego CRC, Tereshchuk P, Silva JLF da, Oliveira LN de. Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections [Internet]. Livro de Resumos. 2014 ;[citado 2024 abr. 19 ] Available from: https://repositorio.usp.br/directbitstream/20f19848-eeac-4e32-8d13-0aa26966f4f4/P15406.pdf - <the> role of the sp-d hybridization in the crystal structure of transparent conduction oxides: the example of the 'AIND.2''OIND.3' (A=Al, Ga, In) oxides
- Roles of the cation atomic radius and s-d hybridization in the stability of the gallia Ga2O3 structure
- Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12
- Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides
- Properties of 'Pt IND.n' n=1-6 on graphene
- Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In)
- Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al, Ga, In)
- Graphene-supported small transition-metal clusters: a density functional theory investigation within van der Waals corrections
- Comparative study of van der Waals corrections to the bulk properties of graphite
- Why does Ga2O3 crystallize in the gallia structure, while Al2O3 and In2O3 do not?
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