Comparative study of van der Waals corrections to the bulk properties of graphite (2015)
- Authors:
- USP affiliated authors: OLIVEIRA, LUIZ NUNES DE - IFSC ; SILVA, JUAREZ LOPES FERREIRA DA - IQSC
- Unidades: IFSC; IQSC
- DOI: 10.1088/0953-8984/27/41/415502
- Subjects: CARBONO; LIGAÇÕES QUÍMICAS
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Physics: Condensed Matter
- ISSN: 0953-8984
- Volume/Número/Paginação/Ano: v. 27, n. 41, p. 415502-1-415502-10, Oct. 2015
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
RÊGO, Celso R. C. et al. Comparative study of van der Waals corrections to the bulk properties of graphite. Journal of Physics: Condensed Matter, v. 27, n. 41, p. 415502-1-415502-10, 2015Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/27/41/415502. Acesso em: 10 fev. 2026. -
APA
Rêgo, C. R. C., Oliveira, L. N. de, Tereshchuk, P., & Silva, J. L. F. da. (2015). Comparative study of van der Waals corrections to the bulk properties of graphite. Journal of Physics: Condensed Matter, 27( 41), 415502-1-415502-10. doi:10.1088/0953-8984/27/41/415502 -
NLM
Rêgo CRC, Oliveira LN de, Tereshchuk P, Silva JLF da. Comparative study of van der Waals corrections to the bulk properties of graphite [Internet]. Journal of Physics: Condensed Matter. 2015 ; 27( 41): 415502-1-415502-10.[citado 2026 fev. 10 ] Available from: https://doi.org/10.1088/0953-8984/27/41/415502 -
Vancouver
Rêgo CRC, Oliveira LN de, Tereshchuk P, Silva JLF da. Comparative study of van der Waals corrections to the bulk properties of graphite [Internet]. Journal of Physics: Condensed Matter. 2015 ; 27( 41): 415502-1-415502-10.[citado 2026 fev. 10 ] Available from: https://doi.org/10.1088/0953-8984/27/41/415502 - Properties of 'Pt IND.n' n=1-6 on graphene
- <the> role of the sp-d hybridization in the crystal structure of transparent conduction oxides: the example of the 'AIND.2''OIND.3' (A=Al, Ga, In) oxides
- Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12
- Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections
- Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides
- Multi-compounds transparent conducting oxides: the example of In2O3-SnO2
- Origin and tuning of the band gaps in transparent conducting oxides: the example of M2O3 (M = Al, Ga, In)
- First-principles investigation of the adsorption properties of TM clusters on graphene
- Structural and electronic properties of bulk graphite: a DFT investigation within van der wall corrections
- Why does Ga2O3 crystallize in the gallia structure, while Al2O3 and In2O3 do not?
Informações sobre o DOI: 10.1088/0953-8984/27/41/415502 (Fonte: oaDOI API)
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