Why does Ga2O3 crystallize in the gallia structure, while Al2O3 and In2O3 do not? (2015)
- Authors:
- USP affiliated authors: OLIVEIRA, LUIZ NUNES DE - IFSC ; SILVA, JUAREZ LOPES FERREIRA DA - IQSC
- Unidades: IFSC; IQSC
- Subjects: NANOPARTÍCULAS; FÍSICA TEÓRICA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Física - SBF
- Publisher place: São Paulo
- Date published: 2015
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
SABINO, Fernando P. e OLIVEIRA, Luiz Nunes de e SILVA, Juarez Lopes Ferreira da. Why does Ga2O3 crystallize in the gallia structure, while Al2O3 and In2O3 do not? 2015, Anais.. São Paulo: Sociedade Brasileira de Física - SBF, 2015. Disponível em: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R1067-1.pdf. Acesso em: 10 fev. 2026. -
APA
Sabino, F. P., Oliveira, L. N. de, & Silva, J. L. F. da. (2015). Why does Ga2O3 crystallize in the gallia structure, while Al2O3 and In2O3 do not? In Resumos. São Paulo: Sociedade Brasileira de Física - SBF. Recuperado de http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R1067-1.pdf -
NLM
Sabino FP, Oliveira LN de, Silva JLF da. Why does Ga2O3 crystallize in the gallia structure, while Al2O3 and In2O3 do not? [Internet]. Resumos. 2015 ;[citado 2026 fev. 10 ] Available from: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R1067-1.pdf -
Vancouver
Sabino FP, Oliveira LN de, Silva JLF da. Why does Ga2O3 crystallize in the gallia structure, while Al2O3 and In2O3 do not? [Internet]. Resumos. 2015 ;[citado 2026 fev. 10 ] Available from: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R1067-1.pdf - Properties of 'Pt IND.n' n=1-6 on graphene
- <the> role of the sp-d hybridization in the crystal structure of transparent conduction oxides: the example of the 'AIND.2''OIND.3' (A=Al, Ga, In) oxides
- Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12
- Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections
- Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides
- Multi-compounds transparent conducting oxides: the example of In2O3-SnO2
- Origin and tuning of the band gaps in transparent conducting oxides: the example of M2O3 (M = Al, Ga, In)
- First-principles investigation of the adsorption properties of TM clusters on graphene
- Structural and electronic properties of bulk graphite: a DFT investigation within van der wall corrections
- Comparative study of van der Waals corrections to the bulk properties of graphite
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